公开(公告)号：WO2021146098A1

公开(公告)日：2021-07-22

申请号：PCT/US2021/012593

申请日：2021-01-08

Applicant: LAM RESEARCH CORPORATION

Inventor： SAMULON, Eric ,  EHRLICH, Darrell

IPC: H01L21/687 ,  H02N13/00 ,  H01L21/683 ,  C23C16/458

Abstract: A baseplate of a substrate support assembly for supporting a semiconductor substrate in a processing chamber comprises a first component made of a first material including a metal and a nonmetal. The first material has a first coefficient of thermal expansion. A layer coating the first component is made of a second material. The second material has a second coefficient of thermal expansion. The first and second coefficients of thermal expansion are different.

公开(公告)号：WO2022046643A1

公开(公告)日：2022-03-03

申请号：PCT/US2021/047164

申请日：2021-08-23

Applicant: LAM RESEARCH CORPORATION

Inventor： DAS, Debanjan ,  SAMULON, Eric ,  EHRLICH, Darrell

IPC: H01L21/683 ,  H01L21/687 ,  H01L21/67 ,  H01J37/32

Abstract: A component of a semiconductor processing chamber formed of a metal matrix component having an anodized layer on a surface thereof. The anodized layer comprises an aluminum oxide layer and is formed over an AlSic component. The anodized layer provides the component with protection against corrosion due to plasma processing gases, as the anodized layer provides a protective coating. A layer of aluminum is plated over a surface of the component and the aluminum layer is subsequently anodized to form the protective layer.

公开(公告)号：WO2022108900A1

公开(公告)日：2022-05-27

申请号：PCT/US2021/059455

申请日：2021-11-16

Applicant: LAM RESEARCH CORPORATION

Inventor： SMITH, Jeremy George ,  MATYUSHKIN, Alexander ,  SAMULON, Eric ,  COMENDANT, Keith ,  YU, Yixuan

IPC: H01L21/683 ,  H01L21/687 ,  C23C16/458 ,  H01J37/32

Abstract: A substrate support for a substrate processing system includes a baseplate and a spray coat layer arranged on the baseplate. The spray coat layer has a first thickness and a first thermal conductivity. A bond layer is arranged on the spray coat layer. The bond layer has a second thickness and a second thermal conductivity. A ceramic layer is arranged on the bond layer. At least one of the first thickness and the second thickness varies in at least one of a radial direction and an azimuthal direction such that a third thermal conductivity between the ceramic layer and the baseplate varies in the at least one of the radial direction and the azimuthal direction.

公开(公告)号：WO2021168027A1

公开(公告)日：2021-08-26

申请号：PCT/US2021/018445

申请日：2021-02-18

Applicant: LAM RESEARCH CORPORATION

Inventor： WANG, Feng ,  MATYUSHKIN, Alexander ,  EHRLICH, Darrell ,  SAMULON, Eric

IPC: H01J37/32

Abstract: A baseplate for a substrate support in a substrate processing system includes at least one coolant channel formed within the baseplate. The at least one coolant channel defines a volume within the baseplate configured to retain a coolant and follows a path configured to distribute the coolant in the volume throughout the baseplate. At least one fin is provided within the at least one coolant channel. The at least one fin extends from at least one of a top, a bottom, and a sidewall of the at least one coolant channel into the volume to increase a surface area of the at least one coolant channel.

公开(公告)号：WO2021154754A1

公开(公告)日：2021-08-05

申请号：PCT/US2021/015128

申请日：2021-01-26

Applicant: LAM RESEARCH CORPORATION

Inventor： SAROBOL, Pylin ,  SAMULON, Eric ,  HAZARIKA, Pankaj ,  SMITH, Dennis ,  KERN, Kurt ,  DAS, Debanjan ,  EHRLICH, Darrell ,  PAPE, Eric A. ,  SCHICK, Matthew Brian

IPC: H01L21/67 ,  H01J37/32 ,  H01L21/687 ,  B23K26/26

Abstract: A component for use inside a semiconductor chamber with a laser textured surface facing a vacuum region inside the semiconductor chamber is provided.

公开(公告)号：WO2020092412A1

公开(公告)日：2020-05-07

申请号：PCT/US2019/058626

申请日：2019-10-29

Applicant: LAM RESEARCH CORPORATION

Inventor： MATYUSHKIN, Alexander ,  COMENDANT, Keith ,  EHRLICH, Darrell ,  SAMULON, Eric

IPC: H01J37/32 ,  H01L21/683 ,  H01L21/67

Abstract: A spark suppression apparatus for a helium line in an electrostatic chuck in a plasma processing chamber is provided. The spark suppression apparatus comprises a dielectric multilumen plug in the helium line, wherein the dielectric multilumen plug has a plurality of lumens, wherein the plurality of lumens are numbered between 30 to 100,000 lumens and have a width of between 1 micron and 200 microns.