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公开(公告)号：WO2023074223A1
公开(公告)日：2023-05-04
申请号：PCT/JP2022/035799
申请日：2022-09-27
Applicant: 株式会社ＪＣＵ
Abstract: 以下の工程（ａ）および（ｂ） （ａ）被めっき物を、硫酸、硫酸銅、塩化物イオン、ブライトナー、レベラーを含有し、硫酸が２００ｇ／Ｌ以上である電解銅めっき液で電気めっきを行う工程 （ｂ）電気めっきを行った被めっき物を４００℃以下で加熱処理する工程 を含むことを特徴とする被めっき物中の銅結晶粒を粗大化する方法により、結晶が粗大化した銅めっき膜を簡便な操作で得ることができる。
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公开(公告)号：WO2023001696A1
公开(公告)日：2023-01-26
申请号：PCT/EP2022/069779
申请日：2022-07-14
Applicant: VELIMIR GMBH & CO. KG
Inventor： VELIMIR, Marinko , VELIMIR, Viktor , DE GRUYTER, Henning , CORDES, Jörg
Abstract: Die Erfindung betrifft einen Verbundwerkstoff mit einer chromhaltigen Deckschicht, umfassend eine auf einem Substrat angeordnete haftvermittelnde Schicht und eine auf der haftvermittelnden Schicht angeordnete chromhaltige Deckschicht, wobei - das Substrat aus einem Material besteht, das aus der Gruppe ausgewählt ist, die Kupfer, nickelfreie Kupferlegierungen, mit Kupfer beschichteten Kunststoff, mit Kupfer beschichteten Stahl und mit Kupfer beschichtete Zinkdruckgussprodukte umfasst; - die haftvermittelnde Schicht zu mindestens 99,9 Gew.-% Kupfer enthält; und - die haftvermittelnde Schicht unmittelbar auf dem Substrat angeordnet ist und die Deckschicht unmittelbar auf der dem Substrat gegenüberliegenden Seite der haftvermittelnden Schicht angeordnet ist.
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公开(公告)号：WO2022271390A1
公开(公告)日：2022-12-29
申请号：PCT/US2022/030882
申请日：2022-05-25
Applicant: MACDERMID ENTHONE INC.
Inventor： DESALVO, Donald , BLAKE, Ron , GUGLIOTTI, Carmichael , DECESARE, William, J. , BELLEMARE, Richard, A. , WATKOWSKI, James , LONG, Ernest
Abstract: A method of copper electroplating in the manufacture of printed circuit boards. The method is used for filling through-holes and blind micro-vias with copper. The method includes the steps of: (1) preparing an electronic substrate to. receive copper electroplating thereon; (2) forming at least one of one or more through-holes and/or one or more blind micro-vias in the electronic substrate: and (3) electroplating copper in the at one or more through-holes and/or one or more blind micro-vias by contacting the electronic substrate with an acid copper electrolyte. The acid copper electrolyte is used to plate the one or more through-holes and/or the one or more blind micro-vias using a complex waveform including pulse reverse plating, DC plating and/or synchronous pulse plating. The complex waveforms can be used for filling through-holes and blind microvias with copper without defects.
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公开(公告)号：WO2022243462A1
公开(公告)日：2022-11-24
申请号：PCT/EP2022/063623
申请日：2022-05-19
Applicant: AVENI
Inventor： MEVELLEC, Vincent , DOUSSOT, Céline Pascale , CAILLARD, Louis
Abstract: The present invention relates to an electrolyte composition for depositing graphene–doped copper onto semiconductor substrates. This electrolyte has a pH ranging from 7.0 to 11.0 and comprises copper ions at a concentration ranging from 0.1 mM to 2000 mM, at least one amine present at a concentration comprised between 0.5 mM and 5000 mM, from 0.1 g/L to 10 g/L of graphene or graphene oxide and a solvent.
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公开(公告)号：WO2022200548A1
公开(公告)日：2022-09-29
申请号：PCT/EP2022/057875
申请日：2022-03-25
Applicant: ATOTECH DEUTSCHLAND GMBH & CO. KG
Inventor： HAACK, Peter , PELDZINSKI-RANISCH, Vera , VAZHENIN, Grigory , SHIN, Hee-Bum , LEE, Jaewon , BERNHARD, Tobias
IPC: C23C18/16 , C23C18/38 , C23C18/40 , C23F1/18 , C25D5/18 , C25D5/00 , C25D7/06 , H05K3/18 , C25D3/38 , H05K3/38
Abstract: A process for electrochemical deposition of copper, comprising - providing a rolled and annealed copper foil comprising a first surface and a second surface, - etching the first surface of the rolled and annealed copper foil, thereby creating a first etched surface, - depositing copper by electroless copper deposition on the first etched surface, thereby creating a first electroless copper layer on the first etched surface, - depositing further copper by electrochemical deposition on the first electroless copper layer, thereby creating a first electrochemical copper layer, wherein in the electrochemical deposition in a first period of time a first current density is applied and in a second period of time a second current density is applied, wherein the second current density is lower than the first current density, and a layered product obtainable by the process.
