IMAGE SENSOR WITH NANOSTRUCTURE-BASED CAPACITORS

    公开(公告)号:WO2021262067A1

    公开(公告)日:2021-12-30

    申请号:PCT/SE2021/050582

    申请日:2021-06-15

    Applicant: SMOLTEK AB

    Abstract: An image sensor comprising an image sensor layer having a plurality of image sensor layer contact pads; and a plurality of photo-sensitive elements, each being coupled to a respective image sensor layer contact pad; and a capacitor layer having: a plurality of first capacitor contact structures, each being constituted by a capacitor layer top contact pad bonded to a respective image sensor layer contact pad of the image sensor layer; a plurality of second capacitor contact structures; and a plurality of capacitors, embedded in a first dielectric material, each capacitor including at least one electrically conductive vertical nanostructure electrically conductively connected to one of a respective first capacitor contact structure and a respective second capacitor contact structure, and conductively separated from the other one of the respective first capacitor contact structure and the respective second capacitor contact structure by a layer of a second dielectric material.

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