公开(公告)号：US09422624B2

公开(公告)日：2016-08-23

申请号：US14603405

申请日：2015-01-23

Applicant: TOKYO ELECTRON LIMITED

Inventor： Shigeru Nakajima ,  Hiromi Shima ,  Yusuke Tachino

IPC: C23C16/448 ,  C23C16/44 ,  C23C16/455

CPC classification number: C23C16/4402 ,  C23C16/45546 ,  C23C16/45572 ,  C23C16/45578

Abstract: The present disclosure provides a heat treatment method, in which a substrate supporter supporting a plurality of substrates in the configuration of a shelf thereon is loaded in a vertical reaction tube surrounded by a heating mechanism and a heat treatment is performed. The method includes discharging a processing gas from a gas nozzle provided in the reaction tube to extend in a vertical direction of the substrate supporter, and supplying a temperature adjusting fluid into a flow path forming member provided to surround the gas nozzle in the reaction tube and adjusting a temperature of the processing gas in the gas nozzle.

Abstract translation: 本公开提供一种热处理方法，其中将支撑其上的搁板结构的多个基板的基板支撑件装载在由加热机构包围的垂直反应管中并进行热处理。 该方法包括从设置在反应管中的气体喷嘴排出处理气体，以在基板支撑件的垂直方向上延伸，并将温度调节流体供应到设置成围绕反应管中的气体喷嘴的流路形成部件，以及 调节气体喷嘴中的处理气体的温度。

公开(公告)号：US08815714B2

公开(公告)日：2014-08-26

申请号：US13780842

申请日：2013-02-28

Applicant: Tokyo Electron Limited

Inventor： Akinobu Kakimoto ,  Shigeru Nakajima ,  Kazuhide Hasebe

IPC: H01L21/02

CPC classification number: H01L21/67017 ,  H01L21/0245 ,  H01L21/02488 ,  H01L21/02502 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02636

Abstract: A method of forming a germanium thin film on an underlying film includes forming a germanium seed layer by absorbing a germanium on a surface of the underlying film using an aminogermane-based gas, and forming a germanium thin film on the germanium seed layer using a germane-based gas.

Abstract translation: 在下面的膜上形成锗薄膜的方法包括通过使用氨基锗烷类气体在基底膜的表面上吸收锗来形成锗种子层，并且在锗种子层上使用​​锗烷形成锗薄膜 的气体。

公开(公告)号：US10191378B2

公开(公告)日：2019-01-29

申请号：US15440406

申请日：2017-02-23

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kazuhide Hasebe ,  Shigeru Nakajima ,  Jun Ogawa ,  Hiroki Murakami

IPC: G03F7/40 ,  C23C16/02 ,  C23C16/40 ,  C23C16/455 ,  H01L21/02 ,  H01L21/033 ,  H01L21/311 ,  H01L21/316 ,  H01L21/3213 ,  H01L21/768 ,  H01L21/027

Abstract: In a mask pattern forming method, a resist film is formed over a thin film, the resist film is processed into resist patterns having a predetermined pitch by photolithography, slimming of the resist patterns is performed, and an oxide film is formed on the thin film and the resist patterns after an end of the slimming step in a film deposition apparatus by supplying a source gas and an oxygen radical or an oxygen-containing gas. In the mask pattern forming method, the slimming and the oxide film forming are continuously performed in the film deposition apparatus.

公开(公告)号：US10141187B2

公开(公告)日：2018-11-27

申请号：US15714052

申请日：2017-09-25

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kazuhide Hasebe ,  Shigeru Nakajima ,  Jun Ogawa ,  Hiroki Murakami

IPC: H01L21/027 ,  C23C16/02 ,  C23C16/40 ,  C23C16/455 ,  G03F7/40 ,  H01L21/02 ,  H01L21/033 ,  H01L21/311 ,  H01L21/316 ,  H01L21/3213 ,  H01L21/768

Abstract: In a mask pattern forming method, a resist film is formed over a thin film, the resist film is processed into resist patterns having a predetermined pitch by photolithography, slimming of the resist patterns is performed, and an oxide film is formed on the thin film and the resist patterns after an end of the slimming step in a film deposition apparatus by supplying a source gas and an oxygen radical or an oxygen-containing gas. In the mask pattern forming method, the slimming and the oxide film forming are continuously performed in the film deposition apparatus.

