SIMULTANEOUS AND SELECTIVE WIDE GAP PARTITIONING OF VIA STRUCTURES USING PLATING RESIST
    3.
    发明申请
    SIMULTANEOUS AND SELECTIVE WIDE GAP PARTITIONING OF VIA STRUCTURES USING PLATING RESIST 审中-公开
    通过使用耐蚀材料的结构同时选择性的宽带划分

    公开(公告)号:WO2014145387A3

    公开(公告)日:2015-01-29

    申请号:PCT/US2014030144

    申请日:2014-03-17

    Applicant: SANMINA CORP

    Abstract: A multilayer printed circuit board is provided having a first dielectric layer and a first plating resist selectively positioned in the first dielectric layer. A second plating resist may be selectively positioned in the first dielectric layer or a second dielectric layer, the second plating resist separate from the first plating resist. A through hole extends through the first dielectric layer, the first plating resist, and the second plating resist. An interior surface of the through hole is plated with a conductive material except along a length between the first plating resist and the second plating resist. This forms a partitioned plated through hole having a first via segment electrically isolated from a second via segment.

    Abstract translation: 提供了具有选择性地定位在第一介电层中的第一电介质层和第一电镀抗蚀剂的多层印刷电路板。 可以将第二电镀抗蚀剂选择性地定位在第一电介质层或第二电介质层中,第二电镀抗蚀剂与第一电镀抗蚀剂分离。 通孔延伸穿过第一电介质层,第一电镀抗蚀剂和第二电镀抗蚀剂。 除了沿第一电镀抗蚀剂和第二电镀抗蚀剂之间的长度之外,通孔的内表面镀有导电材料。 这形成了具有与第二通孔段电隔离的第一通路段的分隔电镀通孔。

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