Invention Grant
- Patent Title: Mask pattern forming method, fine pattern forming method, and film deposition apparatus
-
Application No.: US15440406Application Date: 2017-02-23
-
Publication No.: US10191378B2Publication Date: 2019-01-29
- Inventor: Kazuhide Hasebe , Shigeru Nakajima , Jun Ogawa , Hiroki Murakami
- Applicant: TOKYO ELECTRON LIMITED
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: IPUSA, PLLC
- Priority: JP2008-251679 20080929; JP2009-206443 20090907
- Main IPC: G03F7/40
- IPC: G03F7/40 ; C23C16/02 ; C23C16/40 ; C23C16/455 ; H01L21/02 ; H01L21/033 ; H01L21/311 ; H01L21/316 ; H01L21/3213 ; H01L21/768 ; H01L21/027
Abstract:
In a mask pattern forming method, a resist film is formed over a thin film, the resist film is processed into resist patterns having a predetermined pitch by photolithography, slimming of the resist patterns is performed, and an oxide film is formed on the thin film and the resist patterns after an end of the slimming step in a film deposition apparatus by supplying a source gas and an oxygen radical or an oxygen-containing gas. In the mask pattern forming method, the slimming and the oxide film forming are continuously performed in the film deposition apparatus.
Public/Granted literature
- US20170162381A1 MASK PATTERN FORMING METHOD, FINE PATTERN FORMING METHOD, AND FILM DEPOSITION APPARATUS Public/Granted day:2017-06-08
Information query
IPC分类:
