公开(公告)号：WO2015035043A1

公开(公告)日：2015-03-12

申请号：PCT/US2014/054086

申请日：2014-09-04

Applicant: QUALCOMM INCORPORATED

Inventor： ZHU, Xiaochun ,  MILLENDORF, Steven M. ,  GUO, Xu ,  JACOBSON, David M. ,  LEE, Kangho ,  KANG, Seung H. ,  NOWAK, Matthew Michael

IPC: G11C11/16 ,  H04L9/08 ,  H04L9/32

CPC classification number: G11C11/1673 ,  G09C1/00 ,  G11C11/161 ,  H04L9/0866 ,  H04L9/30 ,  H04L9/3278

Abstract: One feature pertains to a method for implementing a physically unclonable function (PUF). The method includes providing an array of magnetoresistive random access memory (MRAM) cells, where the MRAM cells are each configured to represent one of a first logical state and a second logical state. The array of MRAM cells are un-annealed and free from exposure to an external magnetic field oriented in a direction configured to initialize the MRAM cells to a single logical state of the first and second logical states. Consequently, each MRAM cell has a random initial logical state of the first and second logical states. The method further includes sending a challenge to the MRAM cell array that reads logical states of select MRAM cells of the array, and obtaining a response to the challenge from the MRAM cell array that includes the logical states of the selected MRAM cells of the array.

Abstract translation: 一个特征涉及用于实现物理不可克隆功能（PUF）的方法。 该方法包括提供磁阻随机存取存储器（MRAM）单元的阵列，其中MRAM单元被配置为表示第一逻辑状态和第二逻辑状态之一。 MRAM单元的阵列是未退火的，并且没有暴露于被配置为将MRAM单元初始化的方向定向到第一和第二逻辑状态的单个逻辑状态的外部磁场。 因此，每个MRAM单元具有第一和第二逻辑状态的随机初始逻辑状态。 该方法还包括向MRAM单元阵列发送挑战，该MRAM单元阵列读取阵列的选择MRAM单元的逻辑状态，以及从包括阵列的所选MRAM单元的逻辑状态的MRAM单元阵列获得对挑战的响应。

公开(公告)号：WO2015035049A1

公开(公告)日：2015-03-12

申请号：PCT/US2014/054096

申请日：2014-09-04

Applicant: QUALCOMM INCORPORATED

Inventor： ZHU, Xiaochun ,  MILLENDORF, Steven M. ,  GUO, Xu ,  JACOBSON, David M. ,  LEE, Kangho ,  KANG, Seung H. ,  NOWAK, Matthew Michael

IPC: G11C11/16 ,  H04L9/08 ,  H04L9/32

CPC classification number: G11C11/1675 ,  G11C11/161 ,  G11C11/1695 ,  H04L9/0866 ,  H04L9/30 ,  H04L9/3278

Abstract: One feature pertains to a method of implementing a physically unclonable function (PUF). The method includes exposing an array of magnetoresistive random access memory (MRAM) cells to an orthogonal external magnetic field. The MRAM cells are each configured to represent one of a first logical state and a second logical state, and the orthogonal external magnetic field is oriented in an orthogonal direction to an easy axis of a free layer of the MRAM cells to place the MRAM cells in a neutral logical state that is not the first logical state or the second logical state. The method further includes removing the orthogonal external magnetic field to place each of the MRAM cells of the array randomly in either the first logical state or the second logical state.

Abstract translation: 一个特征涉及实现物理不可克隆功能（PUF）的方法。 该方法包括将磁阻随机存取存储器（MRAM）阵列阵列暴露于正交外部磁场。 MRAM单元各自被配置为表示第一逻辑状态和第二逻辑状态之一，并且正交外部磁场定向为与MRAM单元的自由层的容易轴正交的方向，以将MRAM单元置于 不是第一逻辑状态或第二逻辑状态的中性逻辑状态。 该方法还包括去除正交的外部磁场，将阵列的每个MRAM单元随机地置于第一逻辑状态或第二逻辑状态中。

公开(公告)号：WO2013043543A2

公开(公告)日：2013-03-28

申请号：PCT/US2012/055785

申请日：2012-09-17

Applicant: QUALCOMM Incorporated ,  JACOBSON, David M. ,  ZHU, Xiaochun ,  WU, Wenqing ,  YUEN, Kendrick Hoy Leong ,  KANG, Seung H.

