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    NANOSCALE WIRES, NANOSCALE WIRE FET DEVICES, AND NANOTUBE-ELECTRONIC HYBRID DEVICES FOR SENSING AND OTHER APPLICATIONS
    1.
    发明申请
    NANOSCALE WIRES, NANOSCALE WIRE FET DEVICES, AND NANOTUBE-ELECTRONIC HYBRID DEVICES FOR SENSING AND OTHER APPLICATIONS 审中-公开

    公开(公告)号：WO2012170630A3

    公开(公告)日：2012-12-13

    申请号：PCT/US2012/041253

    申请日：2012-06-07

    Applicant: PRESIDENT AND FELLOWS OF HARVARD COLLEGE ,  LIEBER, Charles, M. ,  DUAN, Xiaojie ,  GAO, Ruixuan ,  XIE, Ping ,  JIANG, Xiaocheng

    Inventor： LIEBER, Charles, M. ,  DUAN, Xiaojie ,  GAO, Ruixuan ,  XIE, Ping ,  JIANG, Xiaocheng

    IPC: H01L29/78 ,  H01L21/336

    Abstract: The present invention generally relates to nanotechnology, including field effect transistors and other devices used as sensors (for example, for electrophysiological studies), nanotube structures, and applications. Certain aspects of the present invention are generally directed to transistors such as field effect transistors, and other similar devices. In one set of embodiments, a field effect transistor is used where a nanoscale wire, for example, a silicon nanowire, acts as a transistor channel connecting a source electrode to a drain electrode. In some cases, a portion of the transistor channel is exposed to an environment that is to be determined, for example, the interior or cytosol of a cell. A nanotube or other suitable fluidic channel may be extended from the transistor channel into a suitable environment, such as a contained environment within a cell, so that the environment is in electrical communication with the transistor channel via the fluidic channel. In some embodiments, the rest of the transistor channel may be coated, e.g., so that the electrical properties of the transistor channel reflect the electrical behavior of the environment that the fluidic channel is in communication with. Other aspects of the invention are generally directed to methods of making such sensors, methods of using such sensors, kits involving such sensors, or the like.

    NANOSCALE WIRE-BASED DATA STORAGE
    3.
    发明申请
    NANOSCALE WIRE-BASED DATA STORAGE 审中-公开
    纳米线基数据存储

    公开(公告)号：WO2007044034A2

    公开(公告)日：2007-04-19

    申请号：PCT/US2005/044212

    申请日：2005-12-06

    Applicant: PRESIDENT AND FELLOWS OF HARVARD COLLEGE ,  LIEBER, Charles, M. ,  WU, Yue ,  YAN, Hao

    Inventor： LIEBER, Charles, M. ,  WU, Yue ,  YAN, Hao

    IPC: H01R24/00

    CPC classification number: H01L29/0665 ,  B82Y10/00 ,  B82Y30/00 ,  G11C11/22 ,  G11C11/223 ,  G11C11/54 ,  G11C11/56 ,  G11C11/5657 ,  G11C13/003 ,  G11C13/025 ,  G11C2213/16 ,  G11C2213/17 ,  G11C2213/18 ,  G11C2213/75 ,  G11C2213/77 ,  H01L29/0673 ,  H01L29/068 ,  H01L29/78391

    Abstract: The present invention generally relates to nanotechnology and sub­microelectronic devices that can be used in circuitry and, in some cases, to nanoscale wires and other nanostructures able to encode data. One aspect of the invention provides a nanoscale wire or other nanostructure having a region that is electrically-polarizable, for example, a nanoscale wire may comprise a core and an electrically-polarizable shell. In some cases, the electrically-polarizable region is able to retain its polarization state in the absence of an external electric field. All, or only a portion, of the electrically­polarizable region may be polarized, for example, to encode one or more bits of data. In one set of embodiments, the electrically-polarizable region comprises a functional oxide or a ferroelectric oxide material, for example, BaTiO 3 , lead zirconium titanate, or the like. In some embodiments, the nanoscale wire (or other nanostructure) may further comprise other materials, for example, a separation region separating the electrically­polarizable region from other regions of the nanoscale wire. For example, in a nanoscale wire, one or more intermediate shells may separate the core from the electrically­polarizable shell.

