- 专利标题: Semiconductor device including volatile and non-volatile memory
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申请号: US15520932申请日: 2015-10-23
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公开(公告)号: US10049712B2公开(公告)日: 2018-08-14
- 发明人: Takashi Yokoyama , Shunsaku Tokito , Hiroshi Hasegawa , Hajime Yamagishi
- 申请人: Sony Corporation
- 申请人地址: JP Tokyo
- 专利权人: Sony Corporation
- 当前专利权人: Sony Corporation
- 当前专利权人地址: JP Tokyo
- 代理机构: Michael Best & Friedrich LLP
- 优先权: JP2014-235309 20141120
- 国际申请: PCT/JP2015/079945 WO 20151023
- 国际公布: WO2016/080146 WO 20160526
- 主分类号: G11C14/00
- IPC分类号: G11C14/00 ; G11C11/16 ; H01L27/22 ; H01L43/12 ; H01L43/08 ; H01L43/02
摘要:
A semiconductor device includes a flip-flop circuit, a control line, a first P-type transistor and a first non-volatile storage element, and a second P-type transistor and a second non-volatile storage element. The flip-flop circuit has a circular structure in which a first inverter circuit, a first connection line including a first node, a second inverter circuit, and a second connection line including a second node are coupled in order. The first P-type transistor and the first non-volatile storage element are coupled together in series between the first node and the control line. The second P-type transistor and the second non-volatile storage element are coupled together in series between the second node and the control line. The non-volatile storage element is a magnetic tunnel junction element including a pinned layer, a tunnel barrier layer, and a free layer arranged in order from a position close to the control line.
公开/授权文献
- US20180025765A1 SEMICONDUCTOR DEVICE 公开/授权日:2018-01-25