Abstract:
Apparatuses for providing a current independent of temperature are described. An example apparatus includes a current generator (110) that includes two components (115a, 115b) that are configured to respond equally and opposite to changes in temperature. The responses of the two components (115a, 115b) may allow a current provided by the current generator (110) to remain independent of temperature. One of the two components (115a, 115b) in the current generator (110) may mirror a component included in a voltage source (105) that is configured to provide a voltage to the current generator (110).
Abstract:
Apparatuses, methods, and current generators that generate current are described. An example apparatus includes a current source configured to provide a current. The current source may be coupled to a voltage source via a transistor. The transistor may be configured to provide the voltage source to the current source based on a voltage of a gate of the transistor. The example apparatus may further include an amplifier configured to provide a voltage to the gate of the transistor based on a voltage differential between two inputs. The voltage differential between the two inputs may adjust due to process, voltage or temperature changes such that the current provided by the current source remains constant.
Abstract:
A semiconductor device (10) may include a bandgap circuit (40) that outputs a reference voltage (V bgr ). The semiconductor device (10) may also include a startup circuit (50) coupled to the bandgap circuit (40). The startup circuit (50) may connect a voltage source to a node that corresponds to an output of the bandgap circuit (40) in response to the bandgap circuit (40) being initialized. The startup circuit (50) may also disconnect the voltage source from the node in response to the reference voltage being greater than a threshold.
Abstract:
An apparatuses and methods for buffering a voltage from a circuit without current drive ability are described. An example apparatus includes a voltage buffer that includes two identical stages. The first stage is configured to receive an input voltage and produce an intermediate voltage as an output. The second stage is configured to receive the intermediate voltage and provide an output voltage that is equal to the input voltage. The voltage buffer may be coupled to a current source. The second stage of the voltage buffer may have current drive ability.
Abstract:
Methods and apparatuses are provided for temperature independent resistive-capacitive delay circuits of a semiconductor device. For example, delays associated with ZQ calibration or timing of the RAS chain may be implemented that to include circuitry that exhibits both proportional to absolute temperature (PTAT) characteristics and complementary to absolute temperature (CTAT) characteristics in order to control delay times across a range of operating temperatures. The RC delay circuits may include a first type of circuitry having impedance with PTAT characteristics that is coupled to an output node in parallel with a second type of circuitry having impedance with CTAT characteristics. The first type of circuitry may include a resistor and the second type of circuitry may include a transistor, in some embodiments.
Abstract:
An apparatus is described comprising a bandgap reference circuit (102) comprising: an amplifier (104) including first and second inputs and an output; and a bandgap transistor (106) coupled to the output of the amplifier (104) at a control electrode thereof, the bandgap transistor (106) being further coupled commonly to the first and second inputs of the amplifier (104) at a first electrode thereof to form a feedback path. The apparatus further comprises a resistor (114) coupled to the first electrode of the bandgap transistor (106).