Abstract:
The present invention relates to a device (1) for microwave treatment of a material, wherein the device defines a treatment space (3) for receiving the material to be treated by the microwaves (14). The device comprises at least one microwave-generating unit (10) arranged outside the treatment space and adapted to provide microwaves (14) into the treatment space for treating the material, a microwave absorbent (21), and a housing (20) made of a non-microwave transparent material, in which housing the microwave absorbent (21) is arranged. The housing (20) is provided with a plurality of openings (29) for microwaves (15) to pass through to the microwave absorbent (21).
Abstract:
A method of patterning a plurality of layers (L1, L2, L3, L4) of a work piece (2404) in a series of writing cycles in one or a plurality of write machines, the workpiece being deviced to have a number of N layers (L1, L2, L3, L4) and layers of the workpiece having one or a plurality of boundary condition (s) for pattern position, the method comprising the steps of: determining the boundary conditions of layers 1 to N, calculating deviations due to the boundary conditions and calculating a compensation for the deviation of the first transformation added with the assigned part of the deviation due to the boundary conditions.
Abstract:
A pick-and-place tool configured to pick and place at least one die on a workpiece includes a mounting head. The mounting head includes a die position determining unit configured to one of measure and detect an actual position of at least one die during a time between the placement of the at least one die on the workpiece and the picking up of a subsequent die for placement on the workpiece.
Abstract:
A method for patterning a workpiece in a direct write machine in the manufacturing of a multilayer stack, wherein a first circuit pattern (1304) comprising patterns for connection points is transformed according to determined fitting tolerances to fit to connection points of a second circuit pattern (1306) and to circuit pattern(s) of specific features such as random placed dies, or group of dies, on or in the workpiece. The second layer may be a previously formed layer or a layer to be formed on the same workpiece or on a different workpiece for the stack. Pattern data associated with selected die is transformed into adjusted circuit pattern data using the transformation defined by the transformed positions such that the circuit pattern is fitted to the selected die(s).
Abstract:
A method for patterning a workpiece provided with dies in a direct write machine, wherein measurement data of positions of the dies in terms of location and orientation together with the workpiece location and orientation relative the writer coordinate system is used to determine a transformation of the measured positions into transformed positions defined in the coordinate system of the direct write machine. Pattern data associated with a selected die, or group of dies, is transformed into adjusted circuit pattern data dependent both on the original pattern data and the transformed positions, wherein the adjusted circuit pattern data represents the circuit pattern of the plurality of dies, or group of dies, such that the adjusted circuit pattern is fitted to a plurality of sub-areas of the workpiece area, and wherein each sub-area is associated with a die, or group of dies, among the plurality of dies distributed on the workpiece. A pattern is then written on the workpiece according to the adjusted circuit pattern data.
Abstract:
A method for patterning a second layer of a work piece in a direct write machine in the manufacturing of a multilayer system-in-package stack. The work piece having a first layer with a plurality of electrical components in the form of dies (1502) arbitrarily placed. Each component having connection points where some need to be connected between the components. A first pattern wherein different zones (1510) comprising connection points of dies distributed in the first layer are associated with different requirements on alignment. The method comprising the steps of: a. Detecting sacred zones in first pattern that have a high requirement on alignment to selected features of the system-in-package stack or to the placed components; b. Detecting stretch zones (1510) of the first pattern that are allowed to have a lower requirement on alignment to other features of the system-in-package stack; c. Transforming the first pattern by calculating adjusted first pattern data comprising transformation of the original circuit pattern such that: i. connection points in adjacent sacred zones are aligned within a pre-settable alignment deviation parameter; and such that ii. deviations between the positions of corresponding connection points in the sacred zones are compensated for in the pattern for connection points of the stretch zones; d. writing a pattern on the layer of the work piece according to the adjusted pattern data. The first pattern may also be simultaneously matched to a second pattern.
Abstract:
The present disclosure relates to formation of latent images in a radiation sensitive layer applied to a substrate (210) that is transparent to or transmissive of radiation at the exposing wavelength. In particular, it relates to so-called backside lithography, in which the final lens (101) of an exposing system is positioned to project electromagnetic radiation through a first side of the transparent substrate (110) and expose a radiation sensitive layer (214) that overlays a second side of the transparent substrate that is opposite the first side. Five alternative embodiments for further treatment to form a radiation opaque layer corresponding to the latent image (the image or its inverse) are described. These methods and corresponding devices are useful for producing masks (sometimes called reticles), for producing latent images in semiconductor devices and for forming features of semiconductor devices using masks.