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1.发明申请
公开(公告)号：WO2018022154A3
公开(公告)日：2018-02-01
申请号：PCT/US2017/029180
申请日：2017-04-24
Applicant: STC. UNM
Inventor： BRUECK, Steven, R.J. , FEEZELL, Daniel , RANDALL, John , BUSANI, Tito , BALLARD, Joshua, B. , BEHZADIRAD, Mahmoud , RISHINARAMANGALAM, Ashwin Krishnan
Abstract: Provided is a composite metal-wide-bandgap semiconductor tip for scanning tunneling microscopy and/or scanning, tunneling lithography, a method of forming, and a method for using the composite metal-wide-bandgap semiconductor tip.
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2.发明申请
公开(公告)号：WO2018022154A2
公开(公告)日：2018-02-01
申请号：PCT/US2017/029180
申请日：2017-04-24
Applicant: STC. UNM
Inventor： BRUECK, Steven, R.J. , FEEZELL, Daniel , RANDALL, John , BUSANI, Tito , BALLARD, Joshua, B. , BEHZADIRAD, Mahmoud , RISHINARAMANGALAM, Ashwin Krishnan
CPC classification number: G01Q60/16 , B82B3/0004 , G01Q70/06 , G01Q70/14 , G01Q80/00 , G03F7/0002
Abstract: Provided is a composite metal-wide-bandgap semiconductor tip for scanning tunneling microscopy and/or scanning, tunneling lithography, a method of forming, and a method for using the composite metal-wide-bandgap semiconductor tip.
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3.发明申请RUGGED, SINGLE CRYSTAL WIDE-BAND-GAP-MATERIAL-SCANNING-TUNNELING MICROSCOPY/LITHOGRAPHY TIPS 审中-公开坚固的单晶宽带隙缝材料扫描隧道显微镜/光刻技术
公开(公告)号：WO2018022154A9
公开(公告)日：2018-02-01
申请号：PCT/US2017/029180
申请日：2017-04-24
Applicant: STC. UNM
Inventor： BRUECK, Steven, R.J. , FEEZELL, Daniel , RANDALL, John , BUSANI, Tito , BALLARD, Joshua, B. , BEHZADIRAD, Mahmoud , RISHINARAMANGALAM, Ashwin Krishnan
Abstract: Provided is a composite metal-wide-bandgap semiconductor tip for scanning tunneling microscopy and/or scanning, tunneling lithography, a method of forming, and a method for using the composite metal-wide-bandgap semiconductor tip.
Abstract translation: 提供了一种用于扫描隧道显微镜和/或扫描的复合金属宽带隙半导体尖端，隧穿光刻，形成方法以及使用该复合金属宽带隙半导体尖端的方法
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