    Abstract translation: 本发明一般涉及可用于电路中并且在某些情况下可用于纳米级线和其他能够编码数据的纳米结构的纳米技术和次级微电子器件。 本发明的一个方面提供了具有可电极化的区域的纳米线或其他纳米结构，例如纳米线可以包括核和电极化壳。 在一些情况下，电极化区域能够在没有外部电场的情况下保持其极化状态。 例如，所有或只有一部分电极和可怕极化区域可以被极化，以编码一个或多个数据位。 在一组实施例中，可电极化区域包括功能氧化物或铁电氧化物材料，例如BaTiO 3，钛酸铅锆等。 在一些实施例中，纳米线（或其他纳米结构）可以进一步包括其他材料，例如将纳米级线的其他区域与电和可;的可极化区域分开的分离区域。 例如，在纳米线中，一个或多个中间壳可以将芯与电极和可怕的极化壳分开。

    TECHNIQUES AND SYSTEMS FOR INJECTION AND/OR CONNECTION OF ELECTRICAL DEVICES
    5.
    发明申请
    TECHNIQUES AND SYSTEMS FOR INJECTION AND/OR CONNECTION OF ELECTRICAL DEVICES 审中-公开
    电气设备注入和/或连接的技术和系统

    公开(公告)号：WO2017024154A1

    公开(公告)日：2017-02-09

    申请号：PCT/US2016/045587

    申请日：2016-08-04

    Applicant: PRESIDENT AND FELLOWS OF HARVARD COLLEGE

    Inventor： LIEBER, Charles, M. ,  HONG, Guosong ,  FU, Tian-ming ,  HUANG, Jinlin ,  ZHOU, Tao

    IPC: A61M5/00 ,  A61L29/14 ,  A61M5/178 ,  A61M5/32 ,  B01J19/00 ,  B05D5/00 ,  G01N33/53

    CPC classification number: G01N33/53 ,  A61N1/00 ,  A61N1/05 ,  A61N1/0531

    Abstract: The present invention generally relates to nanoscale wires, nanoscale sensing elements, and/or injectable devices. In some embodiments, the present invention is directed to electronic devices that can be injected or inserted into soft matter, such as biological tissue or polymeric matrixes. For example, the device may be passed through a tube into the medium. To avoid or minimize crumpling, the device may exit the tube at substantially the same rate that the tube is withdrawn from the medium. Other components, such as fluids or cells, may also be injected or inserted. In addition, in some cases, the device, after insertion or injection, may be connected to an external electrical circuit, for example, by printing a conductive path on a medium or on a flexible substrate. The path may be printed using conductive inks, e.g., containing carbon nanotubes or other suitable materials.

    Abstract translation: 本发明一般涉及纳米尺度线，纳米级感测元件和/或可注射装置。 在一些实施方案中，本发明涉及可以注入或插入软物质例如生物组织或聚合物基质中的电子装置。 例如，装置可以通过管进入介质。 为了避免或最小化皱纹，装置可以以与管从介质中取出的速率基本相同的速率离开管。 也可以注入或插入其它组分，例如流体或细胞。 此外，在一些情况下，装置在插入或注入之后可以连接到外部电路，例如通过在介质上或柔性基板上印刷导电路径。 路径可以使用导电油墨印刷，例如含有碳纳米管或其它合适的材料。

    ANISOTROPIC DEPOSITION IN NANOSCALE WIRES
    6.
    发明申请
    ANISOTROPIC DEPOSITION IN NANOSCALE WIRES 审中-公开
    纳米线中的各向异性沉积

