公开(公告)号：WO2015094488A1

公开(公告)日：2015-06-25

申请号：PCT/US2014/063128

申请日：2014-10-30

Applicant: INTEL CORPORATION

Inventor： BRISTOL, Robert L. ,  BLACKWELL, James M. ,  MYERS, Alan M. ,  SINGH, Kanwal J.

IPC: H01L21/768 ,  H01L21/60

CPC classification number: H01L21/0338 ,  H01L21/0332 ,  H01L21/0335 ,  H01L21/0337 ,  H01L21/31144 ,  H01L21/76801 ,  H01L21/76808 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/76816 ,  H01L21/76897 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Self-aligned via patterning with multi-colored photobuckets for back end of line (BEOL) interconnects is described. In an example, an interconnect structure for an integrated circuit includes a first layer of the interconnect structure disposed above a substrate. A second layer of the interconnect structure is disposed above the first layer of the interconnect structure. Dielectric lines of the second grating overlap and contact, but are distinct from, dielectric lines of the first grating. First and second dielectric regions are disposed between the metal lines of the first grating and the metal lines of the second grating, and in a same plane as upper portions of the dielectric lines of the first grating and lower portions of the dielectric lines of the second grating. The first dielectric region is composed of a first cross-linked photolyzable material, and the second dielectric region is composed of a second, different, cross-linked photolyzable material.

Abstract translation: 描述了通过用于后端（BEOL）互连的多色photobuckets图案化的自对准。 在一个示例中，用于集成电路的互连结构包括设置在基板上方的互连结构的第一层。 互连结构的第二层设置在互连结构的第一层之上。 第二光栅的介电线与第一光栅的介质线重叠和接触，但不同。 第一和第二电介质区域设置在第一光栅的金属线和第二光栅的金属线之间，并且在与第一光栅的介质线的上部和第二栅的介电线的下部相同的平面中 光栅。 第一电介质区域由第一交联光可光化材料组成，第二电介质区域由第二不同的交联光可光化材料组成。