公开(公告)号：WO2017091295A1

公开(公告)日：2017-06-01

申请号：PCT/US2016/054448

申请日：2016-09-29

Applicant: INTEL CORPORATION

Inventor： PAN, Feng ,  GHODSI, Ramin

IPC: G11C16/26 ,  G11C16/10 ,  G11C16/34

CPC classification number: G11C16/10 ,  G11C7/04 ,  G11C7/065 ,  G11C7/1072 ,  G11C7/22 ,  G11C11/5628 ,  G11C11/5642 ,  G11C16/08 ,  G11C16/26 ,  G11C16/28 ,  G11C16/32 ,  G11C16/3454 ,  G11C16/3459 ,  G11C16/349 ,  G11C2211/5644

Abstract: A disclosed example sense programmed states of memory cells includes starting a counter at a time of activating a plurality of memory cells. Binary values are obtained based on sense amplifiers in circuit with the memory cells in response to the counter reaching a trigger count value. A programmed state of the memory cells is determined based on the binary values.

Abstract translation: 所公开的实例感测存储器单元的编程状态包括在激活多个存储器单元时启动计数器。 响应于计数器达到触发计数值，基于存储器单元的电路中的读出放大器获得二进制值。 存储器单元的编程状态根据二进制值确定。