公开(公告)号：WO2015061177A3

公开(公告)日：2015-04-30

申请号：PCT/US2014/061177

申请日：2014-10-17

Applicant: PHONONIC DEVICES, INC.

Inventor： CAYLOR, James Christopher ,  WELLENIUS, Ian Patrick ,  CHARLES, William O. ,  CANTU, Pablo ,  GRAY, Allen L.

IPC: H01L35/16 ,  H01L35/34 ,  H01L35/18

Abstract: A thermoelectric material and methods of manufacturing thereof are disclosed. In general, the thermoelectric material comprises a Group V-VI host, or matrix, material and Group III-V or Group IV-VI nanoinclusions within the Group V-VI host material. By incorporating the Group III-V or Group IV-VI nanoinclusions into the Group V-VI host material, the performance of the thermoelectric material can be improved.

公开(公告)号：WO2015109227A1

公开(公告)日：2015-07-23

申请号：PCT/US2015/011816

申请日：2015-01-16

Applicant: PHONONIC DEVICES, INC.

Inventor： REED, Jason D. ,  RUMSEY, Jaime A. ,  HESS, Ronald R. ,  PREJS, Arthur ,  WELLENIUS, Ian Patrick ,  GRAY, Allen L.

IPC: C23C28/02 ,  H01L35/16 ,  H01L35/34

CPC classification number: H01L21/283 ,  C23C28/021 ,  C23C28/023 ,  H01L21/02562 ,  H01L29/66068 ,  H01L31/022425 ,  H01L31/022458 ,  H01L31/02363 ,  H01L33/22 ,  H01L35/02 ,  H01L35/08 ,  H01L35/16 ,  H01L35/34

Abstract: Embodiments of a low resistivity ohmic contact are disclosed. In some embodiments, a method of fabricating a low resistivity ohmic contact includes providing a semiconductor material layer and intentionally roughening the semiconductor material layer to create a characteristic surface roughness. The method also includes providing an ohmic contact metal layer on a surface of the semiconductor material layer and providing a diffusion barrier metal layer on a surface of the ohmic contact metal layer opposite the semiconductor material layer. In this way, the adhesive force between the semiconductor material layer and the ohmic contact metal layer may be increased.

Abstract translation: 公开了低电阻率欧姆接触的实施例。 在一些实施例中，制造低电阻率欧姆接触的方法包括提供半导体材料层并有意地使半导体材料层变粗糙以产生特征表面粗糙度。 该方法还包括在半导体材料层的表面上提供欧姆接触金属层，并在与半导体材料层相对的欧姆接触金属层的表面上提供扩散阻挡金属层。 以这种方式，可以增加半导体材料层和欧姆接触金属层之间的粘合力。

公开(公告)号：WO2015061179A1

公开(公告)日：2015-04-30

申请号：PCT/US2014/061197

申请日：2014-10-17

Applicant: PHONONIC DEVICES, INC.

Inventor： WELLENIUS, Ian Patrick ,  CANTU, Pablo ,  GRAY, Allen L.

IPC: G01N25/18 ,  G01N27/02 ,  G01N21/17 ,  G01K11/12

CPC classification number: G01K11/125 ,  G01N21/1717 ,  G01N25/18 ,  G01N27/02 ,  G01N2021/1731

Abstract: Systems and methods for characterizing one or more properties of a material are disclosed. In some embodiments, the one or more properties include one or more thermal properties of the material, one or more thermoelectric properties of the material, such as the Seebeck or Peltier coefficient, and/or one or more thermomagnetic properties of the material, such as the Lorenz number. In some embodiments, a method of characterizing one or more properties of a sample material (20) comprises heating the sample material (20) and, while heating the sample material, obtaining one or more temperature measurements for at least one surface (18, 24) of the sample material via one or more thermoreflectance probes (30) and obtaining one or more electric measurements for the sample material that correspond in time to the one or more temperature measurements. The method further comprises computing one or more parameters that characterize one or more properties of the sample material based on the measurements.

Abstract translation: 公开了用于表征材料的一种或多种性质的系统和方法。 在一些实施方案中，一个或多个性质包括材料的一种或多种热性质，材料的一种或多种热电性质，例如塞贝克或珀耳帖系数，和/或材料的一种或多种热磁性质，例如 洛伦兹号。 在一些实施例中，表征样品材料（20）的一个或多个性质的方法包括加热样品材料（20），并且在加热样品材料的同时，获得至少一个表面（18,24）的一个或多个温度测量值 ）通过一个或多个热电反应探针（30）获得样品材料，并且获得对于一次或多次温度测量在时间上对应的样品材料的一个或多个电测量。 该方法还包括基于测量来计算表征样品材料的一个或多个特性的一个或多个参数。