公开(公告)号：WO2022005948A1

公开(公告)日：2022-01-06

申请号：PCT/US2021/039332

申请日：2021-06-28

Applicant: APPLIED MATERIALS, INC.

Inventor： LI, Rui ,  XIE, Xiangjin ,  HA, Tae Hong ,  TANG, Xianmin ,  CHEN, Lu

IPC: H01L21/768 ,  H01L21/285 ,  C23C16/34 ,  C23C16/56 ,  C23C16/455 ,  H01L21/67 ,  C23C16/45531 ,  C23C16/45544 ,  H01L21/76843 ,  H01L21/76862

Abstract: Methods of forming copper interconnects are described. A doped tantalum nitride layer formed on a copper layer on a substrate has a first amount of dopant. The doped tantalum nitride layer is exposed to a plasma comprising one or more of helium or neon to form a treated doped tantalum nitride layer with a decreased amount of dopant. Apparatus for performing the methods are also described.

公开(公告)号：WO2021254989A1

公开(公告)日：2021-12-23

申请号：PCT/EP2021/066028

申请日：2021-06-15

Applicant: MERCK PATENT GMBH

Inventor： NARASIMHAN, Vijay Kris ,  LEHN, Jean-Sébastien M. ,  LITTAU, Karl ,  WOODRUFF, Jacob ,  KANJOLIA, Ravindra

IPC: C23C16/40 ,  C23C16/455 ,  H01L21/02 ,  H01L21/28 ,  H01L29/51 ,  C23C16/405 ,  C23C16/45531 ,  C23C16/45553 ,  H01L21/02181 ,  H01L21/02189 ,  H01L21/02194 ,  H01L21/02205 ,  H01L21/0228 ,  H01L21/02304 ,  H01L28/40 ,  H01L29/516

Abstract: The disclosed and claimed subject matter relates to crystalline ferroelectric materials that include a mixture of hafnium oxide and zirconium oxide having a substantial (i.e., approximately 40% or more) or majority portion of the material in a ferroelectric phase as deposited (i.e., without the need for further processing, such as a subsequent capping or annealing) and methods for preparing and depositing these materials.

公开(公告)号：WO2021146708A1

公开(公告)日：2021-07-22

申请号：PCT/US2021/013952

申请日：2021-01-19

Applicant: HUNT ENERGY ENTERPRISES, L.L.C.

Inventor： LIM, Jin-Myoung ,  KONG, Fantai ,  GRIFFIN, Mark

IPC: H01M4/36 ,  H01M4/62 ,  H01M4/525 ,  H01M4/505 ,  H01M4/38 ,  H01M4/587 ,  C23C16/40 ,  C23C16/455 ,  C23C16/403 ,  C23C16/405 ,  C23C16/407 ,  C23C16/4408 ,  C23C16/4417 ,  C23C16/45529 ,  C23C16/45531 ,  C23C16/45555 ,  H01M10/0525 ,  H01M10/54 ,  H01M4/131 ,  H01M4/133 ,  H01M4/134 ,  H01M4/1391 ,  H01M4/1393 ,  H01M4/1395 ,  H01M4/364 ,  H01M4/366 ,  H01M4/386 ,  H01M4/624

Abstract: Batteries, methods for recycling batteries, and methods of forming one or more electrodes for batteries are disclosed. The battery includes at least one of (i) a cathode including a nickel-rich material and a first sub-nanoscale metal oxide coating on the nickel-rich material; and (ii) an anode including an anode material and a second sub-nanoscale metal oxide coating disposed on the anode material.

公开(公告)号：WO2021144334A1

公开(公告)日：2021-07-22

申请号：PCT/EP2021/050632

申请日：2021-01-14

Applicant: MERCK PATENT GMBH

Inventor： LIU, Guo ,  WOODRUFF, Jacob

IPC: C23C16/34 ,  C23C16/16 ,  C23C16/18 ,  C23C16/02 ,  C23C16/56 ,  C23C16/455 ,  H01L21/02 ,  C23C16/0272 ,  C23C16/45531 ,  C23C16/45553 ,  H01L21/28562 ,  H01L21/32051 ,  H01L21/76843

Abstract: Methods of forming ruthenium-containing films by atomic layer deposition and/or chemical vapor deposition are provided. The methods include a first step of forming a first film on a surface of the substrate and a second step of forming the ruthenium- containing film on at least a portion of the first film. The first step includes delivering a titanium precursor and a first nitrogen-containing co-reactant to the substrate and delivering a first ruthenium precursor and a second nitrogen-containing co-reactant to the substrate to form the first film. The second step includes delivering a second ruthenium precursor and a third co-reactant to the substrate. Ruthenium-containing films are also provided.