公开(公告)号：US11881379B2

公开(公告)日：2024-01-23

申请号：US17808375

申请日：2022-06-23

Applicant: Tokyo Electron Limited

Inventor： Kazuhide Hasebe ,  Shigeru Nakajima ,  Jun Ogawa ,  Hiroki Murakami

IPC: H01J37/32 ,  C23C16/02 ,  C23C16/40 ,  C23C16/455 ,  H01L21/02 ,  H01L21/033 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/768 ,  H01L21/316 ,  G03F7/40 ,  H01L21/027

CPC classification number: H01J37/32091 ,  C23C16/02 ,  C23C16/402 ,  C23C16/403 ,  C23C16/45536 ,  G03F7/40 ,  H01J37/3244 ,  H01J37/32834 ,  H01L21/027 ,  H01L21/0228 ,  H01L21/0274 ,  H01L21/02164 ,  H01L21/02178 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/31608 ,  H01L21/31616 ,  H01L21/32139 ,  H01L21/76816

Abstract: In a mask pattern forming method, a resist film is formed over a thin film, the resist film is processed into resist patterns having a predetermined pitch by photolithography, slimming of the resist patterns is performed, and an oxide film is formed on the thin film and the resist patterns after an end of the slimming step in a film deposition apparatus by supplying a source gas and an oxygen radical or an oxygen-containing gas. In the mask pattern forming method, the slimming and the oxide film forming are continuously performed in the film deposition apparatus.

公开(公告)号：US11486043B2

公开(公告)日：2022-11-01

申请号：US16526088

申请日：2019-07-30

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yoshihiro Takezawa ,  Shigeru Nakajima ,  Katsushige Harada ,  Yusuke Tachino

IPC: C23F4/02 ,  C23C8/80 ,  C23C8/06

Abstract: There is provided a metal contamination prevention method performed by passing a metal chloride gas through a metal component having a surface covered with an inactive film formed of a chromium oxide, the method including: generating a chromium chloride (III) hexahydrate by supplying a hydrochloric acid to the inactive film covering the surface of the metal component and allowing the chromium oxide to react with the hydrochloric acid; removing a chromium from the inactive film by evaporating the chromium chloride (III) hexahydrate; and covering a surface of the inactive film with a compound containing a metal contained in the metal chloride gas.

公开(公告)号：US10176992B2

公开(公告)日：2019-01-08

申请号：US13848849

申请日：2013-03-22

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kazuhide Hasebe ,  Shigeru Nakajima ,  Jun Ogawa ,  Hiroki Murakami

IPC: C23C16/455 ,  H01L21/3213 ,  H01L21/027 ,  H01L21/02 ,  H01L21/768 ,  H01L21/316 ,  H01L21/311 ,  C23C16/02 ,  G03F7/40 ,  C23C16/40 ,  H01L21/033

Abstract: In a mask pattern forming method, a resist film is formed over a thin film, the resist film is processed into resist patterns having a predetermined pitch by photolithography, slimming of the resist patterns is performed, and an oxide film is formed on the thin film and the resist patterns after an end of the slimming step in a film deposition apparatus by supplying a source gas and an oxygen radical or an oxygen-containing gas. In the mask pattern forming method, the slimming and the oxide film forming are continuously performed in the film deposition apparatus.

