公开(公告)号：WO2015085093A1

公开(公告)日：2015-06-11

申请号：PCT/US2014/068624

申请日：2014-12-04

Applicant: RAMBUS INC.

Inventor： SEKAR, Deepak, Chandra ,  ELLIS, Wayne, Frederick ,  HAUKNESS, Brent, Steven ,  BRONNER, Gary, Bela ,  VOGELSANG, Thomas

IPC: G11C13/00

CPC classification number: G11C13/0069 ,  G11C13/0002 ,  G11C13/0023 ,  G11C13/0028 ,  G11C13/003 ,  G11C13/004 ,  G11C2013/0083 ,  G11C2013/0088 ,  G11C2213/74 ,  G11C2213/79 ,  G11C2213/82

Abstract: A memory device includes a plurality of resistive memory cells and a plurality of word lines. Each resistive memory cell includes a resistive memory element, a first switching element electrically coupled in series with the resistive memory element, and a second switching element electrically coupled in series with the first switching element. The first switching element and the second switching element in each resistive memory cell is coupled to different ones of the word lines.

Abstract translation: 存储器件包括多个电阻存储器单元和多个字线。 每个电阻性存储单元包括电阻性存储器元件，与电阻性存储元件串联电耦合的第一开关元件，以及与第一开关元件串联电耦合的第二开关元件。 每个电阻存储单元中的第一开关元件和第二开关元件耦合到不同的字线。