公开(公告)号：WO2021259479A1

公开(公告)日：2021-12-30

申请号：PCT/EP2020/067774

申请日：2020-06-25

Applicant: HUAWEI TECHNOLOGIES CO., LTD. ,  BADAROGLU, Mustafa

Inventor： BADAROGLU, Mustafa

IPC: H01L21/768 ,  H01L23/528 ,  H01L23/535 ,  H01L21/74 ,  H01L21/743 ,  H01L21/76897 ,  H01L23/5286

Abstract: A semiconductor device includes a substrate having one or more active regions and a power rail located in an isolation trench in the semiconductor device. The active region extends further from the substrate than the power rail. The semiconductor device further includes one or more source/drain (S/D) contacts having a top wall extending along a surface of the active region facing away from the substrate and a side wall extending along a surface of the active region on the same side as the power rail but farther from the substrate. The semiconductor device includes a via trench adjacent to the side wall. The trench includes a via which is on a first side in electrical contact with a surface of power rail facing away from substrate. On another side, perpendicular to first side, the via is conformal to and in electrical contact with the side wall of the S/D contact.

公开(公告)号：WO2021254850A1

公开(公告)日：2021-12-23

申请号：PCT/EP2021/065479

申请日：2021-06-09

Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

Inventor： ESCOFFIER, René ,  MOHAMAD, Blend

IPC: H01L29/778 ,  H01L29/10 ,  H01L21/768 ,  H01L29/417 ,  H01L29/423 ,  H01L21/336 ,  H01L29/20 ,  H01L21/743 ,  H01L29/1045 ,  H01L29/2003 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/42376 ,  H01L29/66462 ,  H01L29/7786

Abstract: La présente description concerne un transistor (200) comportant une région (100G) de grille pénétrant à l'intérieur d'une première couche (104) en nitrure de gallium, dans lequel une deuxième couche (202) électriquement conductrice revêt au moins un des flancs de ladite région de grille.