公开(公告)号：WO2023059381A1

公开(公告)日：2023-04-13

申请号：PCT/US2022/038211

申请日：2022-07-25

Applicant: APPLIED MATERIALS, INC.

Inventor： WANG, Peiqi ,  CHENG, Cheng ,  WU, Kai ,  HA, Insu ,  LEE, Sang Jin

IPC: H01L21/768 ,  H01L21/285 ,  C23C16/042 ,  C23C16/38 ,  C23C16/45553 ,  C23C16/56

Abstract: A structure of a substrate is provided including a tungsten-containing layer including a nucleation layer and a fill layer. The nucleation layer is disposed along sidewalls of the opening. The nucleation layer includes boron and tungsten. The fill layer is disposed over the nucleation layer within the opening. The tungsten-containing layer includes a resistivity of about 16 pQ cm or less. The tungsten-containing layer has a thickness of about 200 A to about 600 A. The tungsten-containing layer thickness is half a width of the tungsten-containing layer disposed within the opening between opposing sidewall portions of the opening.

公开(公告)号：WO2021252788A1

公开(公告)日：2021-12-16

申请号：PCT/US2021/036856

申请日：2021-06-10

Applicant: ENTEGRIS, INC.

Inventor： CHEN, Philip S. H. ,  CONDO, Eric ,  HENDRIX, Bryan C. ,  BAUM, Thomas H. ,  KUIPER, David

IPC: C23C16/455 ,  C23C16/36 ,  H01L21/02 ,  C07F7/10 ,  C07F7/18 ,  C01B21/0828 ,  C07F7/0814 ,  C07F7/1804 ,  C23C16/308 ,  C23C16/401 ,  C23C16/45536 ,  C23C16/45542 ,  C23C16/45553 ,  H01L21/02126 ,  H01L21/0214 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228

Abstract: Provided is a plasma enhanced atomic layer deposition (PEALD) process for depositing etch-resistant SiOCN films. These films provide improved growth rate, improved step coverage and excellent etch resistance to wet etchants and post-deposition plasma treatments containing O2 and NH3 co-reactants. This PEALD process relies on one or more precursors reacting in tandem with the plasma exposure to deposit the etch-resistant thin-films of SiOCN. The films display excellent resistance to wet etching with dilute aqueous HF solutions, both after deposition and after post-deposition plasma treatment(s). Accordingly, these films are expected to display excellent stability towards post-deposition fabrication steps utilized during device manufacturing and build.

公开(公告)号：WO2022271815A1

公开(公告)日：2022-12-29

申请号：PCT/US2022/034513

申请日：2022-06-22

Applicant: APPLIED MATERIALS, INC. ,  NATIONAL UNIVERSITY OF SINGAPORE

Inventor： BARIK, Chandan Kr ,  YONG, Doreen Wei Ying ,  SUDIJONO, John ,  TRINH, Cong ,  BHUYAN, Bhaskar Jyoti ,  HAVERTY, Michael ,  KALIAPPAN, Muthukumar ,  CHEN, Yingqian ,  TUMMANAPELLI, Anil Kumar ,  WONG, Richard Ming Wah

IPC: H01L21/02 ,  C23C16/40 ,  C23C16/34 ,  C23C16/455 ,  C07F7/08 ,  C23C16/345 ,  C23C16/401 ,  C23C16/45553 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02208 ,  H01L21/0228

Abstract: Novel cyclic silicon precursors and oxidants are described. Methods for depositing silicon-containing films on a substrate are described. The substrate is exposed to a silicon precursor and a reactant to form the silicon-containing film (e.g., elemental silicon, silicon oxide, silicon nitride). The exposures can be sequential or simultaneous.

公开(公告)号：WO2022002809A1

公开(公告)日：2022-01-06

申请号：PCT/EP2021/067605

申请日：2021-06-28

Applicant: MERCK PATENT GMBH

Inventor： LIU, Guo ,  WOODRUFF, Jacob ,  KANJOLIA, Ravindra

IPC: C23C16/16 ,  C01G55/00 ,  C23C16/18 ,  C23C16/455 ,  C23C16/45523 ,  C23C16/45553

Abstract: Methods of forming ruthenium-containing films by pulsed chemical vapor deposition are provided. The methods include at least one deposition cycle. The deposition cycle includes pulsing a zerovalent Ru precursor with a carrier gas in the absence of a co-reactant onto a surface of a substrate, and delivering a purge gas to the surface of the substrate.

