Abstract:
An integrated circuit which enables lower cost yet provides superior performance compared to standard silicon integrated circuits by utilizing thin film transistors (TFTs) fabricated in BEOL. Improved memory circuits are enabled by utilizing TFTs to improve density and access in a three dimensional circuit design which minimizes die area. Improved I/O is enabled by eliminating the area on the surface of the semiconductor dedicated to I/O and allowing many times the number of I/O available. Improved speed and lower power are also enabled by the shortened metal routing lines and reducing leakage.
Abstract:
A projection system. The system includes a first polarizer (102); and an electro-optical light scattering medium (103) disposed in a transmissive path between the first polarizer and a light source (108, 109, 110). A plane of polarization of the first polarizer is substantially parallel to a plane of polarization of the light source. The light scattering medium is switchable from a first state to a second state in response to an applied electrical field. The electro-optical light scattering medium in the first state forms a bright region in the projection display and in the second state forms a dark region in the projection display. The transmission path makes a single pass through the light scattering medium.