Abstract:
Disclosed herein are microelectronic assemblies including microelectronic components coupled by direct bonding, and related structures and techniques. In some embodiments, a microelectronic assembly may include a first microelectronic component including a first guard ring extending through at least a portion of a thickness of and along a perimeter; a second microelectronic component including a second guard ring extending through at least a portion of a thickness of and along a perimeter, where the first and second microelectronic components are coupled by direct bonding; and a seal ring formed by coupling the first guard ring to the second guard ring. In some embodiments, a microelectronic assembly may include a microelectronic component coupled to an interposer that includes a first liner material at a first surface; a second liner material at an opposing second surface; and a perimeter wall through the interposer and connected to the first and second liner materials.
Abstract:
Gallium nitride (GaN) three-dimensional integrated circuit technology is described. In an example, an integrated circuit structure includes a layer including gallium and nitrogen, a plurality of gate structures over the layer including gallium and nitrogen, a source region on a first side of the plurality of gate structures, a drain region on a second side of the plurality of gate structures, the second side opposite the first side, and a drain field plate above the drain region wherein the drain field plate is coupled to the source region. In another example, a semiconductor package includes a package substrate. A first integrated circuit (IC) die is coupled to the package substrate. The first IC die includes a GaN device layer and a Si-based CMOS layer.
Abstract:
Disclosed herein are various designs for dielectric waveguides, as well as methods of manufacturing such waveguides. One type of dielectric waveguides described herein includes waveguides with one or more cavities in the dielectric waveguide material. Another type of dielectric waveguides described herein includes waveguides with a conductive ridge in the dielectric waveguide material. Dielectric waveguides described herein may be dispersion reduced dielectric waveguides, compared to conventional dielectric waveguides, and may be designed to adjust the difference in the group delay between the lower frequencies and the higher frequencies of a chosen bandwidth.
Abstract:
Microelectronic assemblies, and related devices and methods, are disclosed herein. For example, in some embodiments, a microelectronic assembly may include a package substrate having a first surface and an opposing second surface, and a die secured to the package substrate, wherein the die has a first surface and an opposing second surface, the die has first conductive contacts at the first surface and second conductive contacts at the second surface, and the first conductive contacts are coupled to conductive pathways in the package substrate by first non-solder interconnects.
Abstract:
Microelectronic assemblies, and related devices and methods, are disclosed herein. For example, in some embodiments, a microelectronic assembly may include a package substrate, a first die coupled to the package substrate with first interconnects, and a second die coupled to the first die with second interconnects, wherein the second die is coupled to the package substrate with third interconnects, a communication network is at least partially included in the first die and at least partially included in the second die, and the communication network includes a communication pathway between the first die and the second die.
Abstract:
Microelectronic assemblies, and related devices and methods, are disclosed herein. For example, in some embodiments, a microelectronic assembly may a die having a front side and a back side, the die comprising a first material and conductive contacts at the front side; and a thermal layer attached to the back side of the die, the thermal layer comprising a second material and a conductive pathway, wherein the conductive pathway extends from a front side of the thermal layer to a back side of the thermal layer.
Abstract:
Hybrid filters and more particularly filters having acoustic wave resonators (AWRs) and lumped component (LC) resonators and packages therefor are described. In an example, a packaged filter incudes a package substrate, the package substrate having a first side and a second side, the second side opposite the first side. A first acoustic wave resonator (AWR) device is coupled to the package substrate, the first AWR device comprising a resonator. A plurality of inductors is in the package substrate.
Abstract:
One superconducting qubit device package disclosed herein includes a die having a first face and an opposing second face, and a package substrate having a first face and an opposing second face. The die includes a quantum device including a plurality of superconducting qubits and a plurality of resonators on the first face of the die, and a plurality of conductive pathways coupled between conductive contacts at the first face of the die and associated ones of the plurality of superconducting qubits or of the plurality of resonators. The second face of the package substrate also includes conductive contacts. The device package further includes first level interconnects disposed between the first face of the die and the second face of the package substrate, coupling the conductive contacts at the first face of the die with associated conductive contacts at the second face of the package substrate.
Abstract:
A system can include a first portion of a fabric fastener, a second portion of the fabric fastener, wherein the first portion and the second portion are configured to mechanically connect with each other and to resist separation from each other once connected, and wherein the first and second portions include a plurality of corresponding electrical contacts configured to form a plurality of individual electrical connections when the first portion is mechanically connected with the second portion.
Abstract:
In accordance with disclosed embodiments, there are provided systems, methods, and apparatuses for implementing increased human perception of haptic feedback systems. For instance, there is disclosed in accordance with one embodiment there is wearable device, having therein: a wearable device case; a plurality of actuators within the wearable device case, each of which to vibrate independently or in combination; in which one surface of each of the plurality of actuators is exposed at a surface of the wearable device case; an elastomer surrounding the sides of each of the plurality of actuators within the wearable device case to hold the actuators in position within the wearable device case; and electrical interconnects from each of the plurality of actuators to internal semiconductor components of the wearable device. Other related embodiments are disclosed.