    公开(公告)号：WO2014123860A2

    公开(公告)日：2014-08-14

    申请号：PCT/US2014/014596

    申请日：2014-02-04

    Applicant: PRESIDENT AND FELLOWS OF HARVARD COLLEGE

    Inventor： LIEBER, Charles, M. ,  KEMPA, Thomas, J. ,  KIM, Sun-Kyung ,  DAY, Robert ,  PARK, Hong-gyu

    CPC classification number: H01L21/02603 ,  C30B25/04 ,  C30B25/18 ,  C30B29/06 ,  C30B29/08 ,  C30B29/602 ,  H01L21/02381 ,  H01L21/02428 ,  H01L21/02433 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/30604 ,  H01L29/0669 ,  H01L29/16

    Abstract: The present invention generally relates to nanoscale wires, including anisotropic deposition in nanoscale wires. In one set of embodiments, material may be deposited on certain portions of a nanoscale wire, e.g., anisotropically. For example, material may be deposited on a first facet of a crystalline nanoscale wire but not on a second facet. In some cases, additional materials may be deposited thereon, and/or the portions of the nanoscale wire may be removed, e.g., to produce vacant regions within the nanoscale wire, which may contain gas or other species. Other embodiments of the invention may be directed to articles made thereby, devices containing such nanoscale wires, kits involving such nanoscale wires, or the like.

    Abstract translation: 本发明一般涉及纳米线，包括纳米尺度线中的各向异性沉积。 在一组实施例中，材料可以沉积在纳米级线的某些部分上，例如各向异性地沉积。 例如，材料可以沉积在晶体纳米线的第一面上，但不能沉积在第二面上。 在一些情况下，可以在其上沉积另外的材料，和/或可以去除纳米级线的部分，例如，以在纳米级线内产生可能含有气体或其它物质的空穴区域。 本发明的其它实施例可以涉及由此制成的制品，包含这种纳米尺寸线的装置，涉及这种纳米线的套件等。

    NANOSENSORS AND RELATED TECHNOLOGIES
    7.
    发明申请
    NANOSENSORS AND RELATED TECHNOLOGIES 审中-公开

    公开(公告)号：WO2008051316A3

    公开(公告)日：2008-05-02

    申请号：PCT/US2007/013700

    申请日：2007-06-11

    Applicant: PRESIDENT AND FELLOWS OF HARVARD COLLEGE ,  LIEBER, Charles, M. ,  FANG, Ying ,  PATOLSKY, Fernando

    Inventor： LIEBER, Charles, M. ,  FANG, Ying ,  PATOLSKY, Fernando

    IPC: C12Q1/68 ,  H01L29/06

    Abstract: The present invention generally relates to nanotechnology and sub-microelectronic circuitry, as well as associated methods and devices, for example, nanoscale wire devices and methods for use in determining nucleic acids or other analytes suspected to be present in a sample (for example, their presence and/or dynamical information), e.g., at the single molecule level. For example, a nanoscale wire device can be used in some cases to detect single base mismatches within a nucleic acid (e.g., by determining association and/or dissociation rates). In one aspect, dynamical information such as a binding constant, an association rate, and/or a dissociation rate, can be determined between a nucleic acid or other analyte, and a binding partner immobilized relative to a nanoscale wire. In some cases, the nanoscale wire includes a first portion comprising a metal-semiconductor compound, and a second portion that does not include a metal-semiconductor compound. The binding partner, in some embodiments, is immobilized relative to at least the second portion of the nanoscale wire, and the size of the second portion of the nanoscale wire may be minimized and/or controlled in some instances. Articles and devices of size greater than the nanoscale are also included in certain embodiments. Still other aspects of the invention include assays, sensors, kits, and/or other devices that include such nanoscale wires, methods of making and/or using such nanoscale wires, or the like.

