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CN110783320A 金属-绝缘体-金属电容器结构 无效 - 撤回

金属-绝缘体-金属电容器结构
摘要：
一种金属-绝缘体-金属电容器结构包含半导体基板和位于半导体基板上方的底部导电层，底部导电层相对于半导体基板的顶表面具有倾斜侧壁。金属-绝缘体-金属电容器结构还包括位于底部导电层上方的顶部导电层，顶部导电层相对于半导体基板的顶表面具有垂直侧壁。金属-绝缘体-金属电容器结构还包括介于底部导电层和顶部导电层之间的绝缘层，绝缘层覆盖底部导电层的倾斜侧壁。
摘要（英）：

A metal-insulator-metal (MIM) capacitor structure includes a semiconductor substrate and a bottom conductive layer above the semiconductor substrate. The bottom conductive layer has a slanted sidewallwith respect to a top surface of the semiconductor substrate. The MIM capacitor structure further includes a top conductive layer above the bottom conductive layer. The top conductive layer has a vertical sidewall with respect to the top surface of the semiconductor substrate. The MIM capacitor structure further includes an insulating layer interposed between the bottom conductive layer and the top conductive layer. The insulating layer covers the slanted sidewall of the bottom conductive layer.

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