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公开(公告)号:WO2016069831A1
公开(公告)日:2016-05-06
申请号:PCT/US2015/057939
申请日:2015-10-29
Applicant: PRESIDENT AND FELLOWS OF HARVARD COLLEGE
Inventor: LIEBER, Charles, M. , GAO, Ruixuan , MANKIN, Max, Nathan , DAY, Robert , PARK, Hong-Gyu , NO, You-Shin
CPC classification number: H01L21/02653 , B82Y10/00 , B82Y40/00 , C23C16/402 , C23C16/45525 , C23C16/56 , C30B25/20 , C30B29/06 , C30B29/66 , C30B33/10 , H01L21/02164 , H01L21/0228 , H01L21/02381 , H01L21/02433 , H01L21/02532 , H01L21/02584 , H01L21/02603 , H01L29/0649 , H01L29/068 , H01L29/16 , H01L29/365 , H01L29/66136 , H01L29/861 , H01L31/02161 , H01L31/028 , H01L31/035227 , H01L31/035272 , H01L31/1804 , H01L33/0054 , H01L33/025 , H01L33/06 , H01L33/18 , H01L33/34 , H01L33/44 , H02S40/44
Abstract: The present invention generally relates to nanoscale wires and, in particular, to nanoscale wires with heterojunctions, such as tip- localized homo- or heterojunctions. In one aspect, the nanoscale wire (10) may include a core (20), an inner shell (30), preferably insulating, surrounding the core, and an outer shell (40) surrounding the inner shell. The outer shell contacts the core at an end portion of the nanoscale core. In some cases, such nanoscale wires may be used as electrical devices. For example a p-n junction may be created where the inner shell is electrically insulating, and the core and the outer shell are p-doped and n-doped. Other aspects of the present invention generally relate to methods of making or using such nanoscale wires, devices, or kits including such nanoscale wires, or the like.
Abstract translation: 本发明一般涉及纳米线,特别涉及具有异质结的纳米线,例如尖端局部均匀或异质结。 在一个方面,纳米线(10)可以包括芯(20),优选地围绕芯的绝缘的内壳(30)和围绕内壳的外壳(40)。 外壳在纳米级芯的端部处与芯接触。 在某些情况下,这种纳米尺寸的导线可以用作电气装置。 例如,可以产生p-n结,其中内壳是电绝缘的,并且芯和外壳是p掺杂和n掺杂的。 本发明的其它方面通常涉及制造或使用这种纳米尺寸线,器件或包括这种纳米线的套件等的方法。