Invention Grant
- Patent Title: Light-erasable embedded memory device and method of manufacturing the same
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Application No.: US15638352Application Date: 2017-06-29
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Publication No.: US10079204B2Publication Date: 2018-09-18
- Inventor: Hao Su , Chow Yee Lim , Chao Jiang , Hong Liao
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/522 ; H01L27/11521 ; H01L29/51 ; H01L21/28 ; H01L21/268 ; H01L23/528 ; G11C16/04
Abstract:
A light-erasable embedded memory device and a method for manufacturing the same are provided in the present invention. The light-erasable embedded memory device includes a substrate with a memory region and a core circuit region, a floating gate on the memory region of the substrate, at least two light-absorbing films above the floating gate, wherein each light-absorbing film is provided with at least one dummy via hole overlapping the floating gate, and a dielectric layer on each light-absorbing film and filling up the dummy via holes.
Public/Granted literature
- US20170316830A1 LIGHT-ERASABLE EMBEDDED MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2017-11-02
Information query
IPC分类:
