公开(公告)号：US11976357B2

公开(公告)日：2024-05-07

申请号：US16698549

申请日：2019-11-27

Applicant: Applied Materials, Inc.

Inventor： Geetika Bajaj ,  Yogita Pareek ,  Prerna Sonthalia Goradia ,  Ankur Kadam

IPC: C23C16/455 ,  C23C16/02 ,  C23C16/40 ,  C23C16/44 ,  H01J37/32

CPC classification number: C23C16/45536 ,  C23C16/0272 ,  C23C16/40 ,  C23C16/4404 ,  C23C16/45553 ,  H01J37/32467 ,  H01J37/32495

Abstract: Embodiments of the disclosure provide methods for fabricating or otherwise forming a protective coating containing cerium oxide on processing chamber surfaces and/or components, such as surfaces which are exposed to a plasma within a processing chamber. In one or more embodiments, a method of forming a protective coating within a processing chamber includes depositing a cerium oxide layer on a chamber surface or a chamber component during an atomic layer deposition (ALD) process. The ALD process includes sequentially exposing the chamber surface or the chamber component to a cerium precursor, a purge gas, an oxidizing agent, and the purge gas during an ALD cycle, and repeating the ALD cycle to deposit the cerium oxide layer.

公开(公告)号：US11489105B2

公开(公告)日：2022-11-01

申请号：US16691569

申请日：2019-11-21

Applicant: Applied Materials, Inc

Inventor： Abhijeet Laxman Sangle ,  Vijay Bhan Sharma ,  Ankur Kadam ,  Bharatwaj Ramakrishnan ,  Visweswaren Sivaramakrishnan ,  Yuan Xue

IPC: C23C14/35 ,  H01L41/319 ,  H01L41/047 ,  H01L41/08 ,  H01L41/316 ,  C23C14/06 ,  C23C14/54 ,  H01L41/187

Abstract: A method of fabricating a piezoelectric layer includes depositing a piezoelectric material onto a substrate in a first crystallographic phase by physical vapor deposition while the substrate remains at a temperature below 400° C., and thermally annealing the substrate at a temperature above 500° C. to convert the piezoelectric material to a second crystallographic phase. The physical vapor deposition includes sputtering from a target in a plasma deposition chamber.

公开(公告)号：US20210143319A1

公开(公告)日：2021-05-13

申请号：US16691569

申请日：2019-11-21

Applicant: Applied Materials, Inc.

Inventor： Abhijeet Laxman Sangle ,  Vijay Bhan Sharma ,  Ankur Kadam ,  Bharatwaj Ramakrishnan ,  Visweswaren Sivaramakrishnan ,  Yuan Xue

IPC: H01L41/319 ,  H01L41/047 ,  H01L41/08 ,  H01L41/187 ,  H01L41/316 ,  C23C14/06 ,  C23C14/54 ,  C23C14/35

Abstract: A method of fabricating a piezoelectric layer includes depositing a piezoelectric material onto a substrate in a first crystallographic phase by physical vapor deposition while the substrate remains at a temperature below 400° C., and thermally annealing the substrate at a temperature above 500° C. to convert the piezoelectric material to a second crystallographic phase. The physical vapor deposition includes sputtering from a target in a plasma deposition chamber.

公开(公告)号：US20190338418A1

公开(公告)日：2019-11-07

申请号：US16401467

申请日：2019-05-02

Applicant: Applied Materials, Inc.

Inventor： Prerna Goradia ,  Jennifer Y. Sun ,  Xiaowei Wu ,  Geetika Bajaj ,  Atul Chaudhari ,  Ankur Kadam

IPC: C23C16/44 ,  C23C16/18 ,  C23C16/27 ,  H01J37/32 ,  C23C16/455

Abstract: Described herein are articles, systems and methods where a halogen resistant coating is deposited onto a surface of a chamber component using an atomic layer deposition (ALD) process. The halogen resistant coating has an optional amorphous seed layer and a transition metal-containing layer. The halogen resistant coating uniformly covers features of the chamber component, such as those having an aspect ratio of about 3:1 to about 300:1.

