公开(公告)号：WO2004084240A3

公开(公告)日：2004-12-02

申请号：PCT/US0322796

申请日：2003-07-23

Applicant: METAL OXIDE TECHNOLOGIES INC

Inventor： IGNATIEV ALEX ,  ZHANG XIN ,  ZENG JIAN MING ,  LIU JIASHU ,  CHOU PENCHU ,  CASTELLANI LOUIS D

IPC: H01L39/14 ,  H01L39/24

CPC classification number: H01L39/143 ,  H01L39/2461

Abstract: The inventive superconducting wire comprises a substrate and a continuous layer of atomically ordered superconducting material. The inventive wire has a length greater than 10 meters.

Abstract translation: 本发明的超导线包括基底和原子排列的超导材料的连续层。 本发明的线长度大于10米。

公开(公告)号：WO2004012278A2

公开(公告)日：2004-02-05

申请号：PCT/US0322805

申请日：2003-07-23

Applicant: METAL OXIDE TECHNOLOGIES INC

Inventor： IGNATIEV ALEX ,  ZHANG XIN ,  ZENG JIAN MING ,  LIU JIASHU ,  CHOU PENCHU ,  CASTELLANI LOUIS D

IPC: C01G1/00 ,  C23C16/02 ,  C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  C23C16/54 ,  H01B12/06 ,  H01B13/00 ,  H01L39/24

CPC classification number: C23C16/45565 ,  C23C16/0209 ,  C23C16/0227 ,  C23C16/408 ,  C23C16/545 ,  H01L39/2438 ,  H01L39/248

Abstract: The invention continuously deposits materials used to grow a superconductor layer onto a moving tape. The invention preferably uses a pay-out reel and take-up reel to respectively dispense and spool the tape substrate at a constant rate. The invention preferably uses a series of stages to form the superconductor layer on the tape, and includes at least one reactor or reaction chamber to deposit one or more materials onto the tape substrate that is used to form the superconductor layer, and one or more chambers to deposit buffer layers between the superconductor and the metal tape substrate or between layers of superconductor, as well as for the deposition of coating layers. The invention also preferably uses transition chambers between the stages to isolate each stage from the other stages.

Abstract translation: 本发明将用于生长超导体层的材料连续地沉积到移动的带上。 本发明优选地使用发放卷轴和卷取卷轴来以恒定速率分配和卷绕带基片。 本发明优选地使用一系列级在带上形成超导体层，并且包括至少一个反应器或反应室，以将一种或多种材料沉积到用于形成超导体层的带基材上，以及一个或多个室 以在超导体和金属带基材之间或超导体层之间沉积缓冲层，以及沉积涂层。 本发明还优选地在级之间使用过渡室，以将每个级与其它级隔离。

公开(公告)号：WO2004012277A3

公开(公告)日：2004-09-30

申请号：PCT/US0322797

申请日：2003-07-23

Applicant: METAL OXIDE TECHNOLOGIES INC

Inventor： IGNATIEV ALEX ,  ZHANG XIN ,  ZENG JIAN MING ,  LIU JIASHU ,  CHOU PENCHU ,  CASTELLANI LOUIS D

IPC: C23C16/40 ,  C23C16/54 ,  H01L39/24

CPC classification number: H01L39/2438 ,  C04B35/45 ,  C04B2235/3208 ,  C04B2235/3215 ,  C04B2235/3284 ,  C04B2235/3286 ,  C23C16/408 ,  C23C16/545 ,  H01L39/248

Abstract: The invention continuously deposits materials used to grow a thin film onto a moving tape. The invention preferably uses a pay-out reel (401) and take-up reel (406) to respectively dispense and spool the tape substrate (408) at a constant rate. The invention preferably uses a series of stages to form the thin film on the tape, and includes at least one reactor or reaction chamber (601c) to deposit one or more materials onto the tape substrate that is used to form the superconductor layer, and one or more chambers (601a, 601b) to deposit buffer layers between the film and the metal tape substrate or between layers of film, as well as for the deposition of coating layers. The invention also preferably uses transition chambers (701) between the stages to isolate each stage from the other stages.

Abstract translation: 本发明连续地将用于生长薄膜的材料沉积到移动的胶带上。 本发明优选地使用送出卷轴（401）和卷取卷轴（406）以恒定的速率分配并卷绕带基材（408）。 本发明优选地使用一系列步骤在带上形成薄膜，并且包括至少一个反应器或反应室（601c）以将一种或多种材料沉积到用于形成超导体层的带基材上，并且一个 或更多个室（601a，601b）以在膜和金属带基材之间或膜层之间沉积缓冲层，以及用于沉积涂层。 本发明还优选地在这些级之间使用过渡室（701）以将每个级与其他级隔离。