- 专利标题： Semiconductor device having metal gate with nitrogen rich portion and titanium rich portion
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申请号： US14840041申请日： 2015-08-30
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公开(公告)号： US10008581B2公开(公告)日： 2018-06-26
- 发明人: Chun-Tsen Lu , Chien-Ming Lai , Lu-Sheng Chou , Ya-Huei Tsai , Ching-Hsiang Chiu , Yu-Tung Hsiao , Chen-Ming Huang , Kun-Ju Li , Yu-Ping Wang
- 申请人： UNITED MICROELECTRONICS CORP.
- 申请人地址： TW Hsin-Chu
- 专利权人： UNITED MICROELECTRONICS CORP.
- 当前专利权人： UNITED MICROELECTRONICS CORP.
- 当前专利权人地址： TW Hsin-Chu
- 代理商 Winston Hsu
- 优先权： CN201510467637 20150803
- 主分类号： H01L23/48
- IPC分类号： H01L23/48 ; H01L23/52 ; H01L29/40 ; H01L29/66 ; H01L29/423 ; H01L29/49 ; C22C32/00 ; H01L29/51 ; H01L21/28 ; B32B1/00
摘要：
A semiconductor device is disclosed. The semiconductor device includes a substrate and a gate structure on the substrate. The gate structure includes a high-k dielectric layer on the substrate and a bottom barrier metal (BBM) layer on the high-k dielectric layer. Preferably, the BBM layer includes a top portion, a middle portion, and a bottom portion, in which the top portion being a nitrogen rich portion, and the middle portion and the bottom portion being titanium rich portions.
公开/授权文献
- US20170040435A1 SEMICONDUCTOR DEVICE WITH METAL GATE 公开/授权日：2017-02-09
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