公开(公告)号：US20240145230A1

公开(公告)日：2024-05-02

申请号：US17976573

申请日：2022-10-28

Applicant: Applied Materials, Inc.

Inventor： Abhishek Mandal ,  Nitin Deepak ,  Geetika Bajaj ,  Ankur Kadam ,  Gopi Chandran Ramachandran ,  Suraj Rengarajan ,  Farhad K. Moghadam ,  Deenesh Padhi ,  Srinivas M. Satya ,  Manish Hemkar ,  Vijay Tripathi ,  Darshan Thakare

IPC: H01L21/02

CPC classification number: H01L21/0206 ,  H01L21/02123 ,  H01L21/02208 ,  H01L21/0226

Abstract: Exemplary semiconductor processing methods may include providing one or more deposition precursors to a semiconductor processing chamber. A substrate may be disposed within a processing region of the semiconductor processing chamber. The methods may include depositing a silicon-containing material on the substrate and on one or more components of the semiconductor processing chamber. The methods may include providing a fluorine-containing precursor to the processing region. The fluorine-containing precursor may be plasma-free when provided to the processing region. The methods may include contacting the silicon-containing material on the one or more components of the semiconductor processing chamber with the fluorine-containing precursor. The methods may include removing at least a portion of the silicon-containing material on the one or more components of the semiconductor processing chamber with the fluorine-containing precursor.

公开(公告)号：US20230279541A1

公开(公告)日：2023-09-07

申请号：US18122472

申请日：2023-03-16

Applicant: Applied Materials, Inc.

Inventor： Prerna Goradia ,  Jennifer Y. Sun ,  Xiaowei Wu ,  Geetika Bajaj ,  Atul Chaudhari ,  Ankur Kadam

IPC: C23C16/44 ,  C23C16/18 ,  C23C16/455 ,  H01J37/32 ,  C23C16/27 ,  C23C16/40

CPC classification number: C23C16/4404 ,  C23C16/18 ,  C23C16/45529 ,  H01J37/32477 ,  C23C16/277 ,  C23C16/45544 ,  C23C16/405

Abstract: Described herein are articles, systems and methods where a halogen resistant coating is deposited onto a surface of a chamber component using an atomic layer deposition (ALD) process. The halogen resistant coating has an optional amorphous seed layer and a transition metal-containing layer. The halogen resistant coating uniformly covers features of the chamber component, such as those having an aspect ratio of about 3:1 to about 300:1.

公开(公告)号：US11739429B2

公开(公告)日：2023-08-29

申请号：US17339411

申请日：2021-06-04

Applicant: Applied Materials, Inc.

Inventor： Abhishek Mandal ,  Nitin Deepak ,  Neha Gupta ,  Prerna Sonthalia Goradia ,  Ankur Kadam ,  Kenichi Ohno ,  David Alexander Britz ,  Lance A. Scudder

IPC: C23C16/40 ,  C23G1/10 ,  C23C16/02 ,  C23C16/34 ,  B64F5/40 ,  C11D7/32 ,  C11D7/06 ,  C11D7/08 ,  C11D11/00

CPC classification number: C23G1/10 ,  B64F5/40 ,  C11D7/06 ,  C11D7/08 ,  C11D7/3245 ,  C11D11/0023 ,  C23C16/0227 ,  C23C16/34 ,  C23C16/40

Abstract: Methods for refurbishing aerospace components by removing corrosion and depositing protective coatings are provided herein. In one or more embodiments, a method of refurbishing an aerospace component includes exposing the aerospace component containing corrosion to an aqueous cleaning solution. The aerospace component contains a nickel superalloy, an aluminide layer disposed on the nickel superalloy, and an aluminum oxide layer disposed on the aluminide layer. The method includes removing the corrosion from a portion of the aluminum oxide layer with the aqueous cleaning solution to reveal the aluminum oxide layer, then exposing the aluminum oxide layer to a post-rinse, and forming a protective coating on the aluminum oxide layer.

公开(公告)号：US11639547B2

公开(公告)日：2023-05-02

申请号：US16401467

申请日：2019-05-02

Applicant: Applied Materials, Inc.

