Invention Grant
- Patent Title: Pure boron for silicide contact
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Application No.: US15629910Application Date: 2017-06-22
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Publication No.: US10229982B2Publication Date: 2019-03-12
- Inventor: Chia-Yu Chen , Zuoguang Liu , Sanjay C. Mehta , Tenko Yamashita
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Agent Vazken Alexanian
- Main IPC: H01L29/45
- IPC: H01L29/45 ; H01L29/08 ; H01L29/16 ; H01L29/40 ; H01L29/41 ; H01L29/49 ; H01L29/51 ; H01L29/66 ; H01L29/78 ; H01L23/48 ; H01L21/768 ; H01L21/225 ; H01L29/417 ; H01L21/8238 ; H01L21/3065 ; H01L21/311 ; H01L29/167 ; H01L21/285 ; H01L23/485
Abstract:
A semiconductor device includes a gate disposed over a substrate; a source region and a drain region on opposing sides of the gate; and a pair of trench contacts over and abutting an interfacial layer portion of at least one of the source region and the drain region; wherein the interfacial layer includes boron in an amount in a range from about 5×1021 to about 5×1022 atoms/cm2.
Public/Granted literature
- US20170288035A1 PURE BORON FOR SILICIDE CONTACT Public/Granted day:2017-10-05
Information query
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