Inventor： JACOBSON, David M. ,  ZHU, Xiaochun ,  WU, Wenqing ,  YUEN, Kendrick Hoy Leong ,  KANG, Seung H.

IPC: G06F7/58

CPC classification number: G06F7/588 ,  G06F5/01 ,  G06F2205/00 ,  G06F2207/581 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1695 ,  G11C11/1697 ,  H03M7/30

Abstract: An entropy source and a random number (RN) generator are disclosed. In one aspect, a low-energy entropy source includes a magneto-resistive (MR) element and a sensing circuit. The MR element is applied a static current and has a variable resistance determined based on magnetization of the MR element. The sensing circuit senses the resistance of the MR element and provides random values based on the sensed resistance of the MR element. In another aspect, a RN generator includes an entropy source and a post-processing module. The entropy source includes at least one MR element and provides first random values based on the at least one MR element. The post-processing module receives and processes the first random values (e.g., based on a cryptographic hash function, an error detection code, a stream cipher algorithm, etc.) and provides second random values having improved randomness characteristics.

Abstract translation: 公开了熵源和随机数（RN）生成器。 一方面，低能量熵源包括磁阻（MR）元件和感测电路。 MR元件施加静态电流，并具有基于MR元件的磁化确定的可变电阻。 感测电路感测MR元件的电阻，并根据检测到的MR元件的电阻提供随机值。 另一方面，RN发生器包括熵源和后处理模块。 熵源包括至少一个MR元素，并且基于至少一个MR元素提供第一随机值。 后处理模块接收并处理第一随机值（例如，基于加密散列函数，错误检测码，流密码算法等）并提供具有改进的随机特性的第二随机值。

公开(公告)号：WO2014062705A1

公开(公告)日：2014-04-24

申请号：PCT/US2013/065091

申请日：2013-10-15

Applicant: QUALCOMM INCORPORATED

Inventor： LEE, Kangho ,  KIM, Taehyun ,  ZHU, Xiaochun ,  JACOBSON, David M. ,  MADALA, Raghu Sagar ,  WU, Wenqing ,  KIM, Jung Pill ,  KANG, Seung H.

IPC: G06F7/58

CPC classification number: G06F7/588

Abstract: A random number generator system that utilizes a magnetic tunnel junction (MTJ) that is controlled by an STT-MTJ entropy controller that determines whether to proceed with generating random numbers or not by monitoring the health of the MTJ-based random number generator is illustrated. If the health of the random number generation is above a threshold, the STT-MTJ entropy controller shuts down the MTJ-based random number generator and sends a message to a requesting chipset that a secure key generation is not possible. If the health of the random number generation is below a threshold, the entropy controller allows the MTJ-based random number generator to generate random numbers based on a specified algorithm, the output of which is post processed and used by a cryptographic-quality deterministic random bit generator to generate a security key for a requesting chipset.

Abstract translation: 示出了利用由STT-MTJ熵控制器控制的磁隧道结（MTJ）的随机数发生器系统，其通过监测基于MTJ的随机数发生器的健康来确定是否继续生成随机数。 如果随机数生成的健康状况高于阈值，则STT-MTJ熵控制器关闭基于MTJ的随机数生成器，并且向请求芯片组发送消息，即不可能产生安全密钥。 如果随机数生成的健康状况低于阈值，则熵控制器允许基于MTJ的随机数发生器基于指定的算法产生随机数，其输出被后处理并由加密质量确定性随机使用 以产生请求芯片组的安全密钥。

公开(公告)号：WO2014039573A1

公开(公告)日：2014-03-13

申请号：PCT/US2013/058083

申请日：2013-09-04

Applicant: QUALCOMM INCORPORATED

Inventor： ZHU, Xiaochu ,  WU, Wenqing ,  JACOBSON, David M. ,  KANG, Seung H. ,  YUEN, Kendrick H.

