公开(公告)号：WO2018160461A1

公开(公告)日：2018-09-07

申请号：PCT/US2018/019476

申请日：2018-02-23

Applicant: VEECO PRECISION SURFACE PROCESSING LLC

Inventor： MAUER, Laura ,  TADDEI, John ,  CLARK, John ,  NULMAN, Kenji

IPC: H01L21/00

Abstract: A system and method are provided for etching semiconductor wafers (integrated circuit substrates) with advanced packaging using a two-step wet etching process. The first etch step uses an etchant that is non-selective to at least the wafer material (silicon) and metals, such as copper and titanium, that are present in the wafer. The second etch step uses an etchant that is selective to the wafer material (silicon) and has low selectivity for the metals, thereby leaving them at least substantially intact.

公开(公告)号：WO2017176641A1

公开(公告)日：2017-10-12

申请号：PCT/US2017/025768

申请日：2017-04-03

Applicant: VEECO PRECISION SURFACE PROCESSING LLC

Inventor： MAUER, Laura ,  TADDEI, John ,  SWALLOW, James ,  GOLBERG, David ,  ZWIRNMANN, Eric, Kurt

IPC: C03C25/68 ,  C23F1/00

Abstract: An apparatus and method are provided to: determine a unique profile to etch each wafer, execute that etch, and determine and deliver the proper chemical addition in order to maintain etch rate within tight tolerances.

Abstract translation: 提供了一种设备和方法，以：确定用于蚀刻每个晶片的独特轮廓，执行该蚀刻，并且确定和递送适当的化学添加以便将蚀刻速率维持在严格的公差内。

公开(公告)号：WO2016160567A1

公开(公告)日：2016-10-06

申请号：PCT/US2016/024204

申请日：2016-03-25

Applicant: VEECO PRECISION SURFACE PROCESSING LLC

Inventor： TADDEI, John ,  CLARK, John ,  YANNUZZI, Mark ,  MAUER, Laura ,  VIT, Paul

IPC: B08B3/04 ,  B01F15/04 ,  G05D11/02 ,  G05D11/08

CPC classification number: B01F15/0022 ,  B01F3/0865 ,  B01F3/088 ,  B01F3/2078 ,  B01F15/00175 ,  B01F15/00344 ,  B01F15/00993 ,  B01F15/0429

Abstract: An apparatus and method for mixing fluids with degradational properties are disclosed herein. The present system has been devised to safely and accurately dilute, heat and deliver a degradable fluid while simultaneously removing extraneous vapor, adding capability to monitor the temperature and capability to monitor the concentration of the diluted fluid.

Abstract translation: 本文公开了一种用于混合具有降解性质的流体的装置和方法。 本系统被设计成安全准确地稀释，加热和输送可降解流体，同时除去外来蒸气，增加监测温度的能力和监测稀释液体浓度的能力。

公开(公告)号：WO2016070036A1

公开(公告)日：2016-05-06

申请号：PCT/US2015/058302

申请日：2015-10-30

Applicant: VEECO PRECISION SURFACE PROCESSING LLC

Inventor： MAUER, Laura ,  TADDEI, John ,  CLARK, John ,  LAWRENCE, Elena ,  ZWIMMANN, Eric, Kurt ,  GOLDBERG, David, A. ,  YUTKOWITZ, Jonathan

IPC: H01L21/67 ,  H01L21/66 ,  G01N21/55

CPC classification number: H01L22/12 ,  H01L21/02057 ,  H01L21/30604 ,  H01L21/30608 ,  H01L21/67046 ,  H01L21/6708 ,  H01L21/76898 ,  H01L22/20

Abstract: A system and method for performing a wet etching process is disclosed. The system includes multiple processing stations accessible by a transfer device, including a measuring station to optically measure the thickness of a wafer before and after each etching steps in the process. The system also includes a controller to analyze the thickness measurements in view of a target wafer profile and generate an etch recipe, dynamically and in real time, for each etching step. In addition, the process controller can cause a single wafer wet etching station to etch the wafer according to the generated etching recipes. In addition, the system can, based on the pre and post-etch thickness measurements and target etch profile, generate and/or refine the etch recipes.

Abstract translation: 公开了一种用于执行湿蚀刻工艺的系统和方法。 该系统包括可由传送装置访问的多个处理站，包括在该过程中每个蚀刻步骤之前和之后光学测量晶片的厚度的测量站。 该系统还包括控制器，用于根据目标晶片轮廓分析厚度测量值，并为每个蚀刻步骤动态地并且实时地产生蚀刻配方。 此外，过程控制器可以使单个晶片湿蚀刻工位根据生成的蚀刻配方来蚀刻晶片。 此外，该系统可以基于蚀刻前和蚀刻前厚度测量和目标蚀刻轮廓，生成和/或细化蚀刻配方。