公开(公告)号：WO2017075442A1

公开(公告)日：2017-05-04

申请号：PCT/US2016/059454

申请日：2016-10-28

Applicant: WESTERN DIGITAL TECHNOLOGIES, INC.

Inventor： MAIN, Dale Charles ,  KASHYAP, Abhilash Ravi

IPC: G11C16/10 ,  G11C16/34 ,  G11C16/26 ,  G06F12/02

CPC classification number: G11C29/50004 ,  G06F3/0604 ,  G06F3/0647 ,  G06F3/0652 ,  G06F3/0679 ,  G11C11/5628 ,  G11C11/5642 ,  G11C16/08 ,  G11C16/10 ,  G11C16/14 ,  G11C16/16 ,  G11C16/26 ,  G11C16/28 ,  G11C16/3427 ,  G11C29/50016 ,  G11C2029/5004

Abstract: A data storage device includes a solid-state memory including memory cells and a controller that performs a first programming scheme that programs a first subset of the cells to a first voltage state using a first target voltage, programs a second subset to a second voltage state using a second target voltage higher than the first target voltage, programs a third subset to a third voltage state using a third target voltage higher than the second target voltage, and programs a fourth subset to a fourth voltage state using a fourth target voltage higher than the third target voltage. A difference in voltage between the fourth target voltage and the third target voltage may be greater or less than a difference in voltage between the third target voltage and the second target voltage and/or a difference in voltage between the second target voltage and the first target voltage.

Abstract translation: 数据存储装置包括固态存储器，所述固态存储器包括存储器单元和控制器，所述控制器执行使用第一目标电压将单元的第一子集编程到第一电压状态的第一编程方案，编程 使用高于所述第一目标电压的第二目标电压将第二子集切换到第二电压状态，使用高于所述第二目标电压的第三目标电压将第三子集编程到第三电压状态，并且将第四子集编程到第四电压 使用比第三目标电压高的第四目标电压。 第四目标电压与第三目标电压之间的电压差可以大于或小于第三目标电压与第二目标电压之间的电压差和/或第二目标电压与第一目标电压之间的电压差 电压。

公开(公告)号：WO2017053460A1

公开(公告)日：2017-03-30

申请号：PCT/US2016/052928

申请日：2016-09-21

Applicant: WESTERN DIGITAL TECHNOLOGIES, INC.

Inventor： KASHYAP, Abhilash Ravi ,  MAIN, Dale Charles

IPC: G11C16/10 ,  G11C16/34 ,  G11C16/04 ,  G06F3/06

CPC classification number: G06F3/0619 ,  G06F3/0632 ,  G06F3/0679 ,  G11C7/1006 ,  G11C11/5628 ,  G11C11/5642 ,  G11C16/10 ,  G11C16/3427

Abstract: Systems and methods are disclosed for programming data in non-volatile memory arrays. A data storage device includes a solid-state non-volatile memory including a plurality of memory cells and a controller configured to improve data retention or reduce read disturb of at least a portion of the solid-state non-volatile memory at least in part by receiving data to be written to the solid-state non-volatile memory. The controller is further configured to, when a data retention programming mode is set, encode the data using a programming pattern that favors a first programming state over a second programming state, the first programming state being associated with a lower voltage level than the second programming state, and write the encoded data to the solid-state non-volatile memory. When a read disturb programming mode is set, the first programming state is associated with a higher voltage level than the second programming state.

Abstract translation: 公开了用于在非易失性存储器阵列中编程数据的系统和方法。 数据存储设备包括固态非易失性存储器，其包括多个存储器单元，以及控制器，其被配置为至少部分地通过以下方式改进至少一部分固态非易失性存储器的数据保持或减少读取干扰： 接收要写入固态非易失性存储器的数据。 控制器还被配置为当设置数据保留编程模式时，使用在第二编程状态下有利于第一编程状态的编程模式对数据进行编码，所述第一编程状态与比第二编程的低电压电平相关联 状态，并将编码数据写入固态非易失性存储器。 当设置读取干扰编程模式时，第一编程状态与比第二编程状态更高的电压电平相关联。

公开(公告)号：WO2017044339A1

公开(公告)日：2017-03-16

申请号：PCT/US2016/049297

申请日：2016-08-29

Applicant: WESTERN DIGITAL TECHNOLOGIES, INC.

Inventor： STOEV, Kroum S. ,  JENKINS, Dean Mitcham ,  MAIN, Dale Charles

IPC: G11B33/14 ,  G05D23/30 ,  G05D23/19

CPC classification number: H05K1/0212 ,  G11B5/09 ,  G11B5/40 ,  G11B19/046 ,  G11C7/04 ,  G11C16/10 ,  G11C16/3418 ,  G11C16/349 ,  H05K2201/10159

Abstract: Systems and methods are disclosed for managing temperature in a data storage device. A data storage device includes non-volatile solid-state memory, a temperature sensor, a heating device, and a controller. The controller is configured to receive a temperature signal from the temperature sensor indicating a temperature of at least a portion of the data storage device, determine that the temperature is below a first predetermined threshold, activate the heating device to increase the temperature of the at least a portion of the data storage device, and write data associated with a write command to the non-volatile solid-state memory.

Abstract translation: 公开了用于管理数据存储设备中的温度的系统和方法。 数据存储装置包括非易失性固态存储器，温度传感器，加热装置和控制器。 控制器被配置为从温度传感器接收指示数据存储装置的至少一部分的温度的温度信号，确定温度低于第一预定阈值，激活加热装置以增加至少 数据存储设备的一部分，以及与写入命令相关联的数据写入非易失性固态存储器。