公开(公告)号：WO2021127470A1

公开(公告)日：2021-06-24

申请号：PCT/US2020/066058

申请日：2020-12-18

Applicant: L'AIR LIQUIDE, SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE ,  AMERICAN AIR LIQUIDE, INC.

Inventor： GIRARD, Jean-Marc ,  NOH, Wontae ,  LEE, Jooho

IPC: H01L21/205 ,  H01L21/316 ,  C01F7/304 ,  C07F5/069 ,  C09D1/00 ,  C23C16/0272 ,  C23C16/04 ,  C23C16/403 ,  C23C16/45553 ,  H01L21/02178 ,  H01L21/02205 ,  H01L21/0228 ,  H01L21/3105 ,  H01L21/32 ,  H01L21/321

Abstract: Processes of selectively depositing a metal-containing film comprise: providing a surface having a plurality of materials exposed thereon simultaneously, and exposing the surface to a vapor of a metal-containing film-forming composition that contains a precursor having the formula: LxM(-N(R)-(CR'2)n-NR"2) wherein M is a Group12, Group 13, Group 14, Group 15, Group IV or Group V element; x+1 is the oxidation state of the M; L is an anionic ligand, independently selected from dialkylamine, alkoxy, alkylimine, bis(trialkylsilylamine), amidinate, betadiketonate, ketoimine, halide, or the like; R, R''each are independently a C1-C10 linear, branched or cyclic alkyl, alkenyl, or tria!ky!si!y! group; R' is H or a C1-C10 linear, branched or cyclic alkyl, alkenyl or trialkyisilyl group; n =1 - 4, wherein at least one of the materials is at least partially blocked by a blocking agent from the deposition of the metal-containing film through a vapor deposition process.

公开(公告)号：WO2022031351A1

公开(公告)日：2022-02-10

申请号：PCT/US2021/035143

申请日：2021-06-01

Applicant: LAWRENCE LIVERMORE NATIONAL SECURITY, LLC

Inventor： MILLER, John S. ,  ELHADJ, Selim ,  SPINKA, Thomas M.

IPC: C23C16/44 ,  C23C16/455 ,  C23C16/40 ,  C23C16/448 ,  H01S3/06 ,  H01S3/16 ,  C23C16/403 ,  C23C16/45536 ,  C23C16/45544 ,  C23C16/45553 ,  C23C16/45555

Abstract: A method is disclosed for doping a quantity of powder particles. A container having a central chamber is initially charged with a quantity of powder particles. A quantity of precursor is sublimed to form a heated precursor. A quantity of carrier gas is mixed with the precursor to form a mixture of heated precursor/carrier gas. The central chamber is charged with the heated precursor/carrier gas and then moved to cause interaction of the powder particles with the heated precursor/carrier gas to form a first monolayer coating on the powder particles. The heated precursor/carrier gas is then removed from the central chamber and the central chamber is charged with a O2/O3 gas under a plasma. The central chamber is then further moved to produce interaction of the O2/O3 gas with the first monolayer coating on the powder particles to modify the first monolayer coating to create a different, single monolayer coating forming an oxide coating on the powder particles.

公开(公告)号：WO2022005907A1

公开(公告)日：2022-01-06

申请号：PCT/US2021/039189

申请日：2021-06-25

Applicant: LAM RESEARCH CORPORATION

Inventor： BROGAN, Lee J. ,  VAN CLEEMPUT, Patrick ,  HUIE, Matthew Martin ,  BLAKENEY, Kyle Jordan ,  LIU, Yi Hua

IPC: H01L21/768 ,  H01L21/285 ,  C23C16/04 ,  C23C16/06 ,  C23C16/34 ,  C23C16/40 ,  C23C16/455 ,  C23C16/0245 ,  C23C16/45536 ,  C23C16/45553 ,  C23C16/56

Abstract: Various embodiments herein relate to methods, apparatus, and systems for forming an interconnect structure, or a portion thereof, on a substrate. In one example, the method includes receiving the substrate in a processing chamber, the substrate having dielectric material exposed within recessed features formed therein; exposing the substrate to plasma to thereby modify a top surface of the dielectric material; forming a metal oxide barrier layer on the modified top surface of the dielectric material, wherein the metal oxide barrier layer is formed through atomic layer deposition and/or chemical vapor deposition. In certain implementations, one or more additional step may be taken to improve processing results, for example to promote nucleation and/or adhesion of relevant layers.