Inventor： Prerna Goradia ,  Jennifer Y. Sun ,  Xiaowei Wu ,  Geetika Bajaj ,  Atul Chaudhari ,  Ankur Kadam

IPC: C23C16/44 ,  C23C16/455 ,  H01J37/32 ,  C23C16/18 ,  C23C16/27 ,  C23C16/40

Abstract: Described herein are articles, systems and methods where a halogen resistant coating is deposited onto a surface of a chamber component using an atomic layer deposition (ALD) process. The halogen resistant coating has an optional amorphous seed layer and a transition metal-containing layer. The halogen resistant coating uniformly covers features of the chamber component, such as those having an aspect ratio of about 3:1 to about 300:1.

公开(公告)号：US10407789B2

公开(公告)日：2019-09-10

申请号：US15835067

申请日：2017-12-07

Applicant: Applied Materials, Inc.

Inventor： Balaji Ganapathy ,  Ankur Kadam ,  Prerna S. Goradia ,  Laksheswar Kalita ,  Tapash Chakraborty ,  Vijay Bhan Sharma

IPC: C25D3/44 ,  C25D5/44 ,  C25D5/48 ,  C25D5/18 ,  C25D7/00 ,  C25D5/50 ,  C25D9/08 ,  C25D11/04 ,  C25D5/02

Abstract: In one implementation, a method of depositing a material on a substrate is provided. The method comprises positioning an aluminum-containing substrate in an electroplating solution, the electroplating solution comprising a non-aqueous solvent and a deposition precursor. The method further comprises depositing a coating on the aluminum-containing substrate, the coating comprising aluminum or aluminum oxide. Depositing the coating comprises applying a first current for a first time-period to nucleate a surface of the aluminum-containing substrate and applying a second current for a second time-period, wherein the first current is greater than the second current and the first time-period is less than the second time-period to form the coating on the nucleated surface of the aluminum-containing substrate.

公开(公告)号：US20150275375A1

公开(公告)日：2015-10-01

申请号：US14486105

申请日：2014-09-15

Applicant: Applied Materials, Inc.

Inventor： SUNG JE KIM ,  Laksheswar Kalita ,  Yogita Pareek ,  Ankur Kadam ,  Prerna Sonthalia Goradia ,  Bipin Thakur ,  Dmitry Lubomirsky

IPC: C23C22/66 ,  C23C22/56

CPC classification number: C23C22/66 ,  C23C14/22 ,  C23C16/45525 ,  C23C16/45527 ,  C23C16/50 ,  C23C22/56 ,  C23F1/16 ,  C23F1/20 ,  C23F1/32 ,  C23F1/36 ,  H01J37/32009 ,  H01J37/3244 ,  H01J37/32532 ,  H01J37/3255 ,  H01L21/67069 ,  H01L21/67248 ,  H01L21/67253 ,  H01L21/67306 ,  Y10T428/24322 ,  Y10T428/24355

Abstract: A process for generating a compact alumina passivation layer on an aluminum component includes rinsing the component in deionized water for at least one minute, drying it for at least one minute, and exposing it to concentrated nitric acid, at a temperature below 10° C., for one to 30 minutes. The process also includes rinsing the component in deionized water for at least one minute, drying it for at least one minute, and exposing it to NH4OH for one second to one minute. The process further includes rinsing the component in deionized water for at least one minute and drying it for at least one minute. A component for use in a plasma processing system includes an aluminum component coated with an AlxOy film having a thickness of 4 to 8 nm and a surface roughness less than 0.05 μm greater than a surface roughness of the component without the AlxOy film.

Abstract translation: 在铝组分上产生紧密的氧化铝钝化层的方法包括在去离子水中冲洗组分至少1分钟，将其干燥至少1分钟，并在低于10℃的温度下将其暴露于浓硝酸。 一到30分钟。 该方法还包括将去离子水中的组分冲洗至少1分钟，将其干燥至少1分钟，并将其暴露于NH 4 OH 1秒至1分钟。 该方法还包括将组分在去离子水中冲洗至少1分钟并将其干燥至少一分钟。 用于等离子体处理系统的部件包括涂覆有厚度为4至8nm的Al x O y膜的铝部件和比没有Al x O y膜的部件的表面粗糙度大于0.05μm的表面粗糙度。