SEMICONDUCTOR PACKAGE INCLUDING A MODULAR SIDE RADIATING WAVEGUIDE LAUNCHER
    1.
    发明申请
    SEMICONDUCTOR PACKAGE INCLUDING A MODULAR SIDE RADIATING WAVEGUIDE LAUNCHER 审中-公开
    半导体封装,包括模块化边辐射波导发射器

    公开(公告)号:WO2018057006A1

    公开(公告)日:2018-03-29

    申请号:PCT/US2016/053491

    申请日:2016-09-23

    申请人: INTEL CORPORATION

    IPC分类号: H01P5/107 H01P3/00 H01L23/66

    摘要: Integration of a side-radiating waveguide launcher system into a semiconductor package beneficially permits the coupling of a waveguide directly to the semiconductor package. Included are a first conductive member and a second conductive member separated by a dielectric material. Also included is a conductive structure, such as a plurality of vias, that conductively couples the first conductive member and the second conductive member. Together, the first conductive member, the second conductive member, and the conductive structure form an electrically conductive side-radiating waveguide launcher enclosing shaped space within the dielectric material. The shaped space includes a narrow first end and a wide second end. An RF excitation element is disposed proximate the first end and a waveguide may be operably coupled proximate the second end of the shaped space.

    摘要翻译: 侧辐射波导发射器系统集成到半导体封装中有利地允许波导直接耦合到半导体封装。 包括由电介质材料分开的第一导电构件和第二导电构件。 还包括导电结构,诸如多个通孔,其导电地耦合第一导电构件和第二导电构件。 第一导电构件,第二导电构件和导电结构一起形成封闭电介质材料内的成形空间的导电侧向辐射波导发射器。 成形空间包括窄的第一端和宽的第二端。 RF激励元件设置在第一端附近,并且波导可以可操作地耦合到成形空间的第二端附近。

    MMWAVE DIELECTRIC WAVEGUIDE INTERCONNECT TOPOLOGY FOR AUTOMOTIVE APPLICATIONS

    公开(公告)号:WO2019009874A1

    公开(公告)日:2019-01-10

    申请号:PCT/US2017/040553

    申请日:2017-07-01

    申请人: INTEL CORPORATION

    IPC分类号: H05K5/00 H01L23/58 B60R16/02

    摘要: Embodiments of the invention include autonomous vehicles and mm-wave systems for communication between components. In an embodiment the vehicle includes an electronic control unit (ECU). The ECU may include a printed circuit board (PCB) and a CPU die packaged on a CPU packaging substrate. In an embodiment, the CPU packaging substrate is electrically coupled to the PCB. The ECU may also include an external predefined interface electrically coupled to the CPU die. In an embodiment, an active mm-wave interconnect may include a dielectric waveguide, and a first connector coupled to a first end of the dielectric waveguide. In an embodiment, the first connector comprises a first mm-wave engine, and the first connector is electrically coupled to the external predefined interface. Embodiments may also include a second connector coupled to a second end of the dielectric waveguide, wherein the second connector comprises a second mm-wave engine.

    WAVEGUIDES WITH ACTIVE OR PASSIVE REPEATERS FOR RANGE EXTENSION

    公开(公告)号:WO2018125228A1

    公开(公告)日:2018-07-05

    申请号:PCT/US2016/069543

    申请日:2016-12-30

    申请人: INTEL CORPORATION

    IPC分类号: H01P3/16 H01P3/12 H01P3/08

    摘要: Embodiments of the invention may include a mm-wave waveguide. In an embodiment, the mm-wave waveguide may include a first dielectric waveguide and a second dielectric waveguide. A conductive layer may be used to cover the first dielectric waveguide and the second dielectric waveguide in some embodiments. Furthermore, embodiments may include a repeater communicatively coupled between the first dielectric waveguide and the second dielectric waveguide. In an embodiment, the repeater may be an active repeater or a passive repeater. According to an embodiment, a passive repeater may be integrated within the dielectric waveguide. The passive repeater may include a dispersion compensating material that produces a dispersion response in a signal that is substantially opposite to a dispersion response produced when the signal is propagated along the dielectric waveguide.

    PLUGGABLE MM-WAVE MODULE FOR RACK SCALE ARCHITECTURE (RSA) SERVERS AND HIGH PERFORMANCE COMPUTERS (HPCS)

    公开(公告)号:WO2018128617A1

    公开(公告)日:2018-07-12

    申请号:PCT/US2017/012367

    申请日:2017-01-05

    申请人: INTEL CORPORATION

    IPC分类号: H01P5/08 H01P3/16 G06F15/16

    摘要: Embodiments of the invention include an active mm-wave interconnect. In an embodiment, the active mm-wave interconnect includes a dielectric waveguide that is coupled to a first connector and a second connector. According to an embodiment, each of the first and second connectors may include a mm-wave engine. In an embodiment, the mm-wave engines may include a power management die, a modulator die, a demodulator die, a mm-wave transmitter die, and a mm-wave receiver die. Additional embodiments may include connectors that interface with predefined interfaces, such as small form-factor pluggables (SFP), quad small form-factor pluggables (QSFP), or octal small form-factor pluggables (OSFP). Accordingly, embodiments of the invention allow for plug and play functionality with existing servers and other high performance computing systems.

    MULTIPLEXER AND COMBINER STRUCTURES EMBEDDED IN A MMWAVE CONNECTOR INTERFACE

    公开(公告)号:WO2018128615A1

    公开(公告)日:2018-07-12

    申请号:PCT/US2017/012364

    申请日:2017-01-05

    申请人: INTEL CORPORATION

    IPC分类号: H01P5/18 H01P1/207 H01P5/103

    摘要: Embodiments of the invention include a mm-wave waveguide connector and methods of forming such devices. In an embodiment the mm-wave waveguide connector may include a plurality of mm-wave launcher portions, and a plurality of ridge based mm-wave filter portions each communicatively coupled to one of the mm-wave launcher portions. In an embodiment, the ridge based mm-wave filter portions each include a plurality of protrusions that define one or more resonant cavities. Additional embodiments may include a multiplexer portion communicatively coupled to the plurality of ridge based mm-wave filter portions and communicative coupled to a mm-wave waveguide bundle. In an embodiment the plurality of protrusions define resonant cavities with openings between 0.5 mm and 2.0 mm, the plurality of protrusions are spaced apart from each other by a spacing between 0.5 mm and 2.0 mm, and wherein the plurality of protrusions have a thickness between 200 µm and 1,000 µm

    WAVEGUIDE DESIGN TECHNIQUES TO ENHANCE CHANNEL CHARACTERISTICS

    公开(公告)号:WO2018125227A1

    公开(公告)日:2018-07-05

    申请号:PCT/US2016/069540

    申请日:2016-12-30

    申请人: INTEL CORPORATION

    IPC分类号: H01P3/16 H01P3/12 H01P5/107

    摘要: Embodiments of the invention include a dispersion reduced dielectric waveguide and methods of forming such devices. In an embodiment, the dispersion reduced dielectric waveguide may include a first dielectric material that has a first Dk-value, and a second dielectric material that has a second Dk-value that is greater than the first Dk-value. In an embodiment, the dispersion reduced dielectric waveguide may also include a conductive layer formed around the first and second dielectric materials. According to an embodiment, a first portion of a bandwidth of a signal that is propagated along the dispersion reduced dielectric waveguide is primarily propagated along the first dielectric material, and a second portion of a bandwidth of the signal that is propagated along the dispersion reduced dielectric waveguide is primarily propagated along the second dielectric material.