Abstract:
A wakeup circuit operable in a low-power wireless device is provided. The wakeup circuit includes at least one radio frequency rectifier configured to output a rising transient voltage in response to existence of a RF signal received at an antenna of the wireless device; and a detector configured to output a wakeup signal when an input voltage level of the detector is higher than a reference voltage signal, wherein a signal output by the detector upon detection of a wakeup signal causes resetting each of the at least one rectifier upon detection of the wakeup signal; and wherein the wakeup circuit is coupled to an antenna interface of the wireless device.
Abstract:
A system and method for protecting against a voltage glitch are provided. Generally, the system includes a reset-detector coupled to a supply voltage (VCC) and to a power-on-reset (POR) block, and a glitch-detector coupled to VCC and the reset-detector. The reset-detector is operable to provide a signal to the POR block to generate a global- reset-signal when VCC decreases below a minimum and remains low for at least a first time. The glitch-detector is operable to provide a glitch-signal to the reset-detector to cause it to provide the signal to the POR block when VCC decreases below the minimum and remains low for at least a second time, where the second time is less than the first. The reset-detector can further include a retention-circuit operable to recall a glitch-signal was received and signal the POR block when VCC is restored. Other embodiments are also disclosed.
Abstract:
A power on reset circuit comprises terminals (101, 102) for reference and supply potentials (VSS, VDD) and a voltage divider (130) coupled therebetween. First and second transistors (110, 120) of a bandgap circuit are resistively coupled to the reference potential terminal (101) and have bases connected to the voltage divider (130). Current mirrors (150, 160, 170) couple the collectors of the first and second transistors (110, 120) to an output terminal (103) providing an output signal (POR) indicating a power on reset condition. A first compensation transistor (180) is coupled between the collector of one of the transistors (120) and the reference potential terminal (101), and a second compensation transistor (190) is coupled between the output terminal (103) and the reference potential terminal (101) to compensate the effect of parasitic substrate currents in response to an external interference.
Abstract:
A power-on-reset (POR) circuit (800) includes an NFET branch (302) and a PFET branch (306). The NFET branch (302) includes: an n-channel field effect transistor (NFET) (310, 312) having a first threshold voltage (Vthn); and a first quiescent bias current source (304) coupled between a supply terminal (VDD) and the NFET (310, 312). The PFET branch (306) includes: a p-channel field effect transistor (PFET) (316, 318) having a second threshold voltage (Vthp); and a second quiescent bias current source (308) coupled between a ground terminal and the PFET (316, 318). The POR circuit (800) is configured to provide a POR signal at an output terminal (816, 818, 820) based on: the first threshold voltage (Vthn) or the second threshold voltage (Vthp), whichever is larger; and a voltage margin (Vmargin). The output terminal (816) is coupled between the PFET branch (306) and the second quiescent bias current source (308).
Abstract:
In a circuit (100), an input stage (110) includes a first transistor device (114) configured to generate a first output signal (116) in response to a first bias current (118) activating the first transistor device (114) by exceeding a first threshold voltage of the first transistor device (114). A compensation stage (130) includes a second transistor device (134) coupled with a third transistor device (138). The second transistor device (134) is activated in response to the first output signal (116) exceeding a second threshold voltage of the second transistor device (134). The third transistor device (138) is activated in response to activation of the second transistor device (134) and a second bias current (140). The compensation stage (130) is configured to generate a second output signal (150) in response to the activation of the third transistor device (138). An output stage (160) is configured to generate a reset signal (164) in response to the second output signal (150) exceeding a third threshold voltage.
Abstract:
Die vorliegende Erfindung betrifft eine Schaltungsanordnung zum Schalten eines Hochvolt-MOSFETs (7) zur Vorladung einer Zwischenkreis-Kapazität eines Hochvolt-Bordnetzes mit einer ersten Schaltungsbaugruppe (11) mittels welcher die Schaltzeiten eines zum Laden der Zwischenkreiskapazitat verwendeten Hochvolt-MOSFETs verringert werden können.