公开(公告)号：WO2023076492A1

公开(公告)日：2023-05-04

申请号：PCT/US2022/048051

申请日：2022-10-27

Applicant: AXCELIS TECHNOLOGIES, INC.

Inventor： PLATOW, Wilhelm ,  SATOH, Shu ,  BASSOM, Neil

IPC: H01J37/317 ,  H01J37/05

Abstract: An ion implantation systemlOO has an ion source 104 to generate an ion beam 108, and a mass analyzer 112 to define a first ion beam 114 having desired ions at a first charge state. A first linear accelerator 116 accelerates the first ion beam to a plurality of first energies. A charge stripper 118 strips electrons from the desired ions defining a second ion beam 120 at a plurality of second charge states. A first dipole magnet 124 spatially disperses and bends the second ion beam at a first angle 125. A charge defining aperture 126 passes a desired charge state of the second ion beam while blocking a remainder of the plurality of second charge states. A quadrupole apparatus 128 spatially focuses the second ion beam, defining a third ion beam 130. A second dipole magnet 132 bends the third ion beam at a second angle 133. A second linear accelerator 134 accelerates the third ion beam. A final energy magnet 136 bends the third ion beam at a third angle 137, and wherein an energy defining aperture 138 passes only the desired ions at a desired energy and charge state.

公开(公告)号：WO2023075968A1

公开(公告)日：2023-05-04

申请号：PCT/US2022/044859

申请日：2022-09-27

Applicant: APPLIED MATERIALS, INC.

Inventor： SUN, Dawei ,  HALL, Daniel

IPC: H01J37/20 ,  H01L21/683 ,  H01J37/317

Abstract: A chuck for heating and clamping a workpiece, such as a semiconductor workpiece, is disclosed. The chuck is configured to allow the workpiece to be heated to temperatures in excess of 600C. Further, while the workpiece is heating, the components that make up the chuck may be maintained at a much lower temperature, such as room temperature. The chuck includes a housing, formed as a hollow cylinder with sidewalls and an open end. Electrodes are disposed at the top surface of the sidewalls to clamp the workpiece. A heat source is disposed in the cavity and emits radiated heat toward the workpiece. A clamp ring may be used to secure the workpiece. In some embodiments, a thermal sensor is used to monitor the temperature of the workpiece.

公开(公告)号：WO2023002674A1

公开(公告)日：2023-01-26

申请号：PCT/JP2022/010583

申请日：2022-03-10

Applicant: 株式会社ブイ・テクノロジー

Inventor： 水村　通伸

IPC: H01J37/18 ,  H01J37/317

Abstract: 内部空間にイオン源から引き出されたイオンビームを調整して出射させる集束イオンビーム光学系を備えたビーム出射部と、前記内部空間と連通して、前記ビーム出射部から出射されるイオンビームを通過させて被処理基板に対するビーム照射を可能にする開口部と、を備え、前記内部空間が真空引きされる集束イオンビーム装置であって、前記開口部を開閉可能とする可動封止バルブを備える。

公开(公告)号：WO2023280642A1

公开(公告)日：2023-01-12

申请号：PCT/EP2022/067786

申请日：2022-06-28

Applicant: ASML NETHERLANDS B.V.

Inventor： MANGNUS, Albertus, Victor, Gerardus

IPC: H01J37/244 ,  H01J37/317

Abstract: A detector for use in a charged particle device for an assessment apparatus to detect charged particles from a sample, wherein the detector comprises: a backscatter detector component set to a backscatter bias electric potential and configured to detect higher energy charged particles; and a secondary detector component set to a secondary bias electric potential and configured to detect lower energy charged particles; wherein there is a potential difference between the backscatter bias electric potential and the secondary bias electric potential.

公开(公告)号：WO2022235399A1

公开(公告)日：2022-11-10

申请号：PCT/US2022/024407

申请日：2022-04-12

Applicant: APPLIED MATERIALS, INC.

Inventor： WRIGHT, Graham ,  ALVARADO, Daniel ,  WILSON, Eric Donald ,  LINDBERG, Robert

IPC: H01J37/08 ,  H01J27/02 ,  H01J37/317

Abstract: A system and method for extending the life of a cathode and repeller in an IHC ion source is disclosed. The system monitors the health of the cathode by operating using a known set of parameters and measuring the bias power used to generate the desired extracted beam current or the desired current from the arc voltage power supply. Based on the measured bias power, the system may determine whether the cathode is becoming too thin, and may take a corrective action. This corrective action may be to alert the operator; to operate the IHC ion source using a predetermined set of parameters; or to change the dilution used within the IHC source. By performing these actions, the life of the cathode may be more than doubled.

