公开(公告)号：US20230122695A1

公开(公告)日：2023-04-20

申请号：US18067632

申请日：2022-12-16

申请人： Applied Materials, Inc.

发明人： Dmitry Lubomirsky ,  Xiao Ming He ,  Jennifer Y. Sun ,  Xiaowei Wu ,  Laksheswar Kalita ,  Soonam Park

IPC分类号： H01J37/32 ,  C23C16/458 ,  C23C16/46

摘要： A ground shield of a processing chamber includes a ceramic body including a ground shield plate, a raised edge extending from an upper surface of the ground shield plate, and a hollow shaft that extends from a lower surface of the ground shield plate. An electrically conductive layer is formed on and conforms to at least the upper surface of the ground shield plate and an interior surface of the hollow shaft. A first protective layer is formed on at least the electrically conductive layer. A heater plate of a heater first within the raised edge and on the ground shield plate such that the heater plate is disposed on top of the first protective layer, the electrically conductive layer, and the upper surface of the ground shield plate.

公开(公告)号：US11515195B2

公开(公告)日：2022-11-29

申请号：US17080560

申请日：2020-10-26

申请人： Applied Materials, Inc.

发明人： Laksheswar Kalita

IPC分类号： H01L21/687 ,  H01L21/67 ,  H01J7/32 ,  H01J37/305 ,  H01J37/32 ,  H01L21/3065 ,  C23C16/44

摘要： Exemplary semiconductor processing chambers may include a chamber body. The chambers may include a showerhead. The chambers may include a substrate support. The substrate support may include a platen characterized by a first surface facing the showerhead. The substrate support may include a shaft coupled with the platen along a second surface of the platen opposite the first surface of the platen. The shaft may extend at least partially through the chamber body. A coating may extend conformally about the first surface of the platen, the second surface of the platen, and about the shaft.

公开(公告)号：US20190323127A1

公开(公告)日：2019-10-24

申请号：US15957076

申请日：2018-04-19

申请人： Applied Materials, Inc.

发明人： Laksheswar Kalita ,  Soonam Park ,  Dmitry Lubomirsky

IPC分类号： C23C18/18 ,  C23C18/32 ,  C23C18/16 ,  B32B15/01 ,  C25F3/04

摘要： Systems and methods may be used to produce coated components. Exemplary chamber components may include an aluminum plate defining a plurality of apertures. The plate may include a nickel coating on a textured aluminum plate to provide for adhesion. Implementing the present technology, the nickel coating may be firmly affixed with or without first applying an intermediate adhesion layer. Deleterious components from the intermediate adhesion layer (if present) may not contaminate substrates as readily as a consequence of the texturing of the aluminum plate. The contamination from the intermediate adhesion layer is undesirable and may electrically compromise semiconductor devices during processing.

公开(公告)号：US11591693B2

公开(公告)日：2023-02-28

申请号：US17176411

申请日：2021-02-16

申请人： Applied Materials, Inc.

发明人： Laksheswar Kalita ,  Soonam Park ,  Dmitry Lubomirsky ,  Tien Fak Tan ,  LokKee Loh ,  Saravjeet Singh ,  Tae Won Kim

IPC分类号： H01J37/32 ,  C23C16/455 ,  C23C16/34 ,  H01L21/3213 ,  H01L21/285 ,  C23C16/458

摘要： Exemplary semiconductor processing chamber showerheads may include a dielectric plate characterized by a first surface and a second surface opposite the first surface. The dielectric plate may define a plurality of apertures through the dielectric plate. The dielectric plate may define a first annular channel in the first surface of the dielectric plate, and the first annular channel may extend about the plurality of apertures. The dielectric plate may define a second annular channel in the first surface of the dielectric plate. The second annular channel may be formed radially outward from the first annular channel. The showerheads may also include a conductive material embedded within the dielectric plate and extending about the plurality of apertures without being exposed by the apertures. The conductive material may be exposed at the second annular channel.

公开(公告)号：US20210082665A1

公开(公告)日：2021-03-18

申请号：US17017495

申请日：2020-09-10

申请人： Applied Materials, Inc.

发明人： Greg Toland ,  Kenneth D. Schatz ,  Laksheswar Kalita ,  Dmitry Lubomirsky

IPC分类号： H01J37/32 ,  H01L21/67

摘要： Exemplary semiconductor processing systems may include a pedestal configured to support a semiconductor substrate. The pedestal may be operable as a first plasma-generating electrode. The systems may include a lid plate defining a radial volume. The systems may include a faceplate supported with the lid plate. The faceplate may be operable as a second plasma-generating electrode. A plasma processing region may be defined between the pedestal and the faceplate within the radial volume defined by the faceplate. The faceplate may define a plurality of first apertures. The systems may include a showerhead positioned between the faceplate and the pedestal. The showerhead may define a plurality of second apertures comprising a greater number of apertures than the plurality of first apertures.

公开(公告)号：US20190304756A1

公开(公告)日：2019-10-03

申请号：US16374420

申请日：2019-04-03

申请人： Applied Materials, Inc.

