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    Semiconductor device and method of forming the same
    4.
    发明授权
    Semiconductor device and method of forming the same 有权
    半导体器件及其形成方法

    公开(公告)号：US09524967B1

    公开(公告)日：2016-12-20

    申请号：US15046458

    申请日：2016-02-18

    Applicant: UNITED MICROELECTRONICS CORP.

    Inventor： Hao-Yeh Liu ,  Chien-Ming Lai ,  Yu-Ping Wang ,  Mon-Sen Lin ,  Ya-Huei Tsai ,  Ching-Hsiang Chiu

    IPC: H01L27/088 ,  H01L27/092 ,  H01L21/8234

    CPC classification number: H01L27/088 ,  H01L21/82345 ,  H01L21/823842 ,  H01L27/092

    Abstract: A semiconductor device and a method of forming the same, the semiconductor device include a substrate, and a first transistor, a second transistor and a third transistor all disposed on the substrate. The first transistor includes a first channel, and a first barrier layer and a first work function layer stacked with each other on the first channel. The second transistor includes a second channel, and a second barrier layer and a second work function layer stacked with each other. The third transistor includes a third channel and a third barrier layer and a third work function layer stacked with each other on the third channel, wherein the first barrier layer, the second barrier layer and the third barrier layer have different nitrogen ratio. The first, the second and the third transistors have different threshold voltages, respectively.

    Abstract translation: 半导体器件及其形成方法，所述半导体器件包括基板，以及全部设置在所述基板上的第一晶体管，第二晶体管和第三晶体管。 第一晶体管包括第一通道，以及在第一通道上彼此堆叠的第一势垒层和第一功函数层。 第二晶体管包括第二通道，以及彼此堆叠的第二阻挡层和第二功能层。 第三晶体管包括在第三沟道上彼此堆叠的第三沟道和第三势垒层和第三功函数层，其中第一势垒层，第二阻挡层和第三势垒层具有不同的氮比。 第一，第二和第三晶体管分别具有不同的阈值电压。

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