公开(公告)号：WO2021141324A1

公开(公告)日：2021-07-15

申请号：PCT/KR2020/019426

申请日：2020-12-30

Applicant: 주식회사 유진테크 머티리얼즈

Inventor： 이근수 ,  김재민 ,  최웅진

IPC: C23C16/455 ,  C23C16/04 ,  C23C16/40 ,  H01L21/02 ,  C23C16/403 ,  C23C16/45534 ,  C23C16/45553 ,  H01L21/0228

Abstract: 본 발명의 일 실시예에 의하면, 표면 보호 물질을 이용한 박막 형성 방법은, 금속 전구체를 기판이 놓여진 챔버의 내부에 공급하여, 상기 금속 전구체를 상기 기판에 흡착하는 금속 전구체 공급 단계; 상기 챔버의 내부를 퍼지하는 단계; 그리고 상기 챔버의 내부에 반응 물질을 공급하여 흡착된 상기 금속 전구체와 반응하고 박막을 형성하는 박막 형성 단계를 포함하되, 상기 방법은 상기 박막 형성 단계 이전에, 상기 표면 보호 물질을 공급하여 상기 기판에 흡착하는 표면 보호 물질 공급 단계; 그리고 상기 챔버의 내부를 퍼지하는 단계를 더 포함한다.

公开(公告)号：WO2021127287A1

公开(公告)日：2021-06-24

申请号：PCT/US2020/065770

申请日：2020-12-17

Applicant: APPLIED MATERIALS, INC.

Inventor： MUSTAFA, Muhannad ,  RASHEED, Muhammad

IPC: C23C16/455 ,  C23C16/44 ,  B05B1/005 ,  B05B1/185 ,  C23C16/45544 ,  C23C16/45553 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/458 ,  C23C16/4586 ,  H01L21/687

Abstract: Embodiments of showerheads for use in a process chamber are provided herein. In some embodiments, a showerhead includes a first spiral channel extending from a central region to a peripheral region of the showerhead; a second spiral channel extending from a central region to a peripheral region of the showerhead, wherein the second spiral channel is interleaved with the first spiral channel and fluidly independent from the first spiral channel; a plurality of first channels extending from the first spiral channel to a plurality of first gas distribution holes on a lower surface of the showerhead, wherein each first channel is a singular channel extending at an angle; and a plurality of second channels extending from the second spiral channel to a plurality of second gas distribution holes on the lower surface of the showerhead, wherein each second channel is a singular channel extending at an angle.

公开(公告)号：WO2020163359A1

公开(公告)日：2020-08-13

申请号：PCT/US2020/016613

申请日：2020-02-04

Applicant: VERSUM MATERIALS US, LLC

Inventor： WANG, Meiliang ,  LEI, Sinjian ,  CHANDRA, Haripin ,  MACDONALD, Matthew, R.

IPC: C23C16/40 ,  C23C16/455 ,  C23C16/56 ,  C23C16/44 ,  C07F7/10 ,  C07F7/21 ,  C23C16/401 ,  C23C16/45553

Abstract: A method for depositing a film comprising silicon and oxygen onto a substrate includes (a) providing a substrate in a reactor; (b) introducing into the reactor at least one silicon precursor compound selected from the group consisting of Formulae A, B, and C as described herein, (c) purging the reactor with a purge gas; (d) introducing at least one of an oxygen- containing source and a nitrogen-containing source into the reactor; and (e) purging the reactor with the purge gas, wherein the steps b through e are repeated until a desired thickness of resulting silicon-containing film is deposited; and (f) treating the resulting silicon-containing film with R3xSi(NR1R2)4-x wherein R1-3 are the same as aforementioned, preferably methyl or ethyl; and x = 1, 2, or 3; and wherein the method is conducted at one or more temperatures ranging from about 20 °C to 300 °C.