公开(公告)号：WO2021150625A1

公开(公告)日：2021-07-29

申请号：PCT/US2021/014211

申请日：2021-01-20

Applicant: APPLIED MATERIALS, INC.

Inventor： YOSHIDA, Naomi ,  REN, He ,  JIANG, Hao ,  SHEN, Chenfei ,  LIN, Chi-Chou ,  CHEN, Hao ,  LU, Xuesong ,  NAIK, Mehul B.

IPC: H01L21/02 ,  H01L21/768 ,  B08B5/02 ,  H01L21/02057 ,  H01L21/28026 ,  H01L21/32051 ,  H01L29/66795

Abstract: Embodiments of the present disclosure generally relate to methods of cleaning a structure and methods of deposition a capping layer in a structure. The method of cleaning a structure includes suppling a cleaning gas, including a first gas including nitrogen (N) and a second gas including fluorine (F), to a bottom surface of a structure. The cleaning gas removes unwanted metal oxide and etch residue from the bottom surface of he structure. The method of depositing a capping layer includes depositing the capping layer over the bottom surface of the structure. The methods described herein reduce the amount of unwanted metal oxides and residue, which improves adhesion of deposited capping layers.

公开(公告)号：WO2023060239A1

公开(公告)日：2023-04-13

申请号：PCT/US2022/077769

申请日：2022-10-07

Applicant: GOOGLE LLC

Inventor： BURKETT, Brian James ,  KREIKEBAUM, John Mark

IPC: H01L21/033 ,  H01L21/0206 ,  H01L21/0331 ,  H01L21/0334 ,  H01L21/0337 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/32051 ,  H01L21/324 ,  H10N60/0912

Abstract: A substrate, a first layer disposed on the substrate, and a second layer disposed on the first layer are provided. An opening is etched through the second layer to the first layer. A first portion of the first layer is etched through the opening using a first etchant, to expose a surface of the substrate through the opening. A feature is deposited on the surface of the substrate through the opening. A second portion of the first layer is etched using a gaseous etchant, to release the substrate from the second layer.

公开(公告)号：WO2021144334A1

公开(公告)日：2021-07-22

申请号：PCT/EP2021/050632

申请日：2021-01-14

Applicant: MERCK PATENT GMBH

Inventor： LIU, Guo ,  WOODRUFF, Jacob

IPC: C23C16/34 ,  C23C16/16 ,  C23C16/18 ,  C23C16/02 ,  C23C16/56 ,  C23C16/455 ,  H01L21/02 ,  C23C16/0272 ,  C23C16/45531 ,  C23C16/45553 ,  H01L21/28562 ,  H01L21/32051 ,  H01L21/76843

Abstract: Methods of forming ruthenium-containing films by atomic layer deposition and/or chemical vapor deposition are provided. The methods include a first step of forming a first film on a surface of the substrate and a second step of forming the ruthenium- containing film on at least a portion of the first film. The first step includes delivering a titanium precursor and a first nitrogen-containing co-reactant to the substrate and delivering a first ruthenium precursor and a second nitrogen-containing co-reactant to the substrate to form the first film. The second step includes delivering a second ruthenium precursor and a third co-reactant to the substrate. Ruthenium-containing films are also provided.