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Patent Agency Ranking
公开(公告)号：WO2022002899A1
公开(公告)日：2022-01-06
申请号：PCT/EP2021/067788
申请日：2021-06-29
Applicant: ATOTECH DEUTSCHLAND GMBH
Inventor： BRUNNER, Heiko , HEYDE, Sandra , HAACK, Peter , LLAVONA-SERRANO, Angela
Abstract: The invention relates to aqueous acidic plating baths for electrodeposition of copper and copper alloys in the manufacture of printed circuit boards, IC substrates, semiconducting and glass devices for electronic applications. The plating bath according to the present invention comprises copper ions, at least one acid and an ureylene polymer. The plating bath is particularly useful for filling recessed structures with copper and build-up of pillar bump structures.
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公开(公告)号：WO2020096906A1
公开(公告)日：2020-05-14
申请号：PCT/US2019/059496
申请日：2019-11-01
Applicant: COVENTYA, INC.
Inventor： BOKISA, George , THEURET, Claire
Abstract: An aqueous acidic copper electroplating bath that produces a satin deposit includes a source of copper ions, an acid, a satin additive, and optionally one or more acidic copper electroplating bath additive(s), wherein the satin additive includes a block copolymer with the structure of RO(EO)m(PO)nH.
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公开(公告)号：WO2020042613A1
公开(公告)日：2020-03-05
申请号：PCT/CN2019/081476
申请日：2019-04-04
Applicant: 广东天承科技有限公司
Abstract: 本申请提供了一种电镀液及其电镀方法。该电镀液，按质量-体积浓度计，包含如下组分：四价钒0.3～25g/L、二价铁4～10g/L、三价铁0.3～5g/L、硫酸铜100～250g/L、硫酸50～210g/L、氯化物30～150mg/L。
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公开(公告)号：WO2018110198A1
公开(公告)日：2018-06-21
申请号：PCT/JP2017/041365
申请日：2017-11-16
Applicant: コニカミノルタ株式会社
Abstract: 本発明は、導電性に優れ且つメッキ太りが抑制された透明導電膜を形成できる透明導電膜の形成方法及び電解メッキ用メッキ液を提供することを課題とし、当該課題は、印刷法によって透明基材上に導電性細線からなる透明導電膜中間体を形成し、次いで、前記透明導電膜中間体に電解メッキを施して透明導電膜を形成する透明導電膜の形成方法であって、前記電解メッキに用いられるメッキ液に酸化剤が含有されている透明導電膜の形成方法、及び酸化剤を含有する電解メッキ用メッキ液により解決される。
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公开(公告)号：WO2018088644A1
公开(公告)日：2018-05-17
申请号：PCT/KR2017/003373
申请日：2017-03-28
Applicant: 일진머티리얼즈 주식회사
Abstract: 본 발명은 저온 물성이 우수한 이차전지용 전해동박 및 그의 제조방법에 관한 것으로서, 더욱 상세하게는 저온에도 동박의 인장강도 및 연신율의 물성변화가 적어 저온사이클 특성이 우수한 이차전지용 전해동박 및 그의 제조방법에 관한 것이다. 본 발명의 일 측면에 따르면, 본 발명의 실시예는 TOC(Total organic carbon), 코발트, 철 및 아연이 포함된 도금액에서 드럼을 이용하여 제조되며, 음극활물질이 코팅된 이차전지용 전해동박으로, 상기 전해동박에 함유된 TOC와 코발트, 철 및 아연의 비율은 하기 식 1에 따르는 이차전지용 전해동박을 포함한다. [식 1] TOC / (코발트+철+아연) = 1.0 ~ 1.2
Abstract translation:
本发明是具有优异的低温性能的二次电池的电解铜箔，并涉及制造相同，的方法更具体地，在拉伸强度优异的二次电池和铜箔的伸长较少低温循环特性的物理性质的变化为低温 电解铜箔及其制造方法。 根据本发明的一个方面，本发明的一个实施例是使用在包含TOC（总有机碳），钴，铁和锌，所述二次电池的电解铜箔的负极活性物质的电镀液的滚筒涂布，其中，所述电解铜箔制得 包括根据下式1的二次电池用电解铜箔中所含的TOC和钴，铁和锌的比例。 TOC /（钴+铁+锌）= 1.0至1.2 /
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