公开(公告)号：WO2018013193A2

公开(公告)日：2018-01-18

申请号：PCT/US2017/028108

申请日：2017-04-18

Applicant: MICROLINK DEVICES, INC.

Inventor： PAN, Noren ,  CHAN, Raymond ,  MIYAMOTO, Haruki ,  WIBOWO, Andree ,  OSOWSKI, Mark ,  YOUTSEY, Christopher ,  MCCALLUM, David

Abstract: Some embodiments include a kit for supplying solar power in a battery-powered or fuel cell powered unmanned aerial vehicle (UAV) by incorporating flexible solar cells into a component of a UAV, affixing flexible solar cells to a surface of a UAV, or affixing flexible solar cells to a surface of a component of a UAV. The kit also includes a power conditioning system configured to operate the solar cells within a desired power range and configured to provide power having a voltage compatible with an electrical system of the UAV. Another embodiments include a solar sheet configured for installation on a surface of a UAV or on a surface of a component of a UAV. The solar sheet includes a plurality of solar cells and a polymer layer to which the plurality of solar cells are attached.

公开(公告)号：WO2013101317A2

公开(公告)日：2013-07-04

申请号：PCT/US2012/057966

申请日：2012-09-28

Applicant: MICROLINK DEVICES, INC.

Inventor： PAN, Noren ,  HILLIER, Glen ,  WANLASS, Mark ,  YOUTSEY, Christopher ,  ADAMS, Jessica

IPC: H01L31/0687

CPC classification number: H01L31/1896 ,  B82Y20/00 ,  H01L31/03046 ,  H01L31/035236 ,  H01L31/0443 ,  H01L31/046 ,  H01L31/047 ,  H01L31/0687 ,  H01L31/06875 ,  H01L31/0725 ,  H01L31/1844 ,  Y02E10/544 ,  Y02P70/521

Abstract: Methods of producing single-junction or multi-junction InP-based solar cells grown latticed-matched on a InP substrate or grown on metamorphic layers on a GaAs substrate, with the substrate subsequently removed in a nondestructive manner via the epitaxial lift-off (ELO) technique, and devices produced using the methods are described herein.

Abstract translation: 生产在InP衬底上网格化匹配或在GaAs衬底上的变质层上生长的单结或多结InP基太阳能电池的方法，随后通过外延剥离（ELO）以非破坏性方式去除衬底 ）技术，并且使用这些方法制造的器件在本文中描述。

公开(公告)号：WO2018013193A3

公开(公告)日：2018-01-18

申请号：PCT/US2017/028108

申请日：2017-04-18

Applicant: MICROLINK DEVICES, INC.

Inventor： PAN, Noren ,  CHAN, Raymond ,  MIYAMOTO, Haruki ,  WIBOWO, Andree ,  OSOWSKI, Mark ,  YOUTSEY, Christopher ,  MCCALLUM, David

IPC: H01L31/048 ,  H01L31/0687

Abstract: Some embodiments include a kit for supplying solar power in a battery-powered or fuel cell powered unmanned aerial vehicle (UAV) by incorporating flexible solar cells into a component of a UAV, affixing flexible solar cells to a surface of a UAV, or affixing flexible solar cells to a surface of a component of a UAV. The kit also includes a power conditioning system configured to operate the solar cells within a desired power range and configured to provide power having a voltage compatible with an electrical system of the UAV. Another embodiments include a solar sheet configured for installation on a surface of a UAV or on a surface of a component of a UAV. The solar sheet includes a plurality of solar cells and a polymer layer to which the plurality of solar cells are attached.

Abstract translation: 一些实施例包括用于通过将柔性太阳能电池结合到UAV的部件中来将电池供电或燃料电池供电的无人驾驶飞行器（UAV）中的太阳能供应，将柔性太阳能电池附接到 无人飞行器的表面，或者将柔性太阳能电池固定到无人飞行器的部件的表面。 该套件还包括功率调节系统，该功率调节系统被配置为在期望的功率范围内操作太阳能电池并且被配置为提供具有与UAV的电气系统兼容的电压的功率。 另一个实施例包括配置用于安装在UAV的表面上或UAV的部件的表面上的太阳能片。 太阳能片包括多个太阳能电池和附着有多个太阳能电池的聚合物层。

公开(公告)号：WO2003009368A2

公开(公告)日：2003-01-30

申请号：PCT/US2002/023278

申请日：2002-07-22

Applicant: MICROLINK DEVICES, INC.

