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公开(公告)号:US11489105B2
公开(公告)日:2022-11-01
申请号:US16691569
申请日:2019-11-21
发明人: Abhijeet Laxman Sangle , Vijay Bhan Sharma , Ankur Kadam , Bharatwaj Ramakrishnan , Visweswaren Sivaramakrishnan , Yuan Xue
IPC分类号: C23C14/35 , H01L41/319 , H01L41/047 , H01L41/08 , H01L41/316 , C23C14/06 , C23C14/54 , H01L41/187
摘要: A method of fabricating a piezoelectric layer includes depositing a piezoelectric material onto a substrate in a first crystallographic phase by physical vapor deposition while the substrate remains at a temperature below 400° C., and thermally annealing the substrate at a temperature above 500° C. to convert the piezoelectric material to a second crystallographic phase. The physical vapor deposition includes sputtering from a target in a plasma deposition chamber.
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公开(公告)号:US20210143319A1
公开(公告)日:2021-05-13
申请号:US16691569
申请日:2019-11-21
发明人: Abhijeet Laxman Sangle , Vijay Bhan Sharma , Ankur Kadam , Bharatwaj Ramakrishnan , Visweswaren Sivaramakrishnan , Yuan Xue
IPC分类号: H01L41/319 , H01L41/047 , H01L41/08 , H01L41/187 , H01L41/316 , C23C14/06 , C23C14/54 , C23C14/35
摘要: A method of fabricating a piezoelectric layer includes depositing a piezoelectric material onto a substrate in a first crystallographic phase by physical vapor deposition while the substrate remains at a temperature below 400° C., and thermally annealing the substrate at a temperature above 500° C. to convert the piezoelectric material to a second crystallographic phase. The physical vapor deposition includes sputtering from a target in a plasma deposition chamber.
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公开(公告)号:US20190338418A1
公开(公告)日:2019-11-07
申请号:US16401467
申请日:2019-05-02
发明人: Prerna Goradia , Jennifer Y. Sun , Xiaowei Wu , Geetika Bajaj , Atul Chaudhari , Ankur Kadam
IPC分类号: C23C16/44 , C23C16/18 , C23C16/27 , H01J37/32 , C23C16/455
摘要: Described herein are articles, systems and methods where a halogen resistant coating is deposited onto a surface of a chamber component using an atomic layer deposition (ALD) process. The halogen resistant coating has an optional amorphous seed layer and a transition metal-containing layer. The halogen resistant coating uniformly covers features of the chamber component, such as those having an aspect ratio of about 3:1 to about 300:1.
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公开(公告)号:US20230032638A1
公开(公告)日:2023-02-02
申请号:US17967556
申请日:2022-10-17
发明人: Abhijeet Laxman Sangle , Vijay Bhan Sharma , Ankur Kadam , Bharatwaj Ramakrishnan , Visweswaren Sivaramakrishnan , Yuan Xue
IPC分类号: H01L41/319 , C23C14/54 , C23C14/06 , H01L41/08 , C23C14/35 , H01L41/187 , H01L41/047 , H01L41/316
摘要: A physical vapor deposition system includes a deposition chamber, a support to hold a substrate in the deposition chamber, a target in the chamber, a power supply configured to apply power to the target to generate a plasma in the chamber to sputter material from the target onto the substrate to form a piezoelectric layer on the substrate, and a controller configured to cause the power supply to alternate between deposition phases in which the power supply applies power to the target and cooling phases in which power supply does not apply power to the target. Each deposition phase lasts at least 30 seconds and each cooling phase lasts at least 30 seconds.
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公开(公告)号:US20210143320A1
公开(公告)日:2021-05-13
申请号:US16691570
申请日:2019-11-21
发明人: Abhijeet Laxman Sangle , Vijay Bhan Sharma , Yuan Xue , Uday Pai , Bharatwaj Ramakrishnan , Ankur Kadam
IPC分类号: H01L41/319 , H01L41/047 , H01L41/08 , H01L41/187 , H01L41/29 , H01L41/316
摘要: A piezoelectric device includes a substrate, a thermal oxide layer on the substrate, a metal or metal oxide adhesion layer on the thermal oxide layer, a lower electrode on the metal oxide adhesion layer, a seed layer on the lower electrode, a lead magnesium niobate-lead titanate (PMNPT) piezoelectric layer on the seed layer, and an upper electrode on the PMNPT piezoelectric layer.
