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    APPARATUS AND METHOD TO REDUCE AND CONTROL RESISTIVITY OF DEIONIZED WATER
    1.
    发明申请
    APPARATUS AND METHOD TO REDUCE AND CONTROL RESISTIVITY OF DEIONIZED WATER 审中-公开
    降低和控制污染水电阻的装置和方法

    公开(公告)号：WO2016081106A1

    公开(公告)日：2016-05-26

    申请号：PCT/US2015/055812

    申请日：2015-10-15

    Applicant: VEECO PRECISION SURFACE PROCESSING LLC

    Inventor： TADDEI, John ,  YUTKOWITZ, Jonathan

    IPC: C02F1/00 ,  C02F1/66 ,  C02F1/68 ,  C02F1/72

    CPC classification number: C02F1/68 ,  C02F2209/005 ,  C02F2209/03 ,  C02F2209/05

    Abstract: An apparatus and method to convert high resistivity (18 MOhm/cm) deionized water into lower resistivity deionized water with a tight resistivity range. The apparatus is diminished in size to require less space, has an improved sensitivity resistivity probe to permit a lower operating range, an increased communication rate with updated control logic to permit holding tighter tolerances. The method is environmentally friendly in that it replaces the use of harsh chemistries and eliminates the generation of hazardous waste.

    Abstract translation: 将高电阻率（18MOhm / cm）去离子水转换成电阻率较低的去离子水的设备和方法。 该装置的尺寸减小以需要更少的空间，具有改进的灵敏度电阻率探​​头以允许较低的操作范围，与更新的控制逻辑增加的通信速率以允许保持更严格的公差。 该方法是环保的，因为它取代了苛刻化学品的使用并消除了危险废物的产生。

    A SYSTEM AND METHOD FOR PERFORMING A WET ETCHING PROCESS
    3.
    发明申请
    A SYSTEM AND METHOD FOR PERFORMING A WET ETCHING PROCESS 审中-公开
    一种执行湿蚀刻过程的系统和方法

    公开(公告)号：WO2016070036A1

    公开(公告)日：2016-05-06

    申请号：PCT/US2015/058302

    申请日：2015-10-30

    Applicant: VEECO PRECISION SURFACE PROCESSING LLC

    Inventor： MAUER, Laura ,  TADDEI, John ,  CLARK, John ,  LAWRENCE, Elena ,  ZWIMMANN, Eric, Kurt ,  GOLDBERG, David, A. ,  YUTKOWITZ, Jonathan

    IPC: H01L21/67 ,  H01L21/66 ,  G01N21/55

    CPC classification number: H01L22/12 ,  H01L21/02057 ,  H01L21/30604 ,  H01L21/30608 ,  H01L21/67046 ,  H01L21/6708 ,  H01L21/76898 ,  H01L22/20

    Abstract: A system and method for performing a wet etching process is disclosed. The system includes multiple processing stations accessible by a transfer device, including a measuring station to optically measure the thickness of a wafer before and after each etching steps in the process. The system also includes a controller to analyze the thickness measurements in view of a target wafer profile and generate an etch recipe, dynamically and in real time, for each etching step. In addition, the process controller can cause a single wafer wet etching station to etch the wafer according to the generated etching recipes. In addition, the system can, based on the pre and post-etch thickness measurements and target etch profile, generate and/or refine the etch recipes.

    Abstract translation: 公开了一种用于执行湿蚀刻工艺的系统和方法。 该系统包括可由传送装置访问的多个处理站，包括在该过程中每个蚀刻步骤之前和之后光学测量晶片的厚度的测量站。 该系统还包括控制器，用于根据目标晶片轮廓分析厚度测量值，并为每个蚀刻步骤动态地并且实时地产生蚀刻配方。 此外，过程控制器可以使单个晶片湿蚀刻工位根据生成的蚀刻配方来蚀刻晶片。 此外，该系统可以基于蚀刻前和蚀刻前厚度测量和目标蚀刻轮廓，生成和/或细化蚀刻配方。

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