Abstract:
Dispositif de palpage étanche d'une surface disposée dans une enceinte sous atmosphère contrôlée, comportant un bâti, au moins une canne de palpage (14) d'axe longitudinal (X) munie d'une extrémité destinée à venir en contact avec la surface et apte à se déplacer le long de l'axe longitudinal (X), un soufflet de connexion (16) à l'enceinte, et des moyens de détection de la position de la canne de palpage. Le soufflet (16) comporteune première extrémité (16.1) fixée de manière étanche à une paroi de l'enceinte et une deuxième extrémité (16.2) fixée de manière étanche à la canne de palpage (14) de sorte que, lorsque le dispositif de montage est fixé sur l'enceinte, la première extrémité de la canne de palpage (14) est disposée dans l'enceinte et peut être rapprochée ou éloignée de ladite surface (F) le long de son axe longitudinal (X).
Abstract:
An up-drawing continuous casting apparatus includes a holding furnace that holds molten metal, a shape determining member that is arranged near a molten metal surface of the molten metal held in the holding furnace, and that determines a sectional shape of a casting by the molten metal passing through the shape determining member, and a cooling portion that cools the molten metal that has passed through the shape determining member. The shape determining member includes, on a main surface on the molten metal surface side, at least one of a protruding portion that protrudes from the main surface, or a recessed portion that is recessed from the main surface.
Abstract:
Methods for producing single crystal silicon ingots in which an array of quartz particles are added to the crucible assembly before ingot growth are disclosed. The array may be disposed in the outer melt zone of the crucible assembly as in a continuous Czochralski (CCz) process. The array is made of quartz particles that are interconnected by linking members.
Abstract:
An up-drawing continuous casting apparatus includes a holding furnace that holds molten metal; a shape determining member that is arranged near a molten metal surface of a casting held in the holding furnace, and that determines a sectional shape of the molten metal by the molten metal passing through the shape determining member; a cooling portion that cools and solidifies the molten metal that has passed through the shape determining member; and a molten metal cooling portion that lowers a temperature of the molten metal held in the holding furnace.
Abstract:
An up-drawing continuous casting apparatus includes a holding furnace that holds molten metal; a shape determining member that is arranged near a molten metal surface of a casting held in the holding furnace, and that determines a sectional shape of the molten metal by the molten metal passing through the shape determining member; a cooling portion that cools and solidifies the molten metal that has passed through the shape determining member; and a molten metal cooling portion that lowers a temperature of the molten metal held in the holding furnace.
Abstract:
A crystalline article includes a single-crystal ceramic fiber, tape or ribbon. The fiber, tape or ribbon has at least one crystallo graphic facet along its length, which is generally at least one meter long. In the case of sapphire, the facets are R-plane, M-plane, C-plane or A- plane facets. Epitaxial articles, including superconducting articles, can be formed on the fiber, tape or ribbon.
Abstract:
실시 예는 챔버, 상기 챔버 내부에 마련되고, 단결정 성장 원료인 용융액을 수용하는 도가니, 상기 도가니 상단에 배치되는 도가니 스크린, 및 상기 도가니 스크린을 상승 또는 하강시키는 이송 수단을 포함하며, 상기 도가니 스크린과 상기 제1 상부 단열부를 상승함으로써 행정 거리를 조절할 수 있고, 행정 거리 부족에 기인하는 리프트 오프 공정 불가능, 및 단결정의 크랙 발생을 방지할 수 있다.
Abstract:
본 발명은 단결정 실리콘버튼을 이용한 폴리실리콘 제조장치에 관한 것으로서, 진공 분위기를 유지하는 진공챔버, 상기 진공챔버에 구비되어 전자빔을 조사하는 전자빔조사부, 입자형태의 실리콘원료가 투입되며, 상기 전자빔조사부로부터 전자빔이 조사되는 영역 내에 배치되어 전자빔에 의해 실리콘원료가 용융되어 실리콘용탕이 만들어지는 실리콘용융부, 하부에 냉각채널이 형성되어 상기 실리콘용융부로부터 공급되는 실리콘용탕을 응고시키는 일방향응고부 및 상기 일방향응고부 내부에 구비되며 별도로 제조되어 상기 실리콘용융부로부터 공급되는 실리콘용탕을 상기 일방향응고부 하부로 이송시키는 단결정 실리콘버튼 및 상기 단결정 실리콘버튼 하면에 접합되며 상기 단결정 실리콘버튼이 이동되도록 하는 흑연더미바를 을 포함하는 스타트블럭을 포함한다.
Abstract:
A system for growing a crystal ingot includes a crucible and a weir. The crucible has a base and a sidewall for the containment of a silicon melt therein. The weir is located along the base of the crucible inward from the sidewall of the crucible. The weir has a body connected with at least a pair of legs disposed to inhibit movement of the silicon melt therebetween.