公开(公告)号：WO2022211910A1

公开(公告)日：2022-10-06

申请号：PCT/US2022/015959

申请日：2022-02-10

Applicant: APPLIED MATERIALS, INC.

Inventor： MURPHY, Paul J. ,  SINCLAIR, Frank ,  LU, Jun ,  TIEGER, Daniel ,  RENAU, Anthony

IPC: H01J37/304 ,  H01J37/26 ,  H01J37/317 ,  H01J2237/24585 ,  H01J37/05 ,  H01J37/08 ,  H01J37/3171 ,  H01J37/32082

Abstract: An ion implanter may include an ion source, arranged to generate a continuous ion beam, a DC acceleration system, to accelerate the continuous ion beam, as well as an AC linear accelerator to receive the continuous ion beam and to output a bunched ion beam. The ion implanter may also include an energy spreading electrode assembly, to receive the bunched ion beam and to apply an RF voltage between a plurality of electrodes of the energy spreading electrode assembly, along a local direction of propagation of the bunched ion beam.

公开(公告)号：WO2022165397A1

公开(公告)日：2022-08-04

申请号：PCT/US2022/014661

申请日：2022-02-01

Applicant: FOHTUNG, Edwin

Inventor： FOHTUNG, Edwin

IPC: H01J49/06 ,  G01N23/2273 ,  H01J37/26 ,  H01J37/317 ,  H01J49/42 ,  H01J49/48

Abstract: An electrostatic analyzer includes a cylindrical body having an inner cylinder and an outer cylinder that are coaxial with one another along a longitudinal axis of the cylindrical body. An inner cylindrical electrode is positioned on an exterior face of the inner cylinder. An outer cylindrical electrode is positioned on an interior face of the outer cylinder. A first azimuthal electrode positioned on a face of a first azimuthal plane that passes through the longitudinal axis. A second azimuthal electrode is positioned on a face of a second azimuthal plane that passes through the longitudinal axis. A first end electrode is positioned on a first end face of the cylindrical body. A second end electrode is positioned on a second end face of the cylindrical body.

公开(公告)号：WO2022146711A1

公开(公告)日：2022-07-07

申请号：PCT/US2021/063866

申请日：2021-12-16

Applicant: GLOBALWAFERS CO., LTD.

Inventor： ALBRECHT, Peter Daniel ,  WU, Junnan

IPC: H01J37/20 ,  C23C14/48 ,  G01N19/02 ,  H01J37/317

Abstract: Systems for implanting semiconductor structures with ions are disclosed. The semiconductor structure is positioned on a heatsink 100 and ions are implanted through a front surface of the semiconductor structure to form a damage region in the semiconductor structure. A parameter related to the coefficient of friction of the heatsink 100 is measured; e.g. a slide angle is measured by a testing apparatus 300. The parameter is compared to a baseline range.

公开(公告)号：WO2022038904A1

公开(公告)日：2022-02-24

申请号：PCT/JP2021/024560

申请日：2021-06-29

Applicant: 株式会社ブイ・テクノロジー

Inventor： 水村　通伸

IPC: H01J37/18 ,  H01J37/20 ,  H01J37/28 ,  H01J37/317

Abstract: 【解決手段】差動排気装置と集束イオンビームカラムとを備え、被処理基板の面方向の外側を取り囲むように吸い込み面を、露呈させる多孔質材料でなる真空パッドと、前記被処理基板と前記真空パッドとを載せる基板支持台と、前記真空パッドを真空吸引する真空ポンプと、を備え、前記差動排気装置のヘッド部が前記被処理基板の面方向の外側へ移動したときに、前記吸い込み面が前記ヘッド部との間の空間の吸気を行い、大きな真空チャンバを必要とせず、被処理基板の周縁近傍での処理も可能にして、被処理基板における処理領域を大きくできる集束イオンビーム装置を提供すること。

公开(公告)号：WO2022026130A1

公开(公告)日：2022-02-03

申请号：PCT/US2021/040482

申请日：2021-07-06

Applicant: APPLIED MATERIALS, INC.

Inventor： STACY, Thomas ,  SCHEUER, Jay T. ,  HERMANSON, Eric D. ,  KOO, Bon-Woong ,  HSIEH, Tseh-Jen

IPC: H01J37/18 ,  H01J37/317

Abstract: A beamline ion implanter and a method of operating a beamline ion implanter. A method may include performing an ion implantation procedure during a first time period on a first set of substrates, in a process chamber of the ion implanter, and performing a first pressure-control routine during a second time period by: introducing a predetermined gas to reach a predetermined pressure into at least a downstream portion of the beam-line for a second time period. The method may include, after completion of the first pressure-control routine, performing the ion implantation procedure on a second set of substrates during a third time period.