    NANOSTRUCTURES CONTAINING METAL-SEMICONDUCTOR COMPOUNDS
    8.
    发明申请
    NANOSTRUCTURES CONTAINING METAL-SEMICONDUCTOR COMPOUNDS 审中-公开
    包含金属半导体化合物的纳米结构

    公开(公告)号：WO2005093831A1

    公开(公告)日：2005-10-06

    申请号：PCT/US2005/004459

    申请日：2005-02-14

    Applicant: PRESIDENT AND FELLOWS OF HARVARD COLLEGE ,  LIEBER, Charles, M. ,  WU, Yue ,  XIANG, Jie ,  YANG, Chen ,  LU, Wei

    Inventor： LIEBER, Charles, M. ,  WU, Yue ,  XIANG, Jie ,  YANG, Chen ,  LU, Wei

    IPC: H01L23/49

    CPC classification number: B82Y30/00 ,  B82Y10/00 ,  H01L29/0673 ,  H01L29/068 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: The present invention generally relates to devices and components for use in nanotechnology and sub-microelectronic circuitry that include metal-semiconductor compounds such as metal silicides. The present invention also, in some embodiments, provides methods of forming such devices and components by allowing a first material to diffuse into a second material, optionally creating a new compound. Thus, as an example, metal atoms are allowed to diffuse into a semiconductor to create the metal-semiconductor compound. In some cases, the device may include a component that is a single crystal. Certain metal-semiconductor compounds of the invention have novel physical/electrical properties, for example, low resistivities, high conductivities, high current density capacities, and the like. In some embodiments, a component of the invention may have two or more regions that differ in composition, where one or both of the regions can include a metal-semiconductor compound. In some cases, the regions may be created by using a mask or a nanoscale wire to define the two or more regions.

    Abstract translation: 本发明一般涉及用于纳米技术的器件和组件，以及包括诸如金属硅化物的金属 - 半导体化合物的亚微电子电路。 在一些实施方案中，本发明还提供了通过允许第一材料扩散到第二材料中，任选地产生新化合物来形成这种装置和组分的方法。 因此，作为示例，允许金属原子扩散到半导体中以形成金属 - 半导体化合物。 在一些情况下，该装置可以包括作为单晶的部件。 本发明的某些金属 - 半导体化合物具有新的物理/电学性质，例如低电阻率，高电导率，高电流密度容量等。 在一些实施方案中，本发明的组分可以具有两个或更多个组成不同的区域，其中一个或两个区域可以包括金属 - 半导体化合物。 在一些情况下，可以通过使用掩模或纳米级线来形成区域来限定两个或更多个区域。

    DOPED NANOSCALE WIRES AND METHOD OF MANUFACTURE
    9.
    发明申请
    DOPED NANOSCALE WIRES AND METHOD OF MANUFACTURE 审中-公开

    公开(公告)号：WO2004038767A3

    公开(公告)日：2004-05-06

    申请号：PCT/US2003/022061

    申请日：2003-07-16

    Applicant: PRESIDENT AND FELLOWS OF HARVARD COLLEGE

    Inventor： LIEBER, Charles, M. ,  LAUHON, Lincoln, J. ,  GUDIKSEN, Mark, S. ,  WANG, Deli

    IPC: B82B3/00

    Abstract: The present invention relates generally to sub-microelectronic circuitry, and more particularly to nanometer-scale articles, including nanoscale wires which can be selectively doped at various locations and at various levels. In some cases, the articles may be single crystals. The nanoscale wires can be doped, for example, differentially along their length, or radially, and either in terms of identity of dopant, concentration of dopant, or both. This may be used to provide both n-type and p-type conductivity in a single item, or in different items in close proximity to each other, such as in a crossbar array. The fabrication and growth of such articles is described, and the arrangement of such articles to fabricate electronic, optoelectronic, or spintronic devices and components. For example, semiconductor materials can be doped to form n-type and p-type semiconductor regions for making a variety of devices such as field effect transistors, bipolar transistors, complementary inverters, tunnel diodes, light emitting diodes, sensors, and the like.

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