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1.发明申请
公开(公告)号：WO2018022154A3
公开(公告)日：2018-02-01
申请号：PCT/US2017/029180
申请日：2017-04-24
Applicant: STC. UNM
Inventor： BRUECK, Steven, R.J. , FEEZELL, Daniel , RANDALL, John , BUSANI, Tito , BALLARD, Joshua, B. , BEHZADIRAD, Mahmoud , RISHINARAMANGALAM, Ashwin Krishnan
Abstract: Provided is a composite metal-wide-bandgap semiconductor tip for scanning tunneling microscopy and/or scanning, tunneling lithography, a method of forming, and a method for using the composite metal-wide-bandgap semiconductor tip.
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2.发明申请RUGGED, SINGLE CRYSTAL WIDE-BAND-GAP-MATERIAL-SCANNING-TUNNELING MICROSCOPY/LITHOGRAPHY TIPS 审中-公开坚固的单晶宽带隙缝材料扫描隧道显微镜/光刻技术
公开(公告)号：WO2018022154A9
公开(公告)日：2018-02-01
申请号：PCT/US2017/029180
申请日：2017-04-24
Applicant: STC. UNM
Inventor： BRUECK, Steven, R.J. , FEEZELL, Daniel , RANDALL, John , BUSANI, Tito , BALLARD, Joshua, B. , BEHZADIRAD, Mahmoud , RISHINARAMANGALAM, Ashwin Krishnan
Abstract: Provided is a composite metal-wide-bandgap semiconductor tip for scanning tunneling microscopy and/or scanning, tunneling lithography, a method of forming, and a method for using the composite metal-wide-bandgap semiconductor tip.
Abstract translation: 提供了一种用于扫描隧道显微镜和/或扫描的复合金属宽带隙半导体尖端，隧穿光刻，形成方法以及使用该复合金属宽带隙半导体尖端的方法
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3.发明申请
公开(公告)号：WO2018022154A2
公开(公告)日：2018-02-01
申请号：PCT/US2017/029180
申请日：2017-04-24
Applicant: STC. UNM
Inventor： BRUECK, Steven, R.J. , FEEZELL, Daniel , RANDALL, John , BUSANI, Tito , BALLARD, Joshua, B. , BEHZADIRAD, Mahmoud , RISHINARAMANGALAM, Ashwin Krishnan
CPC classification number: G01Q60/16 , B82B3/0004 , G01Q70/06 , G01Q70/14 , G01Q80/00 , G03F7/0002
Abstract: Provided is a composite metal-wide-bandgap semiconductor tip for scanning tunneling microscopy and/or scanning, tunneling lithography, a method of forming, and a method for using the composite metal-wide-bandgap semiconductor tip.
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4.发明申请
公开(公告)号：WO2018102439A1
公开(公告)日：2018-06-07
申请号：PCT/US2017/063754
申请日：2017-11-29
Applicant: STC. UNM
Inventor： BUSANA, Tito , BRUECK, Steven R.J. , FEEZELL, Daniel , BEHZADIRAD, Mahmoud
CPC classification number: G01Q70/12 , G01Q60/06 , G01Q60/38 , H01L21/02458 , H01L21/0254 , H01L21/02603 , H01L21/0262 , H01L21/02639 , H01L21/02645
Abstract: Nanowires that may be utilized in microscopy, for example atomic force microscopy (AFM), as part of an AFM probe, as well as for other uses, are disclosed. The nanowires may be formed from a Group III nitride such as an epitaxial layer that may be or include gallium nitride, indium nitride, aluminum nitride, and an alloy of these materials. During use of the AFM probe to measure a topography of a test sample surface, the nanowire can activated and caused to lase and emit a light, thereby illuminating the surface with the light. In an implementation, the light can be collected by the AFM probe itself, for example through an optical fiber to which the nanowire is attached.
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