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公开(公告)号:US10253406B2
公开(公告)日:2019-04-09
申请号:US15451995
申请日:2017-03-07
发明人: Laksheswar Kalita , Prerna S. Goradia , Geetika Bajaj , Yogita Pareek , Yixing Lin , Dmitry Lubomirsky , Ankur Kadam , Bipin Thakur , Kevin A. Papke , Kaushik Vaidya
IPC分类号: C25D3/54 , C25D5/18 , C25D5/48 , C25D11/34 , C23C8/12 , C22F1/16 , C23C8/16 , C25D5/50 , C25D11/08
摘要: The present disclosure generally relates to methods of electro-chemically forming yttria or yttrium oxide. The methods may include the optional preparation of a an electrochemical bath, the electrodepositon of yttria or yttrium oxide onto a substrate, removal of solvent form the surface of the substrate, and post treatment of the substrate having the electrodeposited yttria or yttrium oxide thereon.
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公开(公告)号:US10233554B2
公开(公告)日:2019-03-19
申请号:US15452062
申请日:2017-03-07
发明人: Yogita Pareek , Laksheswar Kalita , Geetika Bajaj , Kevin A. Papke , Ankur Kadam , Bipin Thakur , Yixing Lin , Dmitry Lubomirsky , Prerna S. Goradia
摘要: The present disclosure generally relates to methods of electro-chemically forming aluminum or aluminum oxide. The methods may include the optional preparation of a an electrochemical bath, the electrodepositon of aluminum or aluminum oxide onto a substrate, removal of solvent form the surface of the substrate, and post treatment of the substrate having the electrodeposited aluminum or aluminum oxide thereon.
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公开(公告)号:US09903020B2
公开(公告)日:2018-02-27
申请号:US14486105
申请日:2014-09-15
发明人: Sung Je Kim , Laksheswar Kalita , Yogita Pareek , Ankur Kadam , Prerna Sonthalia Goradia , Bipin Thakur , Dmitry Lubomirsky
IPC分类号: C23C22/48 , C23C22/56 , C23C22/66 , C23C14/22 , C23C16/455 , C23C16/50 , H01J37/32 , H01L21/67 , H01L21/673 , C23F1/32 , C23F1/36 , C23F1/16 , C23F1/20
CPC分类号: C23C22/66 , C23C14/22 , C23C16/45525 , C23C16/45527 , C23C16/50 , C23C22/56 , C23F1/16 , C23F1/20 , C23F1/32 , C23F1/36 , H01J37/32009 , H01J37/3244 , H01J37/32532 , H01J37/3255 , H01L21/67069 , H01L21/67248 , H01L21/67253 , H01L21/67306 , Y10T428/24322 , Y10T428/24355
摘要: A process for generating a compact alumina passivation layer on an aluminum component includes rinsing the component in deionized water for at least one minute, drying it for at least one minute, and exposing it to concentrated nitric acid, at a temperature below 10° C., for one to 30 minutes. The process also includes rinsing the component in deionized water for at least one minute, drying it for at least one minute, and exposing it to NH4OH for one second to one minute. The process further includes rinsing the component in deionized water for at least one minute and drying it for at least one minute. A component for use in a plasma processing system includes an aluminum component coated with an AlxOy film having a thickness of 4 to 8 nm and a surface roughness less than 0.05 μm greater than a surface roughness of the component without the AlxOy film.
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公开(公告)号:US11639547B2
公开(公告)日:2023-05-02
申请号:US16401467
申请日:2019-05-02
发明人: Prerna Goradia , Jennifer Y. Sun , Xiaowei Wu , Geetika Bajaj , Atul Chaudhari , Ankur Kadam
摘要: Described herein are articles, systems and methods where a halogen resistant coating is deposited onto a surface of a chamber component using an atomic layer deposition (ALD) process. The halogen resistant coating has an optional amorphous seed layer and a transition metal-containing layer. The halogen resistant coating uniformly covers features of the chamber component, such as those having an aspect ratio of about 3:1 to about 300:1.
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公开(公告)号:US10407789B2
公开(公告)日:2019-09-10
申请号:US15835067
申请日:2017-12-07
发明人: Balaji Ganapathy , Ankur Kadam , Prerna S. Goradia , Laksheswar Kalita , Tapash Chakraborty , Vijay Bhan Sharma
IPC分类号: C25D3/44 , C25D5/44 , C25D5/48 , C25D5/18 , C25D7/00 , C25D5/50 , C25D9/08 , C25D11/04 , C25D5/02
摘要: In one implementation, a method of depositing a material on a substrate is provided. The method comprises positioning an aluminum-containing substrate in an electroplating solution, the electroplating solution comprising a non-aqueous solvent and a deposition precursor. The method further comprises depositing a coating on the aluminum-containing substrate, the coating comprising aluminum or aluminum oxide. Depositing the coating comprises applying a first current for a first time-period to nucleate a surface of the aluminum-containing substrate and applying a second current for a second time-period, wherein the first current is greater than the second current and the first time-period is less than the second time-period to form the coating on the nucleated surface of the aluminum-containing substrate.
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