METHODS FOR FABRICATING THIN FILM III-V COMPOUND SOLAR CELL
    2.
    发明申请
    METHODS FOR FABRICATING THIN FILM III-V COMPOUND SOLAR CELL 审中-公开
    制备薄膜III-V复合太阳能电池的方法

    公开(公告)号:WO2009005825A1

    公开(公告)日:2009-01-08

    申请号:PCT/US2008/008263

    申请日:2008-07-03

    CPC classification number: H01L31/1852 H01L31/06875 Y02E10/544

    Abstract: The present invention utilizes epitaxial lift-off in which a sacrificial layer is included in the epitaxial growth between the substrate and a thin film III-V compound solar cell. To provide support for the thin film III-V compound solar cell in absence of the substrate, a backing layer is applied to a surface of the thin film III-V compound solar cell before it is separated from the substrate. To separate the thin film III-V compound solar cell from the substrate, the sacrificial layer is removed as part of the epitaxial lift-off. Once the substrate is separated from the thin film III-V compound solar cell, the substrate may then be reused in the formation of another thin film III-V compound solar cell.

    Abstract translation: 本发明利用外延剥离,其中在衬底和薄膜III-V复合太阳能电池之间的外延生长中包括牺牲层。 为了在没有基板的情况下为薄膜III-V复合太阳能电池提供支撑,在薄膜III-V复合太阳能电池从基板分离之前,将背衬层施加到薄膜III-V复合太阳能电池的表面。 为了将薄膜III-V复合太阳能电池与衬底分离,牺牲层作为外延剥离的一部分被去除。 一旦基板与薄膜III-V复合太阳能电池分离,则可以将基板重新用于形成另一薄膜III-V复合太阳能电池。

    THIN FILM III-V COMPOUND SOLAR CELL
    3.
    发明申请
    THIN FILM III-V COMPOUND SOLAR CELL 审中-公开
    薄膜III-V复合太阳能电池

    公开(公告)号:WO2009005824A1

    公开(公告)日:2009-01-08

    申请号:PCT/US2008/008262

    申请日:2008-07-03

    CPC classification number: H01L31/1852 H01L31/06875 Y02E10/544

    Abstract: The present invention utilizes epitaxial lift-off in which a sacrificial layer is included in the epitaxial growth between the substrate and a thin film HI-V compound solar cell. To provide support for the thin film III-V compound solar cell in absence of the substrate, a backing layer is applied to a surface of the thin film III-V compound solar cell before it is separated from the substrate. To separate the thin film III-V compound solar cell from the substrate, the sacrificial layer is removed as part of the epitaxial lift-off. Once the substrate is separated from the thin film III-V compound solar cell, the substrate may then be reused in the formation of another thin film III-V compound solar cell.

    Abstract translation: 本发明利用外延剥离,其中在衬底和薄膜HI-V复合太阳能电池之间的外延生长中包括牺牲层。 为了在没有基板的情况下为薄膜III-V复合太阳能电池提供支撑,在薄膜III-V复合太阳能电池从基板分离之前,将背衬层施加到薄膜III-V复合太阳能电池的表面。 为了将薄膜III-V复合太阳能电池与衬底分离,牺牲层作为外延剥离的一部分被去除。 一旦基板与薄膜III-V复合太阳能电池分离,则可以将基板重新用于形成另一薄膜III-V复合太阳能电池。

    METHODS FOR FABRICATING THIN FILM III-V COMPOUND SOLAR CELL
    5.
    发明申请
    METHODS FOR FABRICATING THIN FILM III-V COMPOUND SOLAR CELL 审中-公开
    制备薄膜III-V复合太阳能电池的方法

    公开(公告)号:WO2009005825A8

    公开(公告)日:2010-02-11

    申请号:PCT/US2008008263

    申请日:2008-07-03

    CPC classification number: H01L31/1852 H01L31/06875 Y02E10/544

    Abstract: The present invention utilizes epitaxial lift-off in which a sacrificial layer is included in the epitaxial growth between the substrate and a thin film III-V compound solar cell. To provide support for the thin film III-V compound solar cell in absence of the substrate, a backing layer is applied to a surface of the thin film III-V compound solar cell before it is separated from the substrate. To separate the thin film III-V compound solar cell from the substrate, the sacrificial layer is removed as part of the epitaxial lift-off. Once the substrate is separated from the thin film III-V compound solar cell, the substrate may then be reused in the formation of another thin film III-V compound solar cell.

    Abstract translation: 本发明利用外延剥离,其中在衬底和薄膜III-V复合太阳能电池之间的外延生长中包括牺牲层。 为了在没有基板的情况下为薄膜III-V复合太阳能电池提供支撑,在薄膜III-V复合太阳能电池从基板分离之前,将背衬层施加到薄膜III-V复合太阳能电池的表面。 为了将薄膜III-V复合太阳能电池与衬底分离,牺牲层作为外延剥离的一部分被去除。 一旦基板与薄膜III-V复合太阳能电池分离,则可以将基板重新用于形成另一薄膜III-V复合太阳能电池。

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