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公开(公告)号：WO2019005229A1
公开(公告)日：2019-01-03
申请号：PCT/US2018/022474
申请日：2018-03-14
Applicant: WESTERN DIGITAL TECHNOLOGIES, INC.
Inventor： KIRSHENBAUM, Roi , INBAR, Karin , GOLDENBERG, Idan , YANG, Nian, Niles , ROM, Rami , BAZARSKY, Alexander , NAVON, Ariel , REUSSWIG, Philip, David
CPC classification number: G11C11/5628 , G11C11/5642 , G11C16/10 , G11C16/28 , G11C29/028 , G11C2207/102
Abstract: Systems and methods are described for compacting operating parameter sets in a data storage device. Data storage device may be configured to maintain multiple operating parameter sets, each of which stores various parameters for interacting with different memory elements within the device. The data storage device may further be limited in the total number of operating parameter sets that can be maintained in the device at any given time. Thus, the data storage device may be required at various times to combine two or more operating parameter sets, to enable creation of a new operating parameter set. Because each operating parameter set can contain a number of parameters, identification of similar sets for combination can be computationally intensive. To identify similar sets in an efficient manner,a device as disclosed herein is enabled to reduce a dimensionality of each set, and locate similar sets under that reduced dimensionality.
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公开(公告)号：WO2019005230A1
公开(公告)日：2019-01-03
申请号：PCT/US2018/022502
申请日：2018-03-14
Applicant: WESTERN DIGITAL TECHNOLOGIES, INC.
Inventor： KIRSHENBAUM, Roi , INBAR, Karin , GOLDENBERG, Idan , YANG, Nian, Niles , ROM, Rami , BAZARSKY, Alexander , NAVON, Ariel , REUSSWIG, Philip, David
CPC classification number: G06F3/0659 , G06F3/0616 , G06F3/065 , G06F3/0653 , G06F3/0679 , G06N3/02 , G06N3/08 , G11C11/5642 , G11C16/0483 , G11C16/26 , G11C29/028 , G11C2029/5004
Abstract: Systems and methods are described for generating location-based read voltage offsets in a data storage device. Optimal read voltage thresholds vary across memory elements of a device. However, data storage devices are often limited in the number of read voltage thresholds that can be maintained in the device. Thus, it may not be possible to maintain optimal read voltage parameters for each memory element within a device. The systems and methods described herein provide for increased accuracy of read voltage thresholds when applied to memory elements within a specific location in a device, by enabling the use of location-based read voltage offsets, depending on a relative location of the memory element being read from. The read voltage offsets can be determined based on application of a neural network to data regarding optimal read voltage thresholds determined from at least a sample of memory elements in a device.
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