Inventor： PAN, Noren ,  HAN, Byung-Kwon

IPC: H01L21/338

CPC classification number: H01L29/66318 ,  H01L29/0817 ,  H01L29/161 ,  H01L29/452 ,  H01L29/7371

Abstract: A heterojunction bipolar transistor is provided having an improved current gain cutoff frequency. The heterojunction bipolar transistor includes a contact region formed from InGaAsSb. The contact region allows an emitter region of the heterojunction bipolar transistor to realize a lower contact resistance value to yield an improved cutoff frequency (f T ).

Abstract translation: 提供具有改善的电流增益截止频率的异质结双极晶体管。 异质结双极晶体管包括由InGaAsSb形成的接触区域。 接触区域允许异质结双极晶体管的发射极区域实现较低的接触电阻值以产生改善的截止频率（fT）。

公开(公告)号：WO2009005824A1

公开(公告)日：2009-01-08

申请号：PCT/US2008/008262

申请日：2008-07-03

Applicant: MICROLINK DEVICES, INC. ,  PAN, Noren ,  HILLIER, Glen ,  VU, Duy, Phach ,  TATAVARTI, Rao ,  YOUTSEY, Christopher ,  MCCALLUM, David

Inventor： PAN, Noren ,  HILLIER, Glen ,  VU, Duy, Phach ,  TATAVARTI, Rao ,  YOUTSEY, Christopher ,  MCCALLUM, David

IPC: H01L31/042

CPC classification number: H01L31/1852 ,  H01L31/06875 ,  Y02E10/544

Abstract: The present invention utilizes epitaxial lift-off in which a sacrificial layer is included in the epitaxial growth between the substrate and a thin film HI-V compound solar cell. To provide support for the thin film III-V compound solar cell in absence of the substrate, a backing layer is applied to a surface of the thin film III-V compound solar cell before it is separated from the substrate. To separate the thin film III-V compound solar cell from the substrate, the sacrificial layer is removed as part of the epitaxial lift-off. Once the substrate is separated from the thin film III-V compound solar cell, the substrate may then be reused in the formation of another thin film III-V compound solar cell.

Abstract translation: 本发明利用外延剥离，其中在衬底和薄膜HI-V复合太阳能电池之间的外延生长中包括牺牲层。 为了在没有基板的情况下为薄膜III-V复合太阳能电池提供支撑，在薄膜III-V复合太阳能电池从基板分离之前，将背衬层施加到薄膜III-V复合太阳能电池的表面。 为了将薄膜III-V复合太阳能电池与衬底分离，牺牲层作为外延剥离的一部分被去除。 一旦基板与薄膜III-V复合太阳能电池分离，则可以将基板重新用于形成另一薄膜III-V复合太阳能电池。

公开(公告)号：WO2003009396A2

公开(公告)日：2003-01-30

申请号：PCT/US2002/023277

申请日：2002-07-22

Applicant: MICROLINK DEVICES, INC.

Inventor： PAN, Noren

IPC: H01L31/072

CPC classification number: H01L29/66318 ,  H01L29/0817 ,  H01L29/1004 ,  H01L29/452 ,  H01L29/7371

Abstract: A heterojunction bipolar transistor is provided that has a reduced turn-on voltage threshold. A base spacer layer is provided and alternately an emitter layer is provided that has a lowered energy gap. The lowered energy gap of the base spacer or the emitter spacer allow the heterojunction bipolar transistor to realize a lower turn-on voltage threshold. The thickness of the emitter layer if utilized is kept to a minimum to reduce the associated space charge recombination current in the heterojunction bipolar transistor.