IPC: G06F7/58

CPC classification number: G06F7/582 ,  G06F7/588

Abstract: Embodiments of the disclosure are directed to generating a random number. An embodiment of the disclosure passes a current (210; 510; 610; 1010) from a read operation (202; 502; 602; 1002) through a magnetic tunnel junction (MTJ) (200; 500; 600; 700a; 700b; 1000) to cause a first magnetization orientation of a free layer (204; 504; 604; 704; 1004) to switch to a second magnetization orientation, the switch in magnetization orientation causing a change in a resistance of the MTJ, and periodically samples the resistance of the MTJ to generate a bit value for the random number.

Abstract translation: 本公开的实施例涉及生成随机数。 本公开的一个实施例将来自读取操作（202; 502; 602; 1002）的电流（210; 510; 610; 1010）通过磁性隧道结（MTJ）（200; 500; 600; 700a; 700b; 1000 ）引起自由层（204; 504; 604; 704; 1004）的第一磁化取向切换到第二磁化取向，磁化方向上的开关引起MTJ的电阻的变化，并周期性地对电阻进行采样 的MTJ来生成随机数的位值。

公开(公告)号：WO2015035033A1

公开(公告)日：2015-03-12

申请号：PCT/US2014/054073

申请日：2014-09-04

Applicant: QUALCOMM INCORPORATED

Inventor： ZHU, Xiaochun ,  MILLENDORF, Steven M. ,  GUO, Xu ,  JACOBSON, David M. ,  LEE, Kangho ,  KANG, Seung H. ,  NOWAK, Matthew Michael

IPC: G11C11/16 ,  H04L9/08 ,  H04L9/32

CPC classification number: G11C11/1695 ,  G09C1/00 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  H04L9/0866 ,  H04L9/3278 ,  H04L2209/12

Abstract: One feature pertains to a method of implementing a physically unclonable function. The method includes initializing an array of magnetoresistive random-access memory (MRAM) cells to a first logical state, where each of the MRAM cells have a random transition voltage that is greater than a first voltage and less than a second voltage. The transition voltage represents a voltage level that causes the MRAM cells to transition from the first logical state to a second logical state. The method further includes applying a programming signal voltage to each of the MRAM cells of the array to cause at least a portion of the MRAM cells of the array to randomly change state from the first logical state to the second logical state, where the programming signal voltage is greater than the first voltage and less than the second voltage.

Abstract translation: 一个特征涉及实现物理上不可克隆功能的方法。 该方法包括将磁阻随机存取存储器（MRAM）单元的阵列初始化为第一逻辑状态，其中每个MRAM单元具有大于第一电压且小于第二电压的随机转变电压。 转换电压表示使MRAM单元从第一逻辑状态转换到第二逻辑状态的电压电平。 该方法还包括将编程信号电压施加到阵列的每个MRAM单元，以使阵列的MRAM单元的至少一部分随机地将状态从第一逻辑状态改变到第二逻辑状态，其中编程信号 电压大于第一电压且小于第二电压。

公开(公告)号：WO2014043392A1

公开(公告)日：2014-03-20

申请号：PCT/US2013/059524

申请日：2013-09-12

Applicant: QUALCOMM INCORPORATED

Inventor： JACOBSON, David M. ,  BRUMLEY, Billy B.

IPC: H04L29/06 ,  H04L9/00 ,  H04W12/02 ,  H04W28/06

CPC classification number: H04L9/3242 ,  H04L9/002 ,  H04L9/3223 ,  H04L9/3239 ,  H04L63/0428 ,  H04L63/123 ,  H04L63/1475 ,  H04L63/166 ,  H04L69/04 ,  H04L2209/16 ,  H04L2209/20 ,  H04L2209/24 ,  H04L2209/30 ,  H04W12/02 ,  H04W28/06

Abstract: Disclosed is a method for protecting message data. In the method, the message data is padded with padding bits generated based on a deterministic function performed on the message data. The padded message data is compressed to generate compressed data. A length of the compressed data is dependent on the padding bits. The compressed data is encrypted to generate encrypted message data.