发明人： Laksheswar Kalita ,  Soonam Park ,  Toan Q. Tran ,  Lili Ji ,  Dmitry Lubomirsky ,  Akhil Devarakonda ,  Tien Fak Tan ,  Tae Won Kim ,  Saravjeet Singh ,  Alexander Tam ,  Jingchun Zhang ,  Jing J. Zhang

IPC分类号： H01J37/32 ,  C23C4/134 ,  C23C4/11

摘要： Systems and methods may be used to produce coated components. Exemplary chamber components may include an aluminum, stainless steel, or nickel plate defining a plurality of apertures. The plate may include a hybrid coating, and the hybrid coating may include a first layer comprising a corrosion resistant coating. The first layer may extend conformally through each aperture of the plurality of apertures. The hybrid coating may also include a second layer comprising an erosion resistant coating extending across a plasma-facing surface of the semiconductor chamber component.

公开(公告)号：US11557464B2

公开(公告)日：2023-01-17

申请号：US16891803

申请日：2020-06-03

申请人： Applied Materials, Inc.

发明人： Laksheswar Kalita ,  Son Nguyen ,  Dmitry Lubomirsky ,  Kenneth D. Schatz

IPC分类号： H01L21/67 ,  H01L21/3065 ,  H01J37/32 ,  C23C16/40

摘要： Systems and methods may be used to produce coated components. Exemplary semiconductor chamber components may include an aluminum alloy comprising nickel and may be characterized by a surface. The surface may include a corrosion resistant coating. The corrosion resistant coating may include a conformal layer and a non-metal layer. The conformal layer may extend about the semiconductor chamber component. The non-metal oxide layer may extend over a surface of the conformal layer. The non-metal oxide layer may be characterized by an amorphous microstructure having a hardness of from about 300 HV to about 10,000 HV. The non-metal oxide layer may also be characterized by an sp2 to sp3 hybridization ratio of from about 0.01 to about 0.5 and a hydrogen content of from about 1 wt. % to about 35 wt. %.

公开(公告)号：US20220130688A1

公开(公告)日：2022-04-28

申请号：US17080560

申请日：2020-10-26

申请人： Applied Materials, Inc.

发明人： Laksheswar Kalita

IPC分类号： H01L21/67 ,  H01J37/305 ,  H01L21/3065

摘要： Exemplary semiconductor processing chambers may include a chamber body. The chambers may include a showerhead. The chambers may include a substrate support. The substrate support may include a platen characterized by a first surface facing the showerhead. The substrate support may include a shaft coupled with the platen along a second surface of the platen opposite the first surface of the platen. The shaft may extend at least partially through the chamber body. A coating may extend conformally about the first surface of the platen, the second surface of the platen, and about the shaft.

公开(公告)号：US20200224313A1

公开(公告)日：2020-07-16

申请号：US16245698

申请日：2019-01-11

申请人： Applied Materials, Inc.

发明人： Laksheswar Kalita ,  Soonam Park ,  Dmitry Lubomirsky ,  Tien Fak Tan ,  LokKee Loh ,  Saravjeet Singh ,  Tae Won Kim

IPC分类号： C23C16/455 ,  C23C16/34 ,  C23C16/458 ,  H01J37/32 ,  H01L21/285 ,  H01L21/3213

摘要： Exemplary semiconductor processing chamber showerheads may include a dielectric plate characterized by a first surface and a second surface opposite the first surface. The dielectric plate may define a plurality of apertures through the dielectric plate. The dielectric plate may define a first annular channel in the first surface of the dielectric plate, and the first annular channel may extend about the plurality of apertures. The dielectric plate may define a second annular channel in the first surface of the dielectric plate. The second annular channel may be formed radially outward from the first annular channel. The showerheads may also include a conductive material embedded within the dielectric plate and extending about the plurality of apertures without being exposed by the apertures. The conductive material may be exposed at the second annular channel.

公开(公告)号：US10407789B2

公开(公告)日：2019-09-10

申请号：US15835067

申请日：2017-12-07

申请人： Applied Materials, Inc.

发明人： Balaji Ganapathy ,  Ankur Kadam ,  Prerna S. Goradia ,  Laksheswar Kalita ,  Tapash Chakraborty ,  Vijay Bhan Sharma

IPC分类号： C25D3/44 ,  C25D5/44 ,  C25D5/48 ,  C25D5/18 ,  C25D7/00 ,  C25D5/50 ,  C25D9/08 ,  C25D11/04 ,  C25D5/02

摘要： In one implementation, a method of depositing a material on a substrate is provided. The method comprises positioning an aluminum-containing substrate in an electroplating solution, the electroplating solution comprising a non-aqueous solvent and a deposition precursor. The method further comprises depositing a coating on the aluminum-containing substrate, the coating comprising aluminum or aluminum oxide. Depositing the coating comprises applying a first current for a first time-period to nucleate a surface of the aluminum-containing substrate and applying a second current for a second time-period, wherein the first current is greater than the second current and the first time-period is less than the second time-period to form the coating on the nucleated surface of the aluminum-containing substrate.