DETECTION SYSTEM FOR TUNABLE/REPLACEABLE EDGE COUPLING RING

    公开(公告)号:WO2018222430A2

    公开(公告)日:2018-12-06

    申请号:PCT/US2018/033656

    申请日:2018-05-21

    CPC classification number: H01J37/32935 H01J37/32642 H01L21/68735

    Abstract: A substrate processing system includes a processing chamber. A pedestal is arranged in the processing chamber. An edge coupling ring is arranged adjacent to the pedestal and around a radially outer edge of the substrate. An actuator is configured to selectively move the edge coupling ring relative to the substrate to alter an edge coupling profile of the edge coupling ring. The substrate processing system includes a camera-based detection system that instructs the actuator to adjust a position of the edge coupling ring. The camera is configured to communicate with the controller, and the controller adjusts a position and/or focus of the camera. In response to edge coupling ring condition information from the camera, the controller operates the actuator to move the edge coupling ring vertically. In response to edge coupling ring position information from the camera, the controller operates the actuator to move the edge coupling ring horizontally.

    SYSTEMS AND METHODS FOR TUNING TO REDUCE REFLECTED POWER IN MULTIPLE STATES

    公开(公告)号:WO2018156486A1

    公开(公告)日:2018-08-30

    申请号:PCT/US2018/018720

    申请日:2018-02-20

    Abstract: Systems and methods for tuning to reduce reflected power in multiple states are described. The methods include determining values of one or more parameters of an impedance matching circuit so that reflected power is reduced for multiple states. Such a reduction in the reflected power increases a life of a radio frequency generator coupled to the impedance matching circuit while simultaneously processing a substrate using the multiple states.

    SELECTIVE SILICON DIOXIDE REMOVAL USING LOW PRESSURE LOW BIAS DEUTERIUM PLASMA

    公开(公告)号:WO2020186087A1

    公开(公告)日:2020-09-17

    申请号:PCT/US2020/022445

    申请日:2020-03-12

    Abstract: A method is provided, including the following method operations: generating a deuterium plasma, the deuterium plasma including a plurality of energetic deuterium atoms; and directing one or more of the plurality of energetic deuterium atoms to a surface of a substrate, the surface of the substrate having a region of silicon dioxide, the region of silicon dioxide having an underlying silicon layer; wherein the one or more of the plurality of energetic deuterium atoms selectively etch the region of silicon oxide, to the exclusion of the underlying silicon layer.

    DIRECT DRIVE RF CIRCUIT FOR SUBSTRATE PROCESSING SYSTEMS

    公开(公告)号:WO2019240931A1

    公开(公告)日:2019-12-19

    申请号:PCT/US2019/033776

    申请日:2019-05-23

    Abstract: A direct drive circuit for providing RF power to a component of a substrate processing system includes a clock generator to generate a clock signal at a first frequency, a gate driver to receive the clock signal and a half bridge circuit. The half bridge circuit includes a first switch with a control terminal connected to the gate driver, a first terminal and a second terminal; a second switch with a control terminal connected to the gate driver, a first terminal connected to the second terminal of the first switch and an output node, and a second terminal; a first DC supply to supply a first voltage potential to the first terminal of the first switch; and a second DC supply to supply a second voltage potential to the second terminal of the second switch. The first voltage potential and the second voltage potential have opposite polarity and are approximately equal in magnitude.

    MULTI-ZONE COOLING OF PLASMA HEATED WINDOW
    5.
    发明申请

    公开(公告)号:WO2019099313A1

    公开(公告)日:2019-05-23

    申请号:PCT/US2018/060240

    申请日:2018-11-12

    Abstract: A substrate processing system includes a multi-zone cooling apparatus to provide cooling for all or substantially all of a window in a substrate processing chamber. In one aspect, the apparatus includes one or more plenums to cover all or substantially all of a window in a substrate processing chamber, including under an energy source for transformer coupled plasma in the substrate processing chamber. One or more air amplifiers and accompanying conduits provide air to the one or more plenums to provide air flow to the window. The conduits are connected to plenum inlets at various distances from the center, to direct airflow throughout the window and thus address center hot, middle hot, and edge hot conditions, depending on the processes being carried out in the chamber. In one aspect, the one or more plenums include a central air inlet, to direct air toward the center portion of the window, to address center hot conditions.

    DETECTION SYSTEM FOR TUNABLE/REPLACEABLE EDGE COUPLING RING

    公开(公告)号:WO2018222430A3

    公开(公告)日:2018-12-06

    申请号:PCT/US2018/033656

    申请日:2018-05-21

    Abstract: A substrate processing system includes a processing chamber. A pedestal is arranged in the processing chamber. An edge coupling ring is arranged adjacent to the pedestal and around a radially outer edge of the substrate. An actuator is configured to selectively move the edge coupling ring relative to the substrate to alter an edge coupling profile of the edge coupling ring. The substrate processing system includes a camera-based detection system that instructs the actuator to adjust a position of the edge coupling ring. The camera is configured to communicate with the controller, and the controller adjusts a position and/or focus of the camera. In response to edge coupling ring condition information from the camera, the controller operates the actuator to move the edge coupling ring vertically. In response to edge coupling ring position information from the camera, the controller operates the actuator to move the edge coupling ring horizontally.

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