BYPASS CAPACITORS FOR HIGH VOLTAGE BIAS POWER IN THE MID FREQUENCY RF RANGE
    3.
    发明申请
    BYPASS CAPACITORS FOR HIGH VOLTAGE BIAS POWER IN THE MID FREQUENCY RF RANGE 审中-公开
    用于高频偏置功率的旁路电容器在RF频率范围内

    公开(公告)号:WO2013078465A1

    公开(公告)日:2013-05-30

    申请号:PCT/US2012/066467

    申请日:2012-11-23

    Inventor: SATO, Arthur

    Abstract: A system for decoupling arcing RF signals in a plasma chamber including a top electrode, an electrostatic chuck for supporting a semiconductor wafer, and a capacitor coupled between the at least one of a plurality of clamping electrodes in the surface of the electrostatic chuck and a baseplate of the electrostatic chuck, the capacitor having a capacitance of greater than about 19 nanofarads, the capacitor disposed within an interior volume of the electrostatic chuck. A method of decoupling arcing RF signals in a plasma chamber is also disclosed.

    Abstract translation: 一种用于在包括顶部电极,用于支撑半导体晶片的静电卡盘和耦合在静电卡盘的表面中的多个夹紧电极中的至少一个夹持电极之间的电容器的等离子体室中去耦电弧RF信号的系统和基板 的电容器具有大于约19纳法的电容,电容器设置在静电卡盘的内部容积内。 还公开了一种在等离子体室中去耦电弧RF信号的方法。

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