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公开(公告)号:WO2021078699A1
公开(公告)日:2021-04-29
申请号:PCT/EP2020/079417
申请日:2020-10-20
Applicant: MERCK PATENT GMBH
Inventor: KIRSCH, Peer , RESCH, Sebastian , SEIM, Henning , LIEBERMAN, Itai , ARAI, Shintaro , TORNOW, Marc , KAMIYAMA, Takuya , DLUGOSCH, Julian , MOINPOUR, Mansour
Abstract: The present invention relates to an electronic switching device comprising an organic molecular layer in contact with a metal nitride electrode for use in memory, sensors, field-effect transistors or Josephson junctions. More particularly, the invention is included in the field of random access non-volatile memristive memories (RRAM). The invention thus further relates to an electronic component comprising a crossbar array comprising a multitude of said electronic switching devices.