公开(公告)号：WO2017192432A1

公开(公告)日：2017-11-09

申请号：PCT/US2017/030363

申请日：2017-05-01

Applicant: SILICET, LLC

Inventor： DOLNY, Gary, M. ,  RICHARDS, Jr. William, R. ,  MILANOWSKI, Randall

IPC: H01L29/47 ,  H01L29/66 ,  H01L29/78 ,  H01L29/08

CPC classification number: H01L29/7839 ,  H01L21/28518 ,  H01L21/28537 ,  H01L29/4236 ,  H01L29/42376 ,  H01L29/47 ,  H01L29/665 ,  H01L29/66681 ,  H01L29/66689 ,  H01L29/7813 ,  H01L29/7816 ,  H01L29/7825 ,  H01L29/7835

Abstract: Devices, structures, and methods thereof for providing a Schottky or Schottky-like contact as a source region and/or a drain region of a power transistor are disclosed. A power transistor structure comprises a substrate of a first dopant polarity, a drift region formed on or within the substrate, a body region formed on or within the drift region, a gate structure formed on or within the substrate, a source region adjacent to the gate structure, a drain region formed adjacent to the gate structure. At least one of the source region and the drain region is formed from a Schottky or Schottky-like contact substantially near a surface of the substrate, comprising a silicide layer and an interfacial dopant segregation layer. The Schottky or Schottky-like contact is formed by low-temperature annealing a dopant segregation implant in the source and/or drain region.

Abstract translation: 公开了用于提供肖特基或类肖特基接触作为功率晶体管的源极区和/或漏极区的器件，结构及其方法。 功率晶体管结构包括具有第一掺杂剂极性的衬底，形成在衬底上或衬底内的漂移区，形成在漂移区上或内的本体区，形成在衬底上或衬底内的栅极结构， 栅极结构，与栅极结构相邻形成的漏极区域。 源极区和漏极区中的至少一个由肖特基或类肖特基接触形成，基本上接近衬底的表面，包括硅化物层和界面掺杂物偏析层。 肖特基或类肖特基接触通过在源极和/或漏极区域中低温退火掺杂剂偏析注入而形成。