公开(公告)号：US09777366B2

公开(公告)日：2017-10-03

申请号：US14730530

申请日：2015-06-04

Applicant: TOKYO ELECTRON LIMITED

Inventor： Akinobu Kakimoto ,  Atsushi Endo ,  Takahiro Miyahara ,  Shigeru Nakajima ,  Satoshi Takagi ,  Kazumasa Igarashi

IPC: H01L21/479 ,  C23C16/24 ,  C30B25/02 ,  C30B29/06 ,  C23C16/02 ,  C23C16/04 ,  C23C16/455 ,  H01L21/02 ,  H01L21/67

CPC classification number: C23C16/24 ,  C23C16/0272 ,  C23C16/045 ,  C23C16/45523 ,  C30B25/02 ,  C30B29/06 ,  H01L21/02167 ,  H01L21/02271 ,  H01L21/02312 ,  H01L21/67109

Abstract: A thin film forming method which forms a seed film and an impurity-containing silicon film on a surface of an object to be processed in a processing container configured to be vacuum exhaustible, the thin film forming method includes: performing a first step which forms the seed film formed of a compound of silicon, carbon and nitrogen on the surface of the object by supplying a seed film raw material gas comprising an aminosilane-based gas into the processing container; and performing a second step which forms the impurity-containing silicon film in an amorphous state on the seed film by supplying a silane-based gas and an impurity-containing gas into the processing container.

公开(公告)号：US09758867B2

公开(公告)日：2017-09-12

申请号：US14227754

申请日：2014-03-27

Applicant: TOKYO ELECTRON LIMITED

Inventor： Shigeru Nakajima ,  Hiromi Shima ,  Yusuke Tachino

IPC: C23C16/448 ,  C23C16/44 ,  C23C16/52

CPC classification number: C23C16/4481 ,  C23C16/4401 ,  C23C16/4408 ,  C23C16/52

Abstract: Provided is a method of controlling a gas supply apparatus including a vaporizer, a carrier gas supply source and a gas supply line, the method including: supplying a liquid or sold raw material to a raw material container included in a vaporizer; vaporizing the liquid or sold raw material in the raw material container to produce a raw material gas; exhausting an interior of the raw material container having the liquid or sold raw material; supplying a carrier gas from the carrier gas supply source to the raw material container; and flowing the raw material gas and the carrier gas from the raw material container to a processing chamber in which a substrate to be processed is accommodated via the gas supply line.

公开(公告)号：US09145604B2

公开(公告)日：2015-09-29

申请号：US13628268

申请日：2012-09-27

Applicant: TOKYO ELECTRON LIMITED

Inventor： Akinobu Kakimoto ,  Atsushi Endo ,  Takahiro Miyahara ,  Shigeru Nakajima ,  Satoshi Takagi ,  Kazumasa Igarashi

IPC: H01L21/336 ,  C23C16/24 ,  C30B25/02 ,  C30B29/06 ,  C23C16/02 ,  C23C16/04 ,  C23C16/455 ,  H01L21/67

CPC classification number: C23C16/24 ,  C23C16/0272 ,  C23C16/045 ,  C23C16/45523 ,  C30B25/02 ,  C30B29/06 ,  H01L21/02167 ,  H01L21/02271 ,  H01L21/02312 ,  H01L21/67109

Abstract: A thin film forming method which forms a seed film and an impurity-containing silicon film on a surface of an object to be processed in a processing container configured to be vacuum exhaustible includes: performing a first step which forms the seed film by supplying a seed film raw material gas including at least any one of an aminosilane-based gas and a higher silane into the processing container; and performing a second step which forms the impurity-containing silicon film in an amorphous state by supplying a silane-based gas and an impurity-containing gas into the processing container.

Abstract translation: 在被配置为真空可消耗的处理容器中的待处理物体的表面上形成种子膜和含杂质的硅膜的薄膜形成方法包括：通过提供种子进行形成种子膜的第一步骤 将包含氨基硅烷类气体和高级硅烷中的至少任一种的膜原料气体加入到处理容器内; 以及通过向所述处理容器供给硅烷系气体和含杂质气体，进行非晶态的含杂质的硅膜的第二工序。