- 专利标题： Replacement metal gate and fabrication process with reduced lithography steps
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申请号： US14452606申请日： 2014-08-06
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公开(公告)号： US10176996B2公开(公告)日： 2019-01-08
- 发明人: Min Gyu Sung , Chanro Park , Hoon Kim
- 申请人： GLOBALFOUNDRIES Inc.
- 申请人地址： KY Grand Cayman
- 专利权人： GLOBALFOUNDRIES INC.
- 当前专利权人： GLOBALFOUNDRIES INC.
- 当前专利权人地址： KY Grand Cayman
- 代理机构： Williams Morgan, P.C.
- 主分类号： H01L21/8234
- IPC分类号： H01L21/8234 ; H01L21/8238 ; H01L29/66 ; H01L29/49 ; H01L27/092 ; H01L21/28 ; H01L21/3213 ; H01L29/51
摘要：
Embodiments of the present invention provide a replacement metal gate and a fabrication process with reduced lithography steps. Using selective etching techniques, a layer of fill metal is used to protect the dielectric layer in the trenches, eliminating the need for some lithography steps. This, in turn, reduces the overall cost and complexity of fabrication. Furthermore, additional protection is provided during etching, which serves to improve product yield.
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