Abstract translation: 公开了一种保护消息数据的方法。 在该方法中，消息数据被填充有基于对消息数据执行的确定性功能而生成的填充位。 填充的消息数据被压缩以生成压缩数据。 压缩数据的长度取决于填充位。 压缩的数据被加密以生成加密的消息数据。

公开(公告)号：WO2015035037A1

公开(公告)日：2015-03-12

申请号：PCT/US2014/054078

申请日：2014-09-04

Applicant: QUALCOMM INCORPORATED

Inventor： ZHU, Xiaochun ,  MILLENDORF, Steven M. ,  GUO, Xu ,  JACOBSON, David M. ,  LEE, Kangho ,  KANG, Seung H. ,  NOWAK, Matthew Michael

IPC: G11C11/16 ,  H04L9/08 ,  H04L9/32 ,  G11C17/02

CPC classification number: G06F21/70 ,  G06F1/26 ,  G09C1/00 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/1695 ,  G11C17/02 ,  G11C17/14 ,  H04L9/0866 ,  H04L9/3278 ,  H04L2209/12

Abstract: One feature pertains to a method of implementing a physically unclonable function that includes providing an array of metal-insulator-metal (MIM) devices, where the MIM devices are configured to represent a first resistance state or a second resistance state and a plurality of the MIM devices are initially at the first resistance state. The MIM devices have a random breakdown voltage that is greater than a first voltage and less than a second voltage, where the breakdown voltage represents a voltage that causes the MIM devices to transition from the first resistance state to the second resistance state. The method further includes applying a signal line voltage to the MIM devices to cause a portion of the MIM devices to randomly breakdown and transition from the first resistance state to the second resistance state, the signal line voltage greater than the first voltage and less than the second voltage.

Abstract translation: 一个特征涉及实现物理上不可克隆的功能的方法，其包括提供金属 - 绝缘体 - 金属（MIM）器件的阵列，其中MIM器件被配置为表示第一电阻状态或第二电阻状态，并且多个 MIM器件最初处于第一电阻状态。 MIM器件具有大于第一电压且小于第二电压的随机击穿电压，其中击穿电压表示使MIM器件从第一电阻状态转变到第二电阻状态的电压。 该方法还包括向MIM器件施加信号线电压以使MIM器件的一部分随机击穿并从第一电阻状态转变到第二电阻状态，信号线电压大于第一电压并小于 第二电压。

公开(公告)号：WO2015026838A1

公开(公告)日：2015-02-26

申请号：PCT/US2014/051718

申请日：2014-08-19

Applicant: QUALCOMM INCORPORATED

Inventor： GUO, Xu ,  JACOBSON, David M. ,  YANG, Yafei ,  DREW, Adam J. ,  ROSENBERG, Brain Marc

IPC: G06F7/58 ,  H04L9/32

CPC classification number: H04L9/3278 ,  G06F7/588 ,  H04L63/08 ,  H04L63/0853 ,  H04L63/0876 ,  H04L63/0884

Abstract: One feature pertains to generating a unique identifier for an electronic device by combining static random access memory (SRAM) PUFs and circuit delay based PUFs (e.g., ring oscillator (RO) PUFs, arbiter PUFs, etc.). The circuit delay based PUFs may be used to conceal either a challenge to, and/or response from, the SRAM PUFs, thereby inhibiting an attacker from being able to clone a memory devices response.

Abstract translation: 一个特征涉及通过组合静态随机存取存储器（SRAM）PUF和基于电路延迟的PUF（例如，环形振荡器（RO）PUF，仲裁器PUF等）来为电子设备生成唯一的标识符。 基于电路延迟的PUF可以用于隐藏对SRAM PUF的挑战和/或响应，从而阻止攻击者克隆存储器件响应。