Abstract:
The present invention relates to a composite for manufacturing a fiber-reinforced polymer composite for a strength member of an overhead electric cable and a method for manufacturing a fiber-reinforced polymer composite for a strength member of an overhead electric cable using the same. The composite for manufacturing a fiber-reinforced polymer composite for a strength member of an overhead electric cable, provided in the present invention, comprises a thermosetting resin of an epoxy-based resin; a liquid curing agent of an acid anhydride-based or an amine-based compound; an accelerating agent of an imidazole-based compound or a boron- trifluoride ethylamine-based compound; a release agent of zinc stearate; and a filler of a nanoclay or a short glass fiber.
Abstract:
Disclosed is a fiber reinforced plastic wire used as the overhead transmission cable. The fiber reinforced plastic wire for a strength member of an overhead transmission cable according to the present invention includes a wire having a predetermined diameter and composed of thermoset matrix resin; and a plurality of high strength fibers dispersed parallel to a longitudinal direction in an inside of the wire, the high strength fibers being surface-treated with a coupling agent to improve interfacial adhesion to the matrix resin. The fiber reinforced plastic wire of the present invention has the high tensile strength at the room temperature and the high temperature since its high strength fiber is surface-treated with a coupling agent. The fiber reinforced plastic wire can be also effectively used as the strength member in the overhead transmission cable since it has the excellent low coefficient of thermal expansion, etc. and is light-weight.
Abstract:
In an apparatus for treating substrates, a primary process chamber, a peripheral etching chamber and a rear etching chamber are arranged around a transfer chamber, and a primary process, a peripheral etching process and a rear etching process are performed under a vacuum state in a single system. The peripheral and the rear etching processes are performed in the same space without atmospheric exposure of the substrate. Accordingly, the process time of the primary process, the peripheral and the rear etching processes may be remarkably reduced, to thereby improve the manufacturing efficiency of a semiconductor device.
Abstract:
An apparatus for etching an unwanted layer formed on a back surface of a substrate includes a chamber providing a space to process the substrate, a support member supporting an edge portion of a back surface of the substrate, and a gas supply including a body supplying an etching gas onto the back surface of the substrate through a plurality of holes and a gas supply conduit connected with the holes. High frequency energy is applied to the gas supply to generate a plasma from the etching gas, and the unwanted layer may be removed by the plasma.
Abstract:
A device of driving a liquid crystal display including a plurality of pixels connected to gate lines and data lines and arranged in a matrix is provided. The driving device includes: a gray voltage generator generating a plurality of gray voltages; an image signal modifier receiving first image signals for a pixel row and second image signals for a next pixel row, selecting modified image signal depending on the first image signals and the second image signals, and outputting the modified image signals; and a data driver selecting data voltages from the gray voltages based on the modified image signals from the image signal modifier and applying the data voltages to the pixels.
Abstract:
Disclosed is an adjuvant for controlling polishing selectivity when polishing a cationically charged material simultaneously with an anionically charged material. CMP slurry comprising the adjuvant is also disclosed. The adjuvant comprises: (a) a polyelectrolyte that forms an adsorption layer on the cationically charged material in order to increase the polishing selectivity of the anionically charged material; (b) a basic material; and (c) a fluorine-based compound. when the adjuvant for controlling polishing selectivity of CMP slurry according to the present invention is applied to a CMP process, it is possible to increase the polishing selectivity of a silicon oxide layer, to obtain a uniform particle size of CMP slurry, to stabilize variations in viscosity under an external force and to minimize generation of microscratches during a polishing process. Therefore, the adjuvant for CMP slurry according to the present invention can improve reliability and productivity during the fabrication of very large scale integrated semiconductors.