The invention discloses a multi-chamber gallium arsenide single crystal growth furnace and method and relates to gallium arsenide polycrystals, in particular to a multi-chamber gallium arsenide single crystal growth furnace and method which are used for controlling growth of gallium arsenide single crystals through induction vortexes of a magnetic field and improving the growth efficiency of the gallium arsenide single crystals. According to the growth method, the multi-chamber gallium arsenide single crystal growth furnace is used for synthesizing and comprises four independent furnace chambers and longitudinal magnetic field devices matched with the furnace chambers, the furnace chambers are embedded in the longitudinal magnetic field devices, the longitudinal magnetic field devices of the four furnace chambers are connected integrally through a wire, in the growth process of the gallium arsenide polycrystals, the induction vortexes are generated through the magnetic field devices, and the growth of the single crystals is controlled through the induction vortexes. According to the multi-chamber gallium arsenide single crystal growth furnace and method, synchronous single crystal growth of the furnace chambers is achieved, the growth efficiency of the single crystals is improved, newly-grown crystals inherit the perfect structure of seed crystals, and the quality of the crystals is improved.