Abstract translation: 提供了具有降低的导通电压阈值的异质结双极晶体管。 提供基底间隔层，并且交替地提供具有降低的能隙的发射极层。 基极间隔物或发射极间隔物的能量下降使得异质结双极晶体管实现较低的导通电压阈值。 如果使用发射极层的厚度保持最小以减少异质结双极晶体管中相关的空间电荷复合电流。

公开(公告)号：WO2013049614A1

公开(公告)日：2013-04-04

申请号：PCT/US2012/057986

申请日：2012-09-28

Applicant: MICROLINK DEVICES, INC. ,  PAN, Noren ,  ELARDE, Victor, C. ,  YOUTSEY, Christopher ,  OSOWSKI, Mark

Inventor： PAN, Noren ,  ELARDE, Victor, C. ,  YOUTSEY, Christopher ,  OSOWSKI, Mark

IPC: H01L33/00

CPC classification number: H01L33/0079

Abstract: A method of fabricating a light emitting diode using an epitaxial lift-off process includes forming a sacrificial layer on a substrate, forming a light emitting diode structure on the sacrificial layer with an epitaxial material, forming a light reflecting layer on the light emitting diode structure, and removing the sacrificial layer using an etching process to separate the substrate from the light emitting diode structure.

Abstract translation: 使用外延剥离工艺制造发光二极管的方法包括在衬底上形成牺牲层，在牺牲层上用外延材料形成发光二极管结构，在发光二极管结构上形成光反射层 ，并且使用蚀刻工艺去除牺牲层，以将衬底与发光二极管结构分离。

公开(公告)号：WO2008097604A2

公开(公告)日：2008-08-14

申请号：PCT/US2008/001614

申请日：2008-02-07

Applicant: MICROLINK DEVICES, INC. ,  WIBOWO, Andree ,  PAN, Noren

Inventor： WIBOWO, Andree ,  PAN, Noren

IPC: H01L27/06 ,  H01L21/8252

CPC classification number: H01L27/0605 ,  H01L21/8249 ,  H01L21/8252 ,  H01L27/0623

Abstract: Methods and systems for fabricating an integrated BiFET using two separate growth procedures are disclosed. Performance of the method fabricates the FET portion of the BiFET in a first fabrication environment. Performance of the method fabricates the HBT portion of the BiFET in a second fabrication environment. By separating the fabrication of the FET portion and the HBT portion in two or more separate reactors, the optimum device performance can be achieved for both devices.

Abstract translation: 公开了使用两个独立的生长过程制造集成BiFET的方法和系统。 该方法的性能在第一制造环境中制造BiFET的FET部分。 该方法的性能在第二制造环境中制造BiFET的HBT部分。 通过在两个或多个单独的反应器中分离FET部分和HBT部分的制造，可以为两个器件实现最佳的器件性能。

公开(公告)号：WO2003009396A3

公开(公告)日：2003-01-30

申请号：PCT/US2002/023277

申请日：2002-07-22

Applicant: MICROLINK DEVICES, INC.

Inventor： PAN, Noren

IPC: H01L31/072

Abstract: A heterojunction bipolar transistor (10) is provided that has a reduced turn-on voltage threshold. A base spacer layer (18) is provided and alternately an emitter layer (20) is provided that has a lowered energy gap. The lowered energy gap of the base spacer or the emitter spacer allow the heterojunction bipolar transistor to realize a lower turn-on voltage threshold. The thickness of the emitter layer if utilized is kept to a minimum to reduce the associated space charge recombination current in the heterojunction bipolar transistor.

公开(公告)号：WO2003009339A3

公开(公告)日：2003-01-30

申请号：PCT/US2002/023290

申请日：2002-07-22

Applicant: MICROLINK DEVICES, INC.

Inventor： PAN, Noren

IPC: H01L29/161

Abstract: A heterojunction bipolar transistor is provided having an improved current gain cutoff frequency. The heterojunction bipolar transistor includes a graded base layer formed from antimony. The graded base allows the heterojunction bipolar transistor to establish a quasi-electric field to yield an improved cutoff frequency.