发明公开
EP0819780A3 Inductively coupled HDP-CVD reactor
失效
Induktiv gekoppelter Reaktor zum CVD mit Plasma hoher Dichte
- 专利标题： Inductively coupled HDP-CVD reactor
- 专利标题（中）： Induktiv gekoppelter Reaktor zum CVD mit Plasma hoher Dichte
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申请号： EP97305257.4申请日： 1997-07-15
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公开(公告)号： EP0819780A3公开(公告)日： 1998-05-27
- 发明人: Redeker, Fred C. , Farhad, Moghadam , Hanawa, Hiroji , Ishikawa, Tetsuya , Maydan, Dan , Li, Shijian , Lue, Brian , Steger, Robert , Wang, Yaxim , Wong, Manus , Sinha, Ashok , Nowak, Fred Romuald , Niazi, Kaveh , Smyth, Kenneth , Staryuik, Pavel , Krishhanaraj, Padmanabham , Murugesh, Laxman , Rossman, Kent
- 申请人： Applied Materials, Inc.
- 申请人地址： 3050 Bowers Avenue Santa Clara, CA 95054 US
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： 3050 Bowers Avenue Santa Clara, CA 95054 US
- 代理机构： Bayliss, Geoffrey Cyril
- 优先权： US679927 19960715
- 主分类号： C23C16/50
- IPC分类号： C23C16/50 ; H01J37/32
摘要：
The disclosure relates to an HDP-CVD tool (10) using simultaneous deposition and sputtering of doped and undoped silicon dioxide capable of excellent gap fill and blanket film deposition on wafers. The tool of the present invention includes: two separately powered RF coils (72,74) providing a dual RF zone inductively coupled plasma source; a dual zone gas distribution system; temperature controlled surfaces within the tool; a symmetrically shaped turbomolecular pumped chamber body (12); a dual cooling zone electrostatic chuck; an all ceramic/aluminum alloy chamber; and a remote plasma chamber cleaning system.
公开/授权文献
- EP0819780B1 Inductively coupled HDP-CVD reactor 